Tungsten

About: Tungsten is a research topic. Over the lifetime, 35225 publications have been published within this topic receiving 456213 citations. The topic is also known as: W & element 74.

Tungsten oxide processing

Abstract: Methods of selectively etching tungsten oxide relative to tungsten, silicon oxide, silicon nitride and/or titanium nitride are described. The methods include a remote plasma etch using plasma effluents formed from a fluorine-containing precursor in combination with ammonia (NH 3 ). Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the tungsten oxide. The plasmas effluents react with exposed surfaces and selectively remove tungsten oxide while very slowly removing other exposed materials. Increasing a flow of ammonia during the process removes a typical skin of tungsten oxide having higher oxidation coordination number first and then selectively etching lower oxidation tungsten oxide. In some embodiments, the tungsten oxide etch selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region.

Electroplating of Amorphous Thin Films of Tungsten/Nickel Alloys

Abstract: The electroplating of amorphous Ni/W alloys is described. The aqueous plating solution consists of NiSO4, Na2WO4, and Na3Cit at pH = 8.0. The bath is operated at room temperature. By avoiding the use of NH4OH or any ammonium salt, it was possible to prepare alloys containing up to 50 a/o (76 w/o) W. XRD measurements revealed that amorphous alloys were obtained when the concentration of W in the alloy is 20−40 a/o. At lower concentrations of W the fcc substitutional solid solution Ni(1-x)Wx was formed. At higher concentration, an orthorhombic crystal structure corresponding to a 1/1 Ni/W alloy was observed. SEM and STM measurements supported the existence of the amorphous phase. The conditions under which amorphous alloys are expected to be formed preferentially are discussed. Thin films of the amorphous phase were prepared reproducibly at any tungsten concentration in the above range. Therefore, these alloys can be used for barrier or capping layers in the microelectronic industry for ULSI and MEMS applic...

Self-Limiting Oxides on WSe2 as Controlled Surface Acceptors and Low-Resistance Hole Contacts

Abstract: Transition metal oxides show much promise as effective p-type contacts and dopants in electronics based on transition metal dichalcogenides. Here we report that atomically thin films of under-stoichiometric tungsten oxides (WOx with x < 3) grown on tungsten diselenide (WSe2) can be used as both controlled charge transfer dopants and low-barrier contacts for p-type WSe2 transistors. Exposure of atomically thin WSe2 transistors to ozone (O3) at 100 °C results in self-limiting oxidation of the WSe2 surfaces to conducting WOx films. WOx-covered WSe2 is highly hole-doped due to surface electron transfer from the underlying WSe2 to the high electron affinity WOx. The dopant concentration can be reduced by suppressing the electron affinity of WOx by air exposure, but exposure to O3 at room temperature leads to the recovery of the electron affinity. Hence, surface transfer doping with WOx is virtually controllable. Transistors based on WSe2 covered with WOx show only p-type conductions with orders of magnitude be...

The mechanical and thermophysical properties of ZrC/W composites at elevated temperature

Abstract: In order to improve the elevated temperature mechanical properties and modify the thermophysical properties of tungsten, tungsten matrix composites containing 30 vol.% zirconium carbide particles (ZrC/W) were prepared by vacuum hot-pressing at 2000 °C. Flexural strength of ZrC/W composites increases gradually with increasing temperature and reaches a maximum value at 1000 °C. The observation of the fracture characteristics of ZrC/W composites at various temperatures reveals that the excellent elevated temperature strength is attributed to the brittle–ductile transition in the tungsten matrix, which allows a more effective strengthening effect from the zirconium carbide particles. The elastic modulus decreases slightly with increasing temperature from room temperature to 1200 °C, and as a result of the addition of zirconium carbide particles the modulus of ZrC/W is higher than that of monolithic tungsten at all testing temperatures. The addition of zirconium carbide remarkably decreases the thermal conductivity of the composites. The unique combination of high melting point, good high temperature strength, high elastic modulus, and low thermal conductivity is very beneficial to the high temperature application of ZrC/W composites.