Topic
Tungsten
About: Tungsten is a research topic. Over the lifetime, 35225 publications have been published within this topic receiving 456213 citations. The topic is also known as: W & element 74.
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TL;DR: In this article, XPS and electrochemical investigations reveal that molybdenum and tungsten prevent dissolution of chromium from the air-formed films during potentiostatic passivation.
80 citations
TL;DR: In this article, the effects of high-energy milling on the sinterability of tungsten in microwave and to make a comparative assessment between as-received (coarser) and activated (finer) Tungsten powder in terms of their response to microwave sintering, densification and microstructure.
Abstract: This study aims at microwave sintering of pure tungsten powder of as-received grade and tungsten powder activated by high-energy milling (HEM). Both the powder compacts are sintered under identical conditions and their sinterability is compared and analyzed for process optimization. Activated powder responds to microwaves and shows significant densification in a relatively shorter duration. The scope of the present work is to understand the effects of high-energy milling on the sinterability of tungsten in microwave and to make a comparative assessment between as-received (coarser) and activated (finer) tungsten powder in terms of their response to microwave sintering, densification and microstructure.
80 citations
TL;DR: In this article, it was shown that electrons, photoexcited in the GaAs, can diffuse through the coating of Cs-O without a significant loss in number, and that the work function of such coatings is at least as low as that of GaAs-Cs.
Abstract: High-yield photoemission, already reported for GaAs-Cs, is also observed for GaAs-Cs-O. Spectral distributions of yields from both GaAs and tungsten with surface coatings of Cs-O indicate that the work function of such coatings is at least as low as that of GaAs-Cs. Photoemissive yields from GaAs-Cs-O have approximated to the highest observed from GaAs-Cs and have exhibited greater stability. It is concluded that electrons, photoexcited in the GaAs, can diffuse through the coating of Cs-O without a significant loss in number.
80 citations
TL;DR: Silica-supported tungsten disulfide was prepared by the reaction of WO/sub 3/SiO/Sub 2/ with H/sub 2/S at 300/sup 0/C.
Abstract: Silica-supported tungsten disulfide was prepared by the reaction of WO/sub 3//SiO/sub 2/ with H/sub 2/S at 300/sup 0/C. The WS/sub 2/ hexagonal structure was confirmed by X-ray diffraction analysis. AES and XPS studies show the existence of residual tungsten oxides in addition to WS/sub 2/. Hydrogen evolution properties of WS/sub 2//SiO/sub 2/ were determined by catalytic and photocatalytic (in the presence of fluorescein or CdS as sensitizers) tests and by electrochemical measurements. These were compared with silica-supported platinum. Although a graphite electrode immersed in a Pt/SiO/sub 2/ slurry evolved hydrogen at a more positive applied potential than in a WS/sub 2//SiO/sub 2/ slurry, silica-supported tungsten disulfide was more active and stable than Pt/SiO/sub 2/ for catalytic hydrogen production both in the dark and under visible light illumination (with cadmium sulfide as a sensitizer).
80 citations