Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.

SiC power-switching devices-the second electronics revolution?

Abstract: Silicon carbide (SiC) offers significant advantages for power-switching devices because the critical field for avalanche breakdown is about ten times higher than in silicon. SiC power devices have made remarkable progress in the past five years, demonstrating currents in excess of 100 A and blocking voltages in excess of 19000 V. In this paper we describe the latest progress in three classes of SiC devices: diodes (p-i-n and Schottky), transistors (junction field-effect transistor, metal-oxide-semiconductor field-effect transistor, and bipolar junction transistor), and thyristors (gate turn-off).

Pixel and organic light emitting display device using the same

Abstract: A pixel includes a pixel circuit to control an amount of current supplied from a first power source to an organic light emitting diode (OLED) based on a data signal. At least one first transistor is located in a current path between the first power source and OLED. A second transistor is coupled between a gate electrode of the at least one first transistor and an emission control line through which an emission control signal is supplied. The emission control line controls a state of the at least one first transistor, and the second transistor turns on or off based on the data signal.

Light sensitive display

Abstract: A liquid crystal device includes a front electrode layer, a rear electrode layer, and a liquid crystal material located between the front electrode layer and the rear electrode layer. A first and second transistor each includes three terminals. The first transistor is a photo transistor. The first terminal of the first transistor electrically interconnected to a conductive electrode free from additional electrical elements therebetween. The second terminal of the first transistor is electrically interconnected to the conductive electrode free from additional electrical elements therebetween and the second terminal of the first transistor is maintained at the same potential as the conductive electrode. The first terminal of the first transistor and the second terminal of the first transistor electrically interconnected to one another free from additional electrical elements therebetween and the first terminal of the first transistor and the second terminal of the first transistor are maintained at the same potential. The second terminal of the first transistor is a gate of the first transistor. The third terminal of the first transistor electrically interconnected to the first terminal of the second transistor free from additional electrical elements therebetween and maintained at the same potential. The second transistor provides a readout function for the circuit. The second terminal of the second transistor electrically connected to one of the select electrodes. The second terminal of the second transistor is a gate of the second transistor. The third terminal of the second transistor is electrically interconnected to a readout system. The second transistor is substantially inhibited from receiving ambient light thereon. The first transistor is not substantially inhibited from receiving ambient light thereon. The first transistor and the second transistor being together with the rear electrode layer. The readout system determines a region of the device that experiences a change in the light level impinging on the device.

Antimonide-based compound semiconductors for electronic devices: A review

Abstract: Several research groups have been actively pursuing antimonide-based electronic devices in recent years. The advantage of narrow-bandgap Sb-based devices over conventional GaAs- or InP-based devices is the attainment of high-frequency operation with much lower power consumption. This paper will review the progress on three antimonide-based electronic devices: high electron mobility transistors (HEMTs), resonant tunneling diodes (RTDs), and heterojunction bipolar transistors (HBTs). Progress on the HEMT includes the demonstration of Ka- and W-band low-noise amplifier circuits that operate at less than one-third the power of similar InP-based circuits. The RTDs exhibit excellent figures of merit but, like their InP- and GaAs-based counterparts, are waiting for a viable commercial application. Several approaches are being investigated for HBTs, with circuits reported using InAs and InGaAs bases.

Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors

Abstract: Electron concentration profiles have been obtained for AlxGa1−xN/GaN heterostructure field-effect transistor structures Analysis of the measured electron distributions demonstrates the influence of piezoelectric effects in coherently strained layers on III-V nitride heterostructure device characteristics Characterization of a nominally undoped Al015Ga085N/GaN transistor structure reveals the presence of a high sheet carrier density in the GaN channel which may be explained as a consequence of piezoelectrically induced charges present at the Al015Ga085N/GaN interface Measurements performed on an Al015Ga085N/GaN transistor structure with a buried Al015Ga085N isolation layer indicate a reduction in electron sheet concentration in the transistor channel and accumulation of carriers below the Al015Ga085N isolation layer, both of which are attributable to piezoelectric effects