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Transistor

About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.


Papers
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Journal ArticleDOI
TL;DR: In this paper, the cutoff frequency of carbon nanotube transistors is analyzed and the influence of quantum capacitance, kinetic inductance, and ballistic transport on the high-frequency properties of nanotubes is analyzed.
Abstract: We present phenomenological predictions for the cutoff frequency of carbon nanotube transistors. We also present predictions of the effects parasitic capacitances on AC nanotube transistor performance. The influence of quantum capacitance, kinetic inductance, and ballistic transport on the high-frequency properties of nanotube transistors is analyzed. We discuss the challenges of impedance matching for ac nano-electronics in general, and show how integrated nanosystems can solve this challenge. Our calculations show that carbon nano-electronics may be faster than conventional Si, SiGe, GaAs, or InP semiconductor technologies. We predict a cutoff frequency of 80 GHz/L, where L is the gate length in microns, opening up the possibility of a ballistic THz nanotube transistor.

250 citations

Journal ArticleDOI
TL;DR: In this article, two AB GaAs field effect transistor (FET) power amplifiers have been designed and fabricated in the 4.4-4.8 GHz range, and a dielectric PBG line was incorporated in the design to tune the second harmonic.
Abstract: Two class AB GaAs field-effect transistor (FET) power amplifiers have been designed and fabricated in the 4.4-4.8 GHz range. In the first case, a dielectric PBG line was incorporated in the design to tune the second harmonic. In the second case, a 50-/spl Omega/ line is used with no harmonic tuning. The PBG structure allows broad-band harmonic tuning and is inexpensive to fabricate. A 5% improvement in power-added efficiency was achieved at the design frequency of 4.5 GHz, in both simulation and measurement.

250 citations

Journal ArticleDOI
TL;DR: In this review, the merits of solution-processed metal oxide semiconductors are discussed and their application in thin-film transistors for large-area electronics is considered.
Abstract: In this review, we discuss the merits of solution-processed metal oxide semiconductors and consider their application in thin-film transistors for large-area electronics.

250 citations

Journal ArticleDOI
TL;DR: In this article, the authors reported the realization of field effect transistors (FETs) made with chemically synthesized multilayer crystal semiconductor WS2, which demonstrated ambipolar behavior and a high (∼105×) on/off current ratio at room temperature with current saturation.
Abstract: We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer crystal semiconductor WS2. The Schottky-barrier FETs demonstrate ambipolar behavior and a high (∼105×) on/off current ratio at room temperature with current saturation. The behavior is attributed to the presence of an energy bandgap in the ultrathin layered semiconductor crystal material. The FETs also show clear photo response to visible light. The promising electronic and optical characteristics of the devices combined with the chemical synthesis, and flexibility of layered semiconductor crystals such as WS2 make them attractive for future electronic and optical devices.

250 citations

Patent
20 Dec 2002
TL;DR: In this paper, a high frequency inverter (20) and an impedance circuit (30) are used to produce a high-frequency voltage source whereby the impedance circuit directs a flow of alternating current through a LED array (40).
Abstract: A LED driver (10) is disclosed. The LED driver (10) includes a high frequency inverter (20) and an impedance circuit (30). The high frequency inverter (20) operates to produce a high frequency voltage source whereby the impedance circuit (30) directs a flow of alternating current through a LED array (40) including one or more anti-parallel LED pairs, one or more anti-parallel LED strings, and/or one or more anti-parallel LED matrixes. A transistor (T3) can be employed to divert the flow of the alternating current from the LED array (40), or to vary the flow of the alternating current through LED array (40).

250 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
20231,850
20224,013
20211,802
20203,677
20194,203
20184,241