Topic
Transistor
About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.
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TL;DR: In this article, the authors report experimental results that replacing hydrogen with deuterium during the final wafer sintering process greatly reduces hot electron degradation effects in metal oxide semiconductor transistors due to a new giant isotope effect.
Abstract: We report experimental results that replacing hydrogen with deuterium during the final wafer sintering process greatly reduces hot electron degradation effects in metal oxide semiconductor transistors due to a new giant isotope effect. Transistor lifetime improvements by factors of 10–50 are observed. A plausible physical theory suggests that the benefits of deuterium use may be general and also applicable to other areas of semiconductor device processing and fabrication.
326 citations
TL;DR: An algorithmic analog-to-digital conversion technique is described which is capable of achieving high-resolution conversion without the use of matched capacitors in an MOS technology.
Abstract: An algorithmic analog-to-digital conversion technique is described which is capable of achieving high-resolution conversion without the use of matched capacitors in an MOS technology. The exact integral multiplication of the signal required by the conversion is realized through an algorithmic circuit method which involves charge summing with an MOS integrator and exchange of capacitors. A first-order cancellation of the charge injection effect from MOS transistor switches is attained with a combination of differential circuit implementation and an optimum timing scheme. An experimental prototype has been fabricated with a standard 5-/spl mu/m n-well CMOS process. It achieves 12-bit resolution at a sampling rate of 8 kHz. The analog chip area measures 2400 mils/SUP 2/.
325 citations
TL;DR: In this article, a single-electron quantum-dot transistor was fabricated, which showed drain current oscillations at room temperature, attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel.
Abstract: We fabricated a silicon single-electron quantum-dot transistor, which showed drain current oscillations at room temperature. These oscillations are attributed to electron tunneling through a single silicon quantum dot inside a narrow wire channel. Analysis of its current–voltage characteristic indicates that the energy level separation is about 110 meV and the silicon dot diameter is about 12 nm.
325 citations
TL;DR: In this article, two mobility metrics, μavg and μinc, are developed and proposed as relevant tools in the characterization of non-ideal TFTs, which are employed to characterize the ZnO-channel thin-film transistor (TFT) reported in this paper.
Abstract: ZnO-channel thin-film transistor (TFT) test structures are fabricated using a bottom-gate structure on thermally oxidized Si; ZnO is deposited via RF sputtering from an oxide target, with an unheated substrate. Electrical characteristics are evaluated, with particular attention given to the extraction and interpretation of transistor channel mobility. ZnO-channel TFT mobility exhibits severe deviation from that assumed by ideal TFT models; mobility extraction methodology must accordingly be recast so as to provide useful insight into device operation. Two mobility metrics, μavg and μinc, are developed and proposed as relevant tools in the characterization of nonideal TFTs. These mobility metrics are employed to characterize the ZnO-channel TFTs reported herein; values for μinc as high as 25 cm2/V s are measured, comprising a substantial increase in ZnO-channel TFT mobility as compared to previously reported performance for such devices.
325 citations
325 citations