Topic
Tungsten
About: Tungsten is a research topic. Over the lifetime, 35225 publications have been published within this topic receiving 456213 citations. The topic is also known as: W & element 74.
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TL;DR: In this paper, the existence of a grain size threshold for enhanced irradiation resistance in high-temperature helium-irradiated nanocrystalline and ultrafine tungsten is demonstrated.
Abstract: Nanocrystalline metals are considered highly radiation-resistant materials due to their large grain boundary areas. Here, the existence of a grain size threshold for enhanced irradiation resistance in high-temperature helium-irradiated nanocrystalline and ultrafine tungsten is demonstrated. Average bubble density, projected bubble area and the corresponding change in volume were measured via transmission electron microscopy and plotted as a function of grain size for two ion fluences. Nanocrystalline grains of less than 35 nm size possess ∼10–20 times lower change in volume than ultrafine grains and this is discussed in terms of the grain boundaries defect sink efficiency.
85 citations
Patent•
IBM1
TL;DR: In this paper, a process for preparing tungsten silicide films using low pressure, low temperature chemical vapor deposition to deposit silicon-rich Tungsten-silicide films is described.
Abstract: A process for preparing tungsten silicide films using low pressure, low temperature chemical vapor deposition to deposit silicon-rich tungsten silicide films. As a source of silicon, higher order silanes, such as disilane and trisilane, are used. The gaseous tungsten source is WF 6 . The substrate temperature range is less than about 370° C., while the total pressure range is in the range 0.05-1 Torr. WF 6 flow rates are generally less than 25 sccm, while the higher order silane flow rates are generally less than about 400 sccm.
85 citations
85 citations
TL;DR: In this paper, the authors used in situ quartz crystal microbalance (QCM) measurements as a function of the reactant exposure and deposition temperature to explore the atomic layer deposition (ALD) of tungsten.
85 citations
Patent•
03 Mar 1999TL;DR: In this paper, a nitride compound semiconductor light emitting element is made by stacking a metal layer made of one of elements: palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co) and copper (Cu), to increase the adhesive strength of its electrodes with a semiconductor layer, reduce the contact resistance of the electrodes to improve the ohmic characteristics.
Abstract: A nitride compound semiconductor light emitting element is made by stacking a metal layer made of one of elements: palladium (Pd), scandium (Sc), vanadium (V), zirconium (Zr), hafnium (Hf), tantalum (Ta), rhodium (Rh), iridium (Ir), cobalt (Co) and copper (Cu), and another metal layer made of one of elements: titanium (Ti), nickel (Ni), molybdenum (Mo), tungsten (W) and magnesium (Mg), to increase the adhesive strength of its electrodes with a semiconductor layer, reduce the contact resistance of the electrodes to improve the ohmic characteristics, and improve the external quantum efficiency by combination of thin-film metals with a transparent electrode.
84 citations