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Transistor
About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.
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TL;DR: A new type of electrometer is described that uses a single-electron transistor (SET) and that allows large operating speeds and extremely high charge sensitivity, and in some ways is the electrostatic "dual" of the well-known radio-frequency superconducting quantum interference device.
Abstract: A new type of electrometer is described that uses a single-electron transistor (SET) and that allows large operating speeds and extremely high charge sensitivity. The SET readout was accomplished by measuring the damping of a 1.7-gigahertz resonant circuit in which the device is embedded, and in some ways is the electrostatic “dual” of the well-known radio-frequency superconducting quantum interference device. The device is more than two orders of magnitude faster than previous single-electron devices, with a constant gain from dc to greater than 100 megahertz. For a still-unoptimized device, a charge sensitivity of 1.2 × 10 −5 e / hertz was obtained at a frequency of 1.1 megahertz, which is about an order of magnitude better than a typical, 1/ f -noise-limited SET, and corresponds to an energy sensitivity (in joules per hertz) of about 41 ℏ.
769 citations
Book•
01 Jan 1977
TL;DR: In this paper, the authors present a list of symbols for metal-oxide-silicon systems, including Mos Field-effect transistors, high-field effects, and high-frequency effects.
Abstract: Semiconductor Electronics. Silicon Technology. Metal--Semiconductor Contacts. pn Junctions. Currents in pn Junctions. Bipolar Transistors I: Basic Properties. Bipolar Transistors II: Limitations and Models. Properties of the Metal--Oxide--Silicon System. Mos Field--Effect Transistors I: Physical Effects and Models. Mos Field--Effect Transistors II: High--Field Effects. Answers to Selected Problems. Selected List of Symbols. Index.
766 citations
Book•
15 Dec 2000
TL;DR: In this article, the authors present a detailed discussion of the application of Bipolar Transistors in a CMOS process and their application in a variety of applications, including the following: 1. Semiconductors.
Abstract: (NOTE: Each chapter concludes with "Summary" and "Exercises.") 1. Device Physics. Semiconductors. Generation and Recombination. Extrinsic Semiconductors. Diffusion and Drift. PN Junctions. Depletion Regions. PH Diodes. Schottky Diodes. Zener Diodes. Ohmic Contacts. Bipolar Junction Transistors. Beta. I-V Characteristics. MOS Transistors. Threshold Voltage. I-V Characteristics. JFET Transistors. 2. Semiconductor Fabrication. Silicon Manufacture. Crystal Growth. Wafer Manufacturing. The Crystal Structure of Silicon. Photolithography. Photoresists. Photomasks and Reticles. Patterning. Oxide Growth and Removal. Oxide Growth and Deposition. Oxide Removal. Other Effects of Oxide Growth and Removal. Local Oxidation of Silicon (LOCOS). Diffusion and Ion Implantation. Diffusion. Other Effects of Diffusion. Ion Implantation. Silicon Deposition. Epitaxy. Polysilicon Deposition. Metallization. Deposition and Removal of Aluminum. Refractory Barrier Metal. Silicidation. Interlevel Oxide, Interlevel Nitride, and Protective Overcoat. Assembly. Mount and Bond. Packaging. 3. Representative Processes. Standard Bipolar. Essential Features. Fabrication Sequence. Available Devices. Process Extensions. Polysilicon-Gate CMOS. Essential Features. Fabrication Sequence. Available Devices. Process Extensions. Analog BiCMOS. Essential Features. Fabrication Sequence. Available Devices. Process Extensions. 4. Failure Mechanisms. Electrical Overstress. Electrostatic Discharge (ESD). Electromigration. The Antenna Effect. Contamination. Dry Corrosion. Mobile Ion Contamination. Surface Effects. Hot Carrier Injection. Parasitic Channels and Charge Spreading. Parasitics. Substrate Debiasing. Minority-Carrier Injection. 5. Resistors. Resistivity and Sheet Resistance. Resistor Layout. Resistor Variability. Process Variation. Temperature Variation. Nonlinearity. Contact Resistance. Resistor Parasitics. Comparison of Available Resistors. Base Resistors. Emitter Resistors. Base Pinch Resistors. High-Sheet Resistors. Epi Pinch Resistors. Metal Resistors. Poly Resistors. NSD and PSD Resistors. N-Well Resistors. Thin-Film Resistors. Adjusting Resistor Values. Tweaking Resistors. Trimming Resistors. 6. Capacitors. Capacitance. Capacitor Variability. Process Variation. Voltage Modulation and Temperature Variation. Capacitor Parasitics. Comparison of Available Capacitors. Base-Emitter Junction Capacitors. MOS Capacitors. Poly-Poly Capacitors. Miscellaneous Styles of Capacitors. 7. Matching of Resistors and Capacitors. Measuring Mismatch. Causes of Mismatch. Random Statistical Fluctuations. Process Biases. Pattern Shift. Variations in Polysilicon Etch Rate. Diffusion Interactions. Stress Gradients and Package Shifts. Temperature Gradients and Thermoelectrics. Electrostatic Interactions. Rules for Device Matching. Rules for Resistor Matching. Rules for Capacitor Matching. 8. Bipolar Transistors. Topics in Bipolar Transistor Operation. Beta Rolloff. Avalanche Breakdown. Thermal Runaway and Secondary Breakdown. Saturation in NPN Transistors. Saturation in Lateral PNP Transistors. Parasitics of Bipolar Transistors. Standard Bipolar Small-Signal Transistors. The Standard Bipolar NPN Transistor. The Standard Bipolar Substrate PNP Transistor. The Standard Bipolar Lateral PNP Transistor. High-Voltage Bipolar Transistors. Alternative Small-Signal Bipolar Transistors. Extensions to Standard Bipolar. Bipolar Transistors in a CMOS Process. Advanced-Technology Bipolar Transistors. 9. Applications of Bipolar Transistors. Power Bipolar Transistors. Failure Mechanisms of NPN Power Transistors. Layout of Power NPN Transistors. Saturation Detection and Limiting. Matching Bipolar Transistors. Random Variations. Emitter Degeneration. NBL Shadow. Thermal Gradients. Stress Gradients. Rules for Bipolar Transistor Matching. Rules for Matching NPN Transistors. Rules for Matching Lateral PNP Transistors. 10. Diodes. Diodes in Standard Bipolar. Diode-Connected Transistors. Zener Diodes. Schottky Diodes. Diodes in CMOS and BiCMOS Processes. Matching Diodes. Matching PN Junction Diodes. Matching Zener Diodes. Matching Schottky Diodes. 11. MOS Transistors. Topics in MOS Transistor Operation. Modeling the MOS Transistor. Parasitics of MOS Transistors. Self-Aligned Poly-Gate CMOS Transistors. Coding the MOS Transistor. N-Well and P-Well Processes. Channel Stops. Threshold Adjust Implants. Scaling the Transistor. Variant Structures. Backgate Contacts. 12. Applications of MOS Transistors. Extended-Voltage Transistors. LDD and DDD Transistors. Extended-Drain Transistors. Multiple Gate Oxides. Power MOS Transistors. Conventional MOS Power Transistors. DMOS Transistors. The JFET Transistor. Modeling the JFET. JFET Layout. MOS Transistor Matching. Geometric Effects. Diffusion and Etch Effects. Thermal and Stress Effects. Common-Centroid Layout of MOS Transistors. Rules for MOS Transistor Matching. 13. Special Topics. Merged Devices. Flawed Device Mergers. Successful Device Mergers. Low-Risk Merged Devices. Medium-Risk Merged Devices. Devising New Merged Devices. Guard Rings. Standard Bipolar Electron Guard Rings. Standard Bipolar Hole Guard Rings. Guard Rings in CMOS and BiCMOS Designs. Single-Level Interconnection. Mock Layouts and Stick Diagrams. Techniques for Crossing Leads. Types of Tunnels. Constructing the Padring. Scribe Streets and Alignment Markers. Bondpads, Trimpads, and Testpads. ESD Structures. Selecting ESD Structures. 14. Assembling the Die. Die Planning. Cell Area Estimation. Die Area Estimation. Gross Profit Margin. Floorplanning. Top-Level Interconnection. Principles of Channel Routing. Special Routing Techniques. Electromigration. Minimizing Stress Effects. Appendix A: Table of Acronyms Used in the Text. Appendix B: The Miller Indices of a Cubic Crystal. Appendix C: Sample Layout Rules. Appendix D: Mathematical Derivations. Appendix E: Sources for Layout Editor Software. Index.
751 citations
TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.
Abstract: Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600?1700 V) SiC Schottky barrier diodes (SBDs) and power metal?oxide?semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.
750 citations
TL;DR: In this article, a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices is presented, covering single-crystal bulk and wafer production, homoepitaxial thin film growth by molecular beam epitaxy and halide vapor phase epitaxy.
Abstract: This is a review article on the current status and future prospects of the research and development on gallium oxide (Ga2O3) power devices. Ga2O3 possesses excellent material properties, in particular for power device applications. It is also attractive from an industrial viewpoint since large-size, high-quality wafers can be manufactured from a single-crystal bulk synthesized by melt–growth methods. These two features have drawn much attention to Ga2O3 as a new wide bandgap semiconductor following SiC and GaN. In this review, we describe the recent progress in the research and development on fundamental technologies of Ga2O3 devices, covering single-crystal bulk and wafer production, homoepitaxial thin film growth by molecular beam epitaxy and halide vapor phase epitaxy, as well as device processing and characterization of metal–semiconductor field-effect transistors, metal–oxide–semiconductor field-effect transistors and Schottky barrier diodes.
742 citations