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Transistor
About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.
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TL;DR: By stopping a light pulse in an atomic ensemble contained inside an optical resonator, the realization of an all-optical transistor is realized, in which one stored gate photon controls the resonator transmission of subsequently applied source photons.
Abstract: The realization of an all-optical transistor, in which one “gate” photon controls a “source” light beam, is a long-standing goal in optics. By stopping a light pulse in an atomic ensemble contained inside an optical resonator, we realized a device in which one stored gate photon controls the resonator transmission of subsequently applied source photons. A weak gate pulse induces bimodal transmission distribution, corresponding to zero and one gate photons. One stored gate photon produces fivefold source attenuation and can be retrieved from the atomic ensemble after switching more than one source photon. Without retrieval, one stored gate photon can switch several hundred source photons. With improved storage and retrieval efficiency, our work may enable various new applications, including photonic quantum gates and deterministic multiphoton entanglement.
316 citations
TL;DR: In this paper, a SnO2 transparent thin-film transistor (TTFT) was demonstrated, and the authors achieved the maximum field effect mobilities of 0.8 cm2 V−1 s−1 and 2.0 cm 2 V− 1 s− 1 for enhancement and depletion modes, respectively.
Abstract: A SnO2 transparent thin-film transistor (TTFT) is demonstrated. The SnO2 channel layer is deposited by RF magnetron sputtering and then rapid thermal annealed in O2 at 600°C. The TTFT is highly transparent, and enhancement-mode behaviour is achieved by employing a very thin channel layer (10–20 nm). Maximum field-effect mobilities of 0.8 cm2 V−1 s−1 and 2.0 cm2 V−1 s−1 are obtained for enhancement- and depletion-mode devices, respectively. The transparent nature and the large drain current on-to-off ratio of 105 associated with the enhancement-mode behaviour of these devices may prove useful for novel gas-sensor applications.
316 citations
TL;DR: A superposition method is proposed to optimize the performance of multiple-output rectifiers and Constant-power scaling and area-efficient design are discussed.
Abstract: Design strategy and efficiency optimization of ultrahigh-frequency (UHF) micro-power rectifiers using diode-connected MOS transistors with very low threshold voltage is presented. The analysis takes into account the conduction angle, leakage current, and body effect in deriving the output voltage. Appropriate approximations allow analytical expressions for the output voltage, power consumption, and efficiency to be derived. A design procedure to maximize efficiency is presented. A superposition method is proposed to optimize the performance of multiple-output rectifiers. Constant-power scaling and area-efficient design are discussed. Using a 0.18-mum CMOS process with zero-threshold transistors, 900-MHz rectifiers with different conversion ratios were designed, and extensive HSPICE simulations show good agreement with the analysis. A 24-stage triple-output rectifier was designed and fabricated, and measurement results verified the validity of the analysis
315 citations
TL;DR: A physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits is presented.
Abstract: This paper presents a physically based model for the metal-oxide-semiconductor (MOS) transistor suitable for analysis and design of analog integrated circuits. Static and dynamic characteristics of the MOS field-effect transistor are accurately described by single-piece functions of two saturation currents in all regions of operation. Simple expressions for the transconductance-to-current ratio, the drain-to-source saturation voltage, and the cutoff frequency in terms of the inversion level are given. The design of a common-source amplifier illustrates the application of the proposed model.
314 citations
TL;DR: Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.
Abstract: Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer GaTe shows a p-type action with a hole mobility of about 0.2 cm2 V–1 s–1. The gate transistor exhibits a high photoresponsivity of 104 A/W, which is greatly better than that of graphene, MoS2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer GaTe is a promising candidate for future optoelectronic and photosensitive device applications.
314 citations