Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals

Abstract: We introduce a method to fabricate high-performance field-effect transistors on the surface of freestanding organic single crystals. The transistors are constructed by laminating a monolithic elastomeric transistor stamp against the surface of a crystal. This method, which eliminates exposure of the fragile organic surface to the hazards of conventional processing, enables fabrication of rubrene transistors with charge carrier mobilities as high as approximately 15 cm2/V.s and subthreshold slopes as low as 2nF.V/decade.cm2. Multiple relamination of the transistor stamp against the same crystal does not affect the transistor characteristics; we exploit this reversibility to reveal anisotropic charge transport at the basal plane of rubrene.

Flexible active-matrix displays and shift registers based on solution-processed organic transistors.

Abstract: At present, flexible displays are an important focus of research1,2,3 Further development of large, flexible displays requires a cost-effective manufacturing process for the active-matrix backplane, which contains one transistor per pixel One way to further reduce costs is to integrate (part of) the display drive circuitry, such as row shift registers, directly on the display substrate Here, we demonstrate flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates The displays can be bent to a radius of 1 cm without significant loss in performance Using the same process flow we prepared row shift registers With 1,888 transistors, these are the largest organic integrated circuits reported to date More importantly, the operating frequency of 5 kHz is sufficiently high to allow integration with the display operating at video speed This work therefore represents a major step towards 'system-on-plastic'

A low-power low-noise CMOS amplifier for neural recording applications

Abstract: There is a need among scientists and clinicians for low-noise low-power biosignal amplifiers capable of amplifying signals in the millihertz-to-kilohertz range while rejecting large dc offsets generated at the electrode-tissue interface. The advent of fully implantable multielectrode arrays has created the need for fully integrated micropower amplifiers. We designed and tested a novel bioamplifier that uses a MOS-bipolar pseudoresistor element to amplify low-frequency signals down to the millihertz range while rejecting large dc offsets. We derive the theoretical noise-power tradeoff limit - the noise efficiency factor - for this amplifier and demonstrate that our VLSI implementation approaches this limit by selectively operating MOS transistors in either weak or strong inversion. The resulting amplifier, built in a standard 1.5-/spl mu/m CMOS process, passes signals from 0.025Hz to 7.2 kHz with an input-referred noise of 2.2 /spl mu/Vrms and a power dissipation of 80 /spl mu/W while consuming 0.16 mm/sup 2/ of chip area. Our design technique was also used to develop an electroencephalogram amplifier having a bandwidth of 30 Hz and a power dissipation of 0.9 /spl mu/W while maintaining a similar noise-power tradeoff.

Integrated Circuits Based on Bilayer MoS2 Transistors

Abstract: Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene’s advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic...

Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature

Abstract: We report high-performance ZnO thin-film transistor (ZnO-TFT) fabricated by rf magnetron sputtering at room temperature with a bottom gate configuration. The ZnO-TFT operates in the enhancement mode with a threshold voltage of 19V, a saturation mobility of 27cm2∕Vs, a gate voltage swing of 1.39V∕decade and an on/off ratio of 3×105. The ZnO-TFT presents an average optical transmission (including the glass substrate) of 80% in the visible part of the spectrum. The combination of transparency, high mobility, and room-temperature processing makes the ZnO-TFT a very promising low-cost optoelectronic device for the next generation of invisible and flexible electronics.