Topic
Transistor
About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.
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TL;DR: The technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications, including noise figure, linearity, gain, phase noise, and power dissipation are summarized.
Abstract: This paper will summarize the technology tradeoffs that are involved in the implementation of radio frequency integrated circuits for wireless communications. Radio transceiver circuits have a very broad range of requirements-including noise figure, linearity, gain, phase noise, and power dissipation. The advantages and disadvantages of each of the competing technologies-Si CMOS and bipolar junction transistors (BJTs), Si/SiGe HBTs and GaAs MESFETs, PHEMTS and HBTs will be examined in light of these requirements.
278 citations
TL;DR: In this article, a power-efficient charge pump is proposed, which uses low-voltage transistors and a simple two-phase clocking scheme to obtain high current, high efficiency, and small area.
Abstract: A power-efficient charge pump is proposed. The use of low-voltage transistors and of a simple two-phase clocking scheme permits the use of higher operating frequencies compared to conventional solutions, thus obtaining high current, high efficiency, and small area. Measurements show good results for frequencies around 100 MHz. Two test patterns have been fabricated, one with three stages and one with five stages, in a 1.8-V 0.18-/spl mu/m triple-well standard CMOS digital process (six metals). High-voltage capacitors have been implemented using metal to metal parasitic capacitance.
277 citations
TL;DR: A single molecule field effect transistor (FET) which consists of a redox molecule covalently bonded to a source and drain electrode and an electrochemical gate is demonstrated, in the fashion of an n-type FET.
Abstract: We have demonstrated a single molecule field effect transistor (FET) which consists of a redox molecule (perylene tetracarboxylic diimide) covalently bonded to a source and drain electrode and an electrochemical gate. By adjusting the gate voltage, the energy levels of empty molecular states are shifted to the Fermi level of the source and drain electrodes. This results in a nearly 3 orders of magnitude increase in the source-drain current, in the fashion of an n-type FET. The large current increase is attributed to an electron transport mediated by the lowest empty molecular energy level when it lines up with the Fermi level.
277 citations
TL;DR: In this article, a hot electron transistor (RHET) is demonstrated in which electrons are injected from emitter to base by resonant-tunneling through a quantum well, and are near-ballistically transferred to a collector.
Abstract: -A new functional, resonant-tunneling hot electron transistor (RHET) is demonstrated in which electrons are injected from emitter to base by resonant-tunneling through a quantum well, and are near-ballistically transferred to a collector. The main feature of this device is a peaked collector-current characteristic with respect to the base-emitter voltage. This enables us to build a frequency multiplier or an Exclusive-NOR gate using only one transistor.
276 citations
Patent•
26 Feb 2001
TL;DR: In this article, a method of manufacturing an integrated circuit with a channel region containing germanium was proposed. But the method can provide a double planar gate structure over lateral sidewalls of channel region.
Abstract: A method of manufacturing an integrated circuit with a channel region containing germanium. The method can provide a double planar gate structure. The gate structure can be provided over lateral sidewalls of channel region. The semiconductor material containing germanium can increase the charge mobility associated with the transistor. An epitaxy process can form the channel region. A silicon-on-insulator can be used.
276 citations