Topic
Transistor
About: Transistor is a research topic. Over the lifetime, 138090 publications have been published within this topic receiving 1455233 citations.
Papers published on a yearly basis
Papers
More filters
Book•
01 Jan 1997
TL;DR: Bipolar Transistors (P Asbeck) Compound-Semiconductor Field Effect Transistors(M Shur & T Fjeldly) MOSFETs and Related Devices (S Hillenius) Power Devices (B Baliga) Quantum-Effect and Hot-Electron Devices(S Luryi & A Zaslavsky) Active Microwave Diodes (H Eisele & G Haddad) High-Speed Photonic Devices (T Lee & S Chandrasekhar) Solar Cells (M Green) Appendices Index
Abstract: Bipolar Transistors (P Asbeck) Compound-Semiconductor Field-Effect Transistors (M Shur & T Fjeldly) MOSFETs and Related Devices (S Hillenius) Power Devices (B Baliga) Quantum-Effect and Hot-Electron Devices (S Luryi & A Zaslavsky) Active Microwave Diodes (H Eisele & G Haddad) High-Speed Photonic Devices (T Lee & S Chandrasekhar) Solar Cells (M Green) Appendices Index
246 citations
Patent•
19 Jun 2001
TL;DR: In this article, a CMOS inverter having a heterostructure including a Si substrate, a relaxed Si1-xGex layer on the Si substrate and a strained surface layer on said relaxed Si 1-xgex layer is presented.
Abstract: A CMOS inverter having a heterostructure including a Si substrate, a relaxed Si1-xGex layer on the Si substrate, and a strained surface layer on said relaxed Si1-xGex layer; and a pMOSFET and an nMOSFET, wherein the channel of said pMOSFET and the channel of the nMOSFET are formed in the strained surface layer. Another embodiment provides an integrated circuit having a heterostructure including a Si substrate, a relaxed Si1-xGex layer on the Si substrate, and a strained layer on the relaxed Si1-xGex layer; and a p transistor and an n transistor formed in the heterostructure, wherein the strained layer comprises the channel of the n transistor and the p transistor, and the n transistor and the p transistor are interconnected in a CMOS circuit.
246 citations
TL;DR: In this paper, a single-walled carbon nanotube transistor operation at 2.6 GHz was demonstrated using a resonant LC impedance-matching circuit, and the results showed that the ac source-drain impedance was different from the dc source-drain resistance, which may be due to the distributed nature of the capacitive and inductive impedance of the contacts to the nanotubes.
Abstract: We present the first demonstration of single-walled carbon nanotube transistor operation at microwave frequencies. To measure the sourcedrain ac current and voltage at microwave frequencies, we construct a resonant LC impedance-matching circuit at 2.6 GHz. Both semiconducting and metallic nanotubes are measured. Varying the back-gate voltage for a semiconducting nanotube at dc varies the 2.6-GHz source-drain impedance. In contrast, varying the back-gate voltage on a metallic nanotube at dc has no effect on the microwave source-drain impedance. We find the ac source-drain impedance to be different than the dc source-drain resistance, which may be due to the distributed nature of the capacitive and inductive impedance of the contacts to the nanotube. The dynamical (ac) electrical properties of carbon nanotubes are technologically relevant for both active and passive devices made from carbon nanotubes. At dc, it is known that electrons can move without scattering over many micrometers inside a carbon nanotube. 1 We recently analyzed, from a theoretical point of view, the microwave passive 2,3 and active 4,5 electrical properties of nanotubes in some detail. The successful operation of a multiwalled carbon nanotube rf single-electron transistor was recently reported. 6 In this paper, we present the first measurements of the electrical properties of single-walled nanotubes at gigahertz frequencies. 7 In so doing, we demonstrate, for the first time,
246 citations
TL;DR: An organic flexible temperature-sensor array exhibits great potential in health monitoring and other biomedical applications and allows defect predictions of electronic devices, remote sensing of harsh environments, and e-skin applications.
Abstract: An organic flexible temperature-sensor array exhibits great potential in health monitoring and other biomedical applications. The actively addressed 16 × 16 temperature sensor array reaches 100% yield rate and provides 2D temperature information of the objects placed in contact, even if the object has an irregular shape. The current device allows defect predictions of electronic devices, remote sensing of harsh environments, and e-skin applications.
244 citations
01 Sep 1989
TL;DR: In this article, a 7 kW voltage-sourced reversible rectifier (VSRR) which achieves bidirectional power flow between a single-phase AC supply and a DC busbar voltage is described.
Abstract: A 7 kW voltage-sourced reversible rectifier (VSRR) which achieves bidirectional power flow between a single-phase AC supply and a DC busbar voltage is described. A current-forced control (CFC) strategy is used to switch two power transistors, enabling the device to operate with a unity power factor and a sinusoidal line current to produce a regulated DC busbar voltage. The advantages of the scheme are its simplicity, an extremely fast and well damped response and its adaptive nature to nonlinear effects such as transistor switching delays. The device operates with a DC busbar voltage which is greater than the peak-to-peak voltage of the utility supply so that it is especially suitable for use as a source of power in a variable-speed AC induction-motor drive.
242 citations