Topic
Transistor
About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.
Papers published on a yearly basis
Papers
More filters
••
01 Apr 1972TL;DR: In this paper, simple but reasonably accurate equations are derived which describe MOS transistor operation in the weak inversion region near turn-on, and these equations are used to find the transfer characteristics of complementary MOS inverters.
Abstract: Simple but reasonably accurate equations are derived which describe MOS transistor operation in the weak inversion region near turn-on. These equations are used to find the transfer characteristics of complementary MOS inverters. The smallest supply voltage at which these circuits will function is approximately 8kT/q. A boron ion implantation is used for adjusting MOST turn-on voltage for low-voltage circuits.
435 citations
••
TL;DR: This study reports a mechanism to electrically control second-order optical nonlinearities in monolayer WSe₂, an atomically thin semiconductor and paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.
Abstract: Second-order optical nonlinearities can be controlled, up to room temperature, by electrostatic gating in a field-effect transistor made from atomically thin crystals of WSe2. Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies1, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material and, so far, dynamical control of optical nonlinearities remains confined to research laboratories as a spectroscopic tool2. Here, we report a mechanism to electrically control second-order optical nonlinearities in monolayer WSe2, an atomically thin semiconductor. We show that the intensity of second-harmonic generation at the A-exciton resonance is tunable by over an order of magnitude at low temperature and nearly a factor of four at room temperature through electrostatic doping in a field-effect transistor. Such tunability arises from the strong exciton charging effects in monolayer semiconductors3,4, which allow for exceptional control over the oscillator strengths at the exciton and trion resonances. The exciton-enhanced second-harmonic generation is counter-circularly polarized to the excitation laser due to the combination of the two-photon and one-photon valley selection rules5,6,7,8, which have opposite helicity in the monolayer. Our study paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.
435 citations
••
TL;DR: The demonstration of a synaptic transistor with SmNiO₃, a correlated electron system with insulator-metal transition temperature at 130°C in bulk form, and synaptic spike-timing-dependent plasticity learning behaviour is realized.
Abstract: Inspired by biological neural systems, neuromorphic devices may open up new computing paradigms to explore cognition, learning and limits of parallel computation. Here we report the demonstration of a synaptic transistor with SmNiO₃, a correlated electron system with insulator-metal transition temperature at 130°C in bulk form. Non-volatile resistance and synaptic multilevel analogue states are demonstrated by control over composition in ionic liquid-gated devices on silicon platforms. The extent of the resistance modulation can be dramatically controlled by the film microstructure. By simulating the time difference between postneuron and preneuron spikes as the input parameter of a gate bias voltage pulse, synaptic spike-timing-dependent plasticity learning behaviour is realized. The extreme sensitivity of electrical properties to defects in correlated oxides may make them a particularly suitable class of materials to realize artificial biological circuits that can be operated at and above room temperature and seamlessly integrated into conventional electronic circuits.
432 citations
••
03 Nov 2009TL;DR: Experimental results show the existence of an optimum transistor size in accordance with the output loading conditions and the peak PCE increases with a decrease in operation frequency and with an increase in output load resistance.
Abstract: A high-efficiency CMOS rectifier circuit for UHF RFIDs was developed. The rectifier has a cross-coupled bridge configuration and is driven by a differential RF input. A differential-drive active gate bias mechanism simultaneously enables both low ON-resistance and small reverse leakage of diode-connected MOS transistors, resulting in large power conversion efficiency (PCE), especially under small RF input power conditions. A test circuit of the proposed differential-drive rectifier was fabricated with 0.18 mu m CMOS technology, and the measured performance was compared with those of other types of rectifiers. Dependence of the PCE on the input RF signal frequency, output loading conditions and transistor sizing was also evaluated. At the single-stage configuration, 67.5% of PCE was achieved under conditions of 953 MHz, - 12.5 dBm RF input and 10 KOmega output load. This is twice as large as that of the state-of-the-art rectifier circuit. The peak PCE increases with a decrease in operation frequency and with an increase in output load resistance. In addition, experimental results show the existence of an optimum transistor size in accordance with the output loading conditions. The multi-stage configuration for larger output DC voltage is also presented.
432 citations
••
TL;DR: In this paper, the complementary Si-based tunneling transistors are investigated in detail, and it is found that the band-to-band tunneling current is controlled by the gate-tosource voltage.
Abstract: The metal oxide semiconductor field effect transistor (MOSFET) is scaling to a “tunneling epoch”, in which multiple leakage current induced by different tunneling effects exist. The complementary Si-based tunneling transistors are presented in this paper. The working principle of this device is investigated in detail. It is found that the band-to-band tunneling current is be controlled by the gate-to-source voltage. Due to the reverse biased p-i-n diode structure, an ultra-low leakage current is achieved. The sub-threshold swing of TFET is not limited by kt/q, which is the physical limit of the MOSFET. Using the CMOS compatible processes, the complementary TFETs (CTFET) are fabricated on one wafer. From a circuit point of view, the compatibility between TFET and MOSFET enables the transfer of CMOS circuits to CTFET circuits.
428 citations