Showing papers on "Van der Pauw method published in 1970"
TL;DR: Hall effect and sheet resistivity measurements are commonly used to evaluate ion implanted layers as discussed by the authors, and the general principles, sources of error, and factors influencing the measurements are described in detail.
Abstract: Hall effect and sheet resistivity measurements are commonly used to evaluate ion implanted layers. We describe the general principles, sources of error, and factors influencing the measurements. Implantation conditions, sample preparation and measurement technique used for van der Pauw geometry are discussed. Considerations important in annealing, layer removal and measurement temperature are also presented.
75 citations
TL;DR: In this paper, the substitutional boron content of silicon samples implanted at 150 keV at liquid nitrogen temperature to a dose of 3.6 × 1015/cm2 was determined.
Abstract: Silicon samples have been boron implanted at 150 keV at liquid nitrogen temperature to a dose of 3.6 × 1015/cm2. This dose rendered the implanted layer amorphous as viewed by helium ion backscattering. Four kinds of room temperature measurements were made on the same set of samples as a function of the isochronal annealing temperature. The measurements made were the determination of the substitutional boron content by the channeling technique using the B11(p, α) nuclear reaction, observation of the disorder by helium ion backscattering, determination of the carrier concentration by van der Pauw Hall measurements, and the sheet resistivity by four point probe measurements. These measurements are compared with results from samples implanted at room temperature. The carrier concentration correlates well with the substitutional boron content for both room temperature and liquid nitrogen temperature implantations. Following annealing temperatures in the 600 to 800°C range, a much larger percentage of ...
12 citations
TL;DR: In this article, the authors used van der Pauw techniques for mobility measurement of CdS thin films and found that the mobilities of the films could be described by μ=μ0exp(−Eμ/kT) indicating the presence of intercrystalline barriers.
Abstract: Over an appropriate temperature range the conductivity of an extrinsic semiconductor obeys the equation σ=σ0 exp(−E0/kT). For a group of vacuum deposited CdS thin films a plot of log σ0 vs E0 gave a straight line. This type of analysis was made by Berger for CdS films prepared differently from those reported here. In this experiment the films were deposited on heated substrates in a heated enclosure within the system to improve the stoichiometry. Film quality was such that they showed green photoluminescence at 77 K. The temperature range of 250–400 K was examined in greatest detail. Using van der Pauw techniques for mobility measurement, it was found that the mobilities of the films could be described by μ=μ0 exp(−Eμ/kT), indicating the presence of intercrystalline barriers. Since the variation of μ300 K and Eμ with different samples was small compared with the variation of σ300 K and E0, the conductivity variations can be attributed to variations in the free carrier concentration within crystallites. Th...
3 citations