Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

Flexible Nanotube Electronics

Abstract: Nanotube network transistors have been transferred to polymer supports. The polymer-supported networks can be bent through at least 60° angles without changing their electronic properties. They ope...

Semiconducting Thienothiophene Copolymers: Design, Synthesis, Morphology, and Performance in Thin‐Film Organic Transistors

Abstract: Organic semiconductors are emerging as a viable alternative to amorphous silicon in a range of thin-film transistor devices. With the possibility to formulate these p-type materials as inks and subsequently print into patterned devices, organic-based transistors offer significant commercial advantages for manufacture, with initial applications such as low performance displays and simple logic being envisaged. Previous limitations of both air stability and electrical performance are now being overcome with a range of both small molecule and polymer-based solution-processable materials, which achieve charge carrier mobilities in excess of 0.5 cm 2 V -1 s -1 , a benchmark value for amorphous silicon semiconductors. Polymer semiconductors based on thienothiophene copolymers have achieved amongst the highest charge carrier mobilities in solution-processed transistor devices. In this Progress Report, we evaluate the advances and limitations of this class of polymer in transistor devices.

Methods of placing transistors in a circuit layout and semiconductor device with automatically placed transistors

Abstract: A method of automatically placing transistors of a folded transistor circuit for synthesizing rows of transistors in a semiconductor layout (172). First, an initial placement of transistors is generated (802). Next, a candidate move of transistors is selected (804). Then the change in cost of the placement resulting from applying the candidate move is evaluated (806). A decision is made to accept the candidate move based on the evaluation of its cost (808). If accepted, the move is performed (810) and the cost of the placement is updated (812). Finally, a decision to terminate the process is made (814).

Tunnel field-effect transistor without gate-drain overlap

Abstract: Tunnel field-effect transistors are promising successors of metal-oxide-semiconductor field-effect transistors because of the absence of short-channel effects and of a subthreshold-slope limit. However, the tunnel devices are ambipolar and, depending on device material properties, they may have low on-currents resulting in low switching speed. The authors have generalized the tunnel field-effect transistor configuration by allowing a shorter gate structure. The proposed device is especially attractive for vertical nanowire-based transistors. As illustrated with device simulations, the authors’ more flexible configuration allows of the reduction of ambipolar behavior, the increase of switching speed, and the decrease of processing complexity.

Plasma wave electronics: novel terahertz devices using two dimensional electron fluid

Abstract: We discuss how the propagation of plasma waves in a High Electron Mobility Transistor (HEMT) can be used to implement a new generation of terahertz devices, including sources, resonant detectors, broad band detectors, and frequency multipliers. Our estimates show that these devices should outperform conventional terahertz devices, which use deep submicron Schottky diodes.