Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

Metal oxide semiconductor device forming a pn junction with a thin film transistor of metal oxide semiconductor of copper suboxide and manufacture thereof

Abstract: PURPOSE: To obtain an excellent PN junction by doping controlled metal oxide semiconductor with impurities, by controlling defects by introducing hydrogen or the like in the defects due to the excessive oxygen in a part of metal oxide semiconductor of copper suboxide or the like, and controlling the carrier density and the conductivity type. CONSTITUTION: A metal oxide semiconductor 25 is metal semiconductor obtained by oxidizing metal films 24, 24'. An insulating protective film is formed on the surfaces of an insulating film 26 and the metal oxide semiconductor 25. By leading out electrodes connected with source drain electrodes 24, 24', a transistor having a gate electrode 22 is formed. The carrier density and the conductivity type are controlled by eliminating oxygen defects. The P-type conductivity or the N-type conductivity, and the resistivity can be controlled by impurity doping. In these cases, ion implantation method or the like can be applied. Thereby a thin film transistor of high mobility can be formed in a large area by low temperature treatment.

Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture

Abstract: A FinFET device is fabricated using conventional planar MOSFET technology. The device is fabricated in a silicon layer overlying an insulating layer (e.g., SIMOX) with the device extending from the insulating layer as a fin. Double gates are provided over the sides of the channel to provide enhanced drive current and effectively suppress short channel effects. A plurality of channels can be provided between a source and a drain for increased current capacity. In one embodiment two transistors can be stacked in a fin to provide a CMOS transistor pair having a shared gate.

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

Abstract: The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In(2)O(3) and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with approximately 82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.

Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator

Abstract: We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the organosilanes were applied to the SiO2 gate insulator from solution and form a self-assembled monolayer (SAM). The observed shifts of the transfer characteristics range from −2to50V and can be related to the surface potential of the layer next to the transistor channel. Concomitantly the mobile charge carrier concentration at zero gate bias reaches up to 4×1012∕cm2. In the single crystal FETs the measured transfer characteristics are also shifted, while essentially maintaining the high quality of the subthreshold swing. The shift of the transfer characteristics is governed by the built-in electric field of the SAM and can be explained using a simple energy level diagram. In the thin film devices, the subthreshold re...

High-performance carbon nanotube field-effect transistor with tunable polarities

Abstract: State-of-the-art carbon nanotube field-effect transistors (CNFETs) behave as Schottky-barrier-modulated transistors. It is known that vertical scaling of the gate oxide significantly improves the performance of these devices. However, decreasing the oxide thickness also results in pronounced ambipolar transistor characteristics and increased drain leakage currents. Using a novel device concept, we have fabricated high-performance enhancement-mode CNFETs exhibiting n- or p-type unipolar behavior, tunable by electrostatic and/or chemical doping, with excellent OFF-state performance and a steep subthreshold swing (S=63 mV/dec). The device design allows for aggressive oxide thickness and gate-length scaling while maintaining the desired device characteristics.