Vacuum chamber

About: Vacuum chamber is a research topic. Over the lifetime, 23497 publications have been published within this topic receiving 152353 citations.

An Electron Microscope Study on Fine Metal Particles Prepared by Evaporation in Argon Gas at Low Pressure

Abstract: Fine particles of various metals (Mg, Al, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ag, Cd, Sn, Au, Pb and Bi) were prepared by evaporation in argon gas at low pressure. The evaporation was carried out in an ordinary vacuum evaporation unit using a tungsten wire basket heater, after introducing the gas into the vacuum chamber. The average particle size was controlled by changing the pressure of the argon. Particle diameter varied from about one hundred Angstoms at 1 mm Hg to a few tenths of a micron at 30 mm Hg. It was proved by electron diffraction that the particles of all the metals (except Pb) were not seriously oxidized in the air. Electron micrographs showed well defined crystal habits for some metals, e.g. hexagonal plates for magnesium and cubes for chromium. Remarkable "necklace-like arrangements" were observed for particles of the ferromagnetic metals. Many electron micrographs and diffraction patterns are reproduced to show the size, shape, arrangement and state of oxidation of the particles.

Atomic layer deposition apparatus for depositing atomic layer on multiple substrates

Abstract: An atomic layer deposition (ALD) apparatus capable of depositing a thin film on a plurality of substrates. The atomic layer deposition apparatus includes: a vacuum chamber, a reactor installed in the vacuum chamber, having a plurality of modules which can be assembled and disassembled as desired, a plurality of stages as spaces partitioned by assembling the plurality of modules, and openings which allow each stage to receive one substrate; a gas supply portion installed in the reactor, for supplying reaction gases and a purging gas to the reactor; and a plurality of gas supply lines installed in the modules, for injecting the gases from the gas supply portion into the stages.

High density plasma CVD and etching reactor

Abstract: The disclosure relates to an RF inductively coupled plasma reactor including a vacuum chamber (102) for processing a wafer (82), one or more gas sources (98, 100) for introducing into the chamber reactant gases, and an antenna (80) capable of radiating RF energy into the chamber to generate a plasma therein by inductive coupling, the antenna lying in a two-dimensionally curved surface. In another embodiment a plasma reactor includes apparatus for spaying a reactant gas at a supersonic velocity toward the portion of the chamber overlying the wafer. In a further embodiment a plasma reactor includes a planar spray showerhead for spraying a reactant gas into the portion of the chamber overlying the wafer with plural spray nozzle openings facing the wafer, and plural magnets in an interior portion of the planar spray nozzle between adjacent ones of the plural nozzle openings, the plural magnets being oriented so as to repel ions from the spray nozzle openings.

Process and apparatus for organic vapor jet deposition

Abstract: A method of fabricating an organic film is provided. A non-reactive carrier gas is used to transport an organic vapor. The organic vapor is ejected through a nozzle block onto a cooled substrate, to form a patterned organic film. A device for carrying out the method is also provided. The device includes a source of organic vapors, a source of carrier gas and a vacuum chamber. A heated nozzle block attached to the source of organic vapors and the source of carrier gas has at least one nozzle adapted to eject carrier gas and organic vapors onto a cooled substrate disposed within the vacuum chamber.

Fabricating capacitive micromachined ultrasonic transducers with wafer-bonding technology

Abstract: Introduces a new method for fabricating capacitive micromachined ultrasonic transducers (CMUTs) that uses a wafer bonding technique. The transducer membrane and cavity are defined on an SOI (silicon-on-insulator) wafer and on a prime wafer, respectively. Then, using silicon direct bonding in a vacuum environment, the two wafers are bonded together to form a transducer. This new technique, capable of fabricating large CMUTs, offers advantages over the traditionally micromachined CMUTs. First, forming a vacuum-sealed cavity is relatively easy since the wafer bonding is performed in a vacuum chamber. Second, this process enables better control over the gap height, making it possible to fabricate very small gaps (less than 0.1 /spl mu/m). Third, since the membrane is made of single crystal silicon, it is possible to predict and control the mechanical properties of the membrane to within 5%. Finally, the number of process steps involved in making a CMUT has been reduced from 22 to 15, shortening the device turn-around time. All of these advantages provide repeatable fabrication of CMUTs featuring predictable center frequency, bandwidth, and collapse voltage.