Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

CMOS-based carbon nanotube pass-transistor logic integrated circuits.

Abstract: Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration.

Nonvolatile semiconductor memory and process of producing the same

Abstract: A nonvolatile semiconductor memory of an aspect of the present invention comprises a semiconductor substrate, a pillar-shaped semiconductor layer extending in the vertical direction with respect to the surface of the semiconductor substrate, a plurality of memory cells arranged in the vertical direction on the side surface of the semiconductor layer and having a charge storage layer and a control gate electrode, a first select gate transistor arranged on the semiconductor layer at an end of the memory cells on the side of the semiconductor substrate, and a second select gate transistor arranged on the semiconductor layer on the other end of the memory cells opposite to the side of the semiconductor substrate, wherein the first select gate transistor includes a diffusion layer in the semiconductor substrate and is electrically connected to the pillar-shaped semiconductor layer by way of the diffusion layer that serves as the drain region.

Display device, and method of driving the same

Abstract: PROBLEM TO BE SOLVED: To perform refresh of an image by refreshing an image signal at about 1 Hz frame frequency, without the occurrence of a flicker to adversely affect the display in an image display device of a memory built-in pixel system of a single-channel transistor configuration SOLUTION: A reference voltage line 108 is scanned synchronously with scanning of a scanning signal line 109; the voltage of the reference voltage line is set to be the voltage of a common electrode 120; the second transistor is set to off state during the reference voltage line is set in the common voltage for a pixel, wherein a node 125 between an image signal memory 124 and the second transistor is set in a voltage so that the second transistor becomes off, and the voltage of the image signal line is set to be high voltage level, when the voltage of the scanning signal line changes from a low voltage level to a high voltage level for the pixel, wherein the node between the image signal memory; and the second transistor is set in a voltage so that the second transistor becomes on In this pixel, the voltage of the scanning line 110 is set to be at a high level, when at least the voltage of the scanning line switches from a high level to a low level The display device, having the printed matter and ultra-high fineness display performance by a single transistor configuration and the low power consumption performance by low-frequency driving, can be realized COPYRIGHT: (C)2008,JPO&INPIT

MoS2 transistors operating at gigahertz frequencies.

Abstract: The presence of a direct band gap 1−4 and an ultrathin form factor 5 has caused a considerable interest in two-dimensional (2D) semiconductors from the transition metal dichalcogenides (TMD) family with molybdenum disulfide (MoS2) being the most studied representative of this family of materials. While diverse electronic elements, 6,7 logic circuits, 8,9 and optoelectronic devices 12,13 have been demonstrated using ultrathin MoS2, very little is known about their performance at high frequencies where commercial devices are expected to function. Here, we report on top-gated MoS2 transistors operating in the gigahertz range of frequencies. Our devices show cutoff frequencies reaching 6 GHz. The presence of a band gap also gives rise to current saturation, 10 allowing power and voltage gain, all in the gigahertz range. This shows that MoS2 could be an interesting material for realizing high-speed amplifiers and logic circuits with device scaling expected to result in further improvement of performance. Our work represents the first step in the realization of high-frequency analog and digital circuits based on 2D semiconductors.