Topic
Transistor
About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.
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TL;DR: In this paper, the effect of the solution-gate potential on the electronic properties of graphene is explained using a model that considers the microscopic structure of water at the graphene/electrolyte interface.
Abstract: Graphene, with its unique combination of physical and electronic properties, holds great promise for biosensor and bioelectronic applications. In this respect, the development of graphene solution-gated field-effect transistor (SGFET) arrays capable of operation in aqueous environments will establish the real potential of graphene in this rapidly emerging field. Here, we report on a facile route for the scalable fabrication of such graphene transistor arrays and provide a comprehensive characterization of their operation in aqueous electrolytes. An on-chip structure for Hall-effect measurements allows the direct determination of charge carrier concentrations and mobilities under electrolyte gate control. The effect of the solution-gate potential on the electronic properties of graphene is explained using a model that considers the microscopic structure of water at the graphene/electrolyte interface. The graphene SGFETs exhibit a high transconductance and correspondingly high sensitivity, together with an effective gate noise as low as tens of μV. Our study demonstrates that graphene SGFETs, with their facile technology, high transconductance, and low noise promise to far outperform state-of-the-art Si-based devices for biosensor and bioelectronic applications.
157 citations
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02 Aug 1995TL;DR: In this article, all six transistors of an SRAM cell can be formed in a single crystal material for improved device characteristics and increased cell density, which can be seen as an example of vertical integration within semiconductor devices.
Abstract: An integrated circuit (10) has a vertical device, such as a transistor (71), formed by epitaxial growth from a substrate (12) and a horizontal device, such as a transistor (73, 75) grown epitaxially from the vertical device. In accordance with one embodiment of the invention, all six transistors of an SRAM cell can be formed in single crystal material for improved device characteristics and increased cell density. Utilization of various combinations of vertical and horizontal devices permits a large degree of vertical integration within semiconductor devices.
157 citations
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TL;DR: An improved poly-hexylthiophene (P3HT) polymer field effect transistor with field effect mobility of 0.05-0.1 cm2/Vs and ON-OFF current ratio of 106-108 is demonstrated in this article.
157 citations
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TL;DR: The pristine rr-P3ATs are known to form into a nanofi brillar morphology promoted by the pi-stacked polymer backbone and lamellar packing of the alkyl side chain, which is postulated that this morphology is the reason for its high charge mobility.
Abstract: Plastic electronics based on organic semiconductors attract considerable attention due to the promise of low cost, lightweight, and fl exible large area electronic devices such as organic fi eld effect transistors (OFETs), [ 1 ] organic photovoltaics (OPVs), [ 2 ] electrochromic devices, [ 3 ] and organic light emitting diodes (OLEDs). [ 4 ] Of the semiconductors, regioregular poly(3alkylthiophenes) rr-P3ATs are the most studied and researched material. [ 5 ] This is predominately due to the development of Grignard Metathesis (GRIM) that provides the facile synthesis of structurally pure rr-P3AT with narrow polydisperities. [ 6 ] The pristine rr-P3ATs are known to form into a nanofi brillar morphology promoted by the pi-stacked polymer backbone and lamellar packing of the alkyl side chain. It is postulated that this morphology is the reason for its high charge mobility ( ∼ 0.1 cm 2 /Vs). [ 7 ] The nanofi brillar structures act as a charge transport pathway where holes can hop from one polymer chain to another down the nanofi bril. Unfortunately, these nanofi brillar structures have some major vulnerabilities that can be detrimental to charge transport such as large interfi brillar grain boundaries that trap charges and variable morphologies that are diffi cult to reproduce, both resulting in reduced charge mobilities. [ 8 ]
157 citations
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23 Nov 2009TL;DR: In this paper, a field effect transistor (FET) with a round-shaped nano-wire channel and a method of manufacturing the FET is presented. But the method is limited to the case of single-input single-output (SIMO) devices.
Abstract: A field-effect transistor (FET) with a round-shaped nano-wire channel and a method of manufacturing the FET are provided. According to the method, source and drain regions are formed on a semiconductor substrate. A plurality of preliminary channel regions is coupled between the source and drain regions. The preliminary channel regions are etched, and the etched preliminary channel regions are annealed to form FET channel regions, the FET channel regions having a substantially circular cross-sectional shape.
157 citations