Topic
Transistor
About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.
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TL;DR: In this paper, an emerging factor that may disrupt this trend is the slowing speed of signal propagation within the chip, caused by the interconnection wiring, increase with each generation of scaling and may limit the overall performance of the integrated system.
296 citations
TL;DR: In this article, a multi-species microprobe structure for potentiometric measurements and the appropriate patterning techniques of the chemically-sensitive membranes is described, which allows successive patterning of both vacuum-deposited inorganics and spin coated polymers and gels.
296 citations
TL;DR: In this article, the distortion components for elementary transistor stages such as a single-transistor amplifier and a differential pair using bipolar transistors or MOSTs were defined and the influence of feedback was examined.
Abstract: In this paper the distortion components are defined for elementary transistor stages such as a single-transistor amplifier and a differential pair using bipolar transistors or MOSTs Moreover, the influence of feedback is examined Numerical examples are given for sake of illustration
296 citations
01 Jun 1962
TL;DR: A thin-film transistor, TFT, fabricated by evaporation of all components on to an insulating substrate has been developed as mentioned in this paper, and operation is based upon the control of injected majority carriers in a wideband-gap semiconductor by means of an insulated control gate.
Abstract: A thin-film transistor, TFT, fabricated by evaporation of all components on to an insulating substrate has been developed. Operation is based upon the control of injected majority carriers in a wide-band-gap semiconductor by means of an insulated control gate. Experimental units using microcrystalline layers of cadmium sulfide have yielded voltage amplification factors greater than 100, transconductances greater than 10,000 , ?mho, input impedances greater than 106 ? shunted by 50 pf and gain-bandwidth products greater than 10 Mc. Switching speeds of less than 0.1 ?sec have been observed. Simple evaporated thin-film circuits incorporating the TFT have been built. Direct coupling between stages is permitted since the insulated gate electrode can be biased positively as well as negatively without drawing appreciable gate current. Modified forms of the TFT have been built for use as a flip-flop, an AND gate and a NOR gate in computer applications.
294 citations
01 Dec 1998
TL;DR: In this paper, a quasi-planar fold-channel transistor structure was proposed for the vertical double-gate SOI MOSFETs, which improved the short channel effect immunities.
Abstract: Deep-sub-tenth micron MOSFETs with gate length down to 20 nm are reported To improve the short channel effect immunities, a novel folded channel transistor structure is proposed The quasi-planar nature of this new variant of the vertical double-gate SOI MOSFETs simplified the fabrication process The special features of the structure are: (1) a transistor is formed in a vertical ultra-thin Si fin and is controlled by a double-gate, which suppresses short channel effects; (2) the two gates are self-aligned and are aligned to the S/D; (3) S/D is raised to reduce the parasitic resistance; (4) new low-temperature gate or ultra-thin gate dielectric materials can be used because they are deposited after the S/D; and (5) the structure is quasi-planar because the Si fins are relatively short
292 citations