Tungsten

About: Tungsten is a research topic. Over the lifetime, 35225 publications have been published within this topic receiving 456213 citations. The topic is also known as: W & element 74.

A polishing composition including an inhibitor of tungsten etching

Abstract: A chemical mechanical polishing composition and slurry comprising a composition capable of etching tungsten and at least one inhibitor of tungsten etching and methods for using the composition and slurry to polish tungsten containing substrates.

High strength alloys

Abstract: High strength metal alloys are described. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. A heater system may include a canister at least partially made from material containing at least one of the metal alloys. A system for heating a subterranean formation may include a tublar that is at least partially made from a material containing at least one of the metal alloys.

Thermal expansion of periclase (MgO) and tungsten (W) to melting temperatures Sample: T = 298 K

Abstract: Abstract In situ x-ray data on molar volumes of periclase and tungsten have been collected over the temperature range from 300 K to melting. We determine the temperature by combining the technique of spectroradiometry and electrical resistance wire heating. The thermal expansion (α) of periclase between 300 and 3100 K is given by α=2.6025 10−5+1.3535 10−8 T+6.5687 10−3 T−1−1.8281 T−2.For tungsten, we have (300 to 3600 K) α=7.862 10−6+6.392 10−9 T.The data at 298 K for periclase is: molar volume 11.246 (0.031) cm3, α=3.15 (0.07) 10−5 K−1, and for tungsten: molar volume 9.55 cm3, α=9.77 (10.08) 10−6 K−1.

Electrically programmable antifuse element incorporating a dielectric and amorphous silicon interlayer

Abstract: An electrically programmable antifuse element incorporates a composite interlayer of dielectric material and amorphous silicon interposed between two electrodes. The lower electrode may be formed from a refractory metal such as tungsten. Preferably, a thin layer of titanium is deposited over the tungsten layer and its surface is then oxidized to form a thin layer of titanium oxide which serves as the dielectric material of the composite dielectric/amorphous silicon interlayer. A layer of amorphous silicon is then deposited on top of the titanium oxide dielectric to complete the formation of the composite interlayer. A topmost layer of a refractory metal such as tungsten is then applied over the amorphous silicon to form the topmost electrode of the antifuse.