Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

Observation of molecular orbital gating.

Abstract: The ultimate in electronic device miniaturization would be the creation of circuit elements consisting of an individual molecule. A single-molecule transistor exploiting the electrostatic modulation of a molecule's orbital energy is a theoretical possibility. Now Hyunwook Song and colleagues report the successful realization of such a device, a proof of concept that should enhance the practical prospects for molecularly engineered electronics. A longstanding aim in molecular-scale electronics is to create a true transistor analogue in which charge transport through a molecule is directly controlled by external modulation of the molecular orbitals. The observation of such a solid-state molecular device is now reported. The data demonstrate that true molecular transistors can be created, and clear the way for molecularly engineered electronic devices. The control of charge transport in an active electronic device depends intimately on the modulation of the internal charge density by an external node1. For example, a field-effect transistor relies on the gated electrostatic modulation of the channel charge produced by changing the relative position of the conduction and valence bands with respect to the electrodes. In molecular-scale devices2,3,4,5,6,7,8,9,10, a longstanding challenge has been to create a true three-terminal device that operates in this manner (that is, by modifying orbital energy). Here we report the observation of such a solid-state molecular device, in which transport current is directly modulated by an external gate voltage. Resonance-enhanced coupling to the nearest molecular orbital is revealed by electron tunnelling spectroscopy, demonstrating direct molecular orbital gating in an electronic device. Our findings demonstrate that true molecular transistors can be created, and so enhance the prospects for molecularly engineered electronic devices.

A functional MOS transistor featuring gate-level weighted sum and threshold operations

Abstract: A functional MOS transistor is proposed which works more intelligently than a mere switching device. The functional transistor calculates the weighted sum of all input signals at the gate level, and controls the 'on' and 'off' of the transistor based on the result of such a weighted sum operation. Since the function is quite analogous to that of biological neurons, the device is named a neuron MOSFET, or neuMOS (vMOS). The device is composed of a floating gate and multiples of input gates that capacitively interact with the floating gate. As the gate-level sum operation is performed in a voltage mode utilizing the capacitive coupling effect, essentially no power dissipation occurs in the calculation, making the device ideal for ULSI implementation. The basic characteristics of neuron MOSFETs as well as of simple circuit blocks are analyzed based on a simple transistor model and experiments. Making use of its very powerful function, a number of interesting circuit applications are explored. A soft hardware logic circuit implemented by neuMOS transistors is also proposed. >

Sub-10 nm carbon nanotube transistor.

Abstract: Although carbon nanotube (CNT) transistors have been promoted for years as a replacement for silicon technology, there is limited theoretical work and no experimental reports on how nanotubes will perform at sub-10 nm channel lengths. In this manuscript, we demonstrate the first sub-10 nm CNT transistor, which is shown to outperform the best competing silicon devices with more than four times the diameter-normalized current density (2.41 mA/μm) at a low operating voltage of 0.5 V. The nanotube transistor exhibits an impressively small inverse subthreshold slope of 94 mV/decade-nearly half of the value expected from a previous theoretical study. Numerical simulations show the critical role of the metal-CNT contacts in determining the performance of sub-10 nm channel length transistors, signifying the need for more accurate theoretical modeling of transport between the metal and nanotube. The superior low-voltage performance of the sub-10 nm CNT transistor proves the viability of nanotubes for consideration in future aggressively scaled transistor technologies.

Simple technique for separating the effects of interface traps and trapped‐oxide charge in metal‐oxide‐semiconductor transistors

Abstract: A new technique is presented for separating the threshold‐voltage shift of a metal‐oxide‐semiconductor transistor into shifts due to interface traps and trapped‐oxide charge. This technique is applied to threshold‐voltage shifts on an n‐channel transistor that result from ionizing radiation.

Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors

Abstract: An improved analysis of low frequency trapping noise in a MOS device is proposed. This analysis takes into account the supplementary fluctuations of the mobility induced by those of the interface charge. It enables an adequate description of the gate voltage dependence of the input equivalent gate voltage noise to be obtained in various actual situations. The outputs given by the Hooge mobility fluctuation model are also presented and discussed with respect to those obtained by the carrier number fluctuation model. In particular, the impact of the channel length or channel width, and the model type on the input gate voltage and drain current noise characteristics is studied and compared to typical experimental data. Finally, a procedure for the diagnosis of the low frequency noise sources in a MOS transistor is proposed.