Showing papers on "Van der Pauw method published in 1971"
TL;DR: In this article, the ternary phase diagram was calculated using Darken's quadratic formalism to describe the Ternary liquid which is in equilibrium with a regular pseudobinary solid solution, and the composition of the grown layers was determined by latticeconstant measurements assuming that Vegard's law was obeyed.
Abstract: Liquid‐phase epitaxial layers of InAs1−xPx were grown in the range of 0 < x < 0. 735 on {111} InP substrates. The ternary phase diagram was calculated using Darken's quadratic formalism to describe the ternary liquid which is in equilibrium with a regular pseudobinary solid solution. A number of liquidus isotherms were experimentally determined and found to be in good agreement with the calculated phase diagram. The composition of the grown layers was determined by lattice‐constant measurements assuming that Vegard's law was obeyed. The band gap was determined by photoluminescence at 77 and 300 °K, and was fitted to the form of Eg = A + Bx + Cx2, where A = 0. 421, B = 0.714, and C = 0. 281 eV at 77 °K. The specimens were n type as determined by Van der Pauw measurements.
41 citations
TL;DR: In this paper, a simple model for an inhomogeneous semiconductor which leads to an anomalously high apparent mobility is presented, which casts doubt on the use of a high mobility as an indication of the quality of a semiconductor unless the homogeneity is unambiguously determined or the magnetic field dependence of the Hall constant is carefully examined.
Abstract: In this paper we present a simple model for an inhomogeneous semiconductor which leads to an anomalously high apparent mobility. The model consists of a cylindrically symmetric van der Pauw measurement with a conducting inhomogeneity. This model is analyzed quantitatively and verified experimentally for several measurement configurations. The results cast doubt on the use of a high mobility as an indication of the quality of a semiconductor unless the homogeneity is unambiguously determined or the magnetic field dependence of the Hall constant is carefully examined.
29 citations
TL;DR: In this article, the electrical behavior of zinc ions implanted into chromium-doped semi-insulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect.
Abstract: The electrical behavior of zinc ions implanted into chromium-doped semiinsulating gallium arsenide was investigated by measurements of the sheet resistivity and Hall effect Room temperature implantations were performed using fluence values from 10 to the 12th to 10 to the 15th power/sq cm at 60 keV The samples were annealed for 30 minutes in a nitrogen atmosphere up to 800 C in steps of 200 C and the effect of this annealing on the Hall effect and sheet resistivity was studied at room temperature using the Van der Pauw technique The temperature dependence of sheet resistivity and mobility was measured from liquid nitrogen temperature to room temperature Finally, a measurement of the implanted profile was obtained using a layer removal technique combined with the Hall effect and sheet resistivity measurements
14 citations
TL;DR: In this paper, the electrical and optical properties of single crystals of Europium compounds were investigated using the van der Pauw technique, and the thermal activation energies observed were attributed to impurity effects.
11 citations
TL;DR: In this paper, the epitaxial vapor growth of gallium antimonide in the conventional closed tube process was studied by using polycrystalline gallium Antimonide as a source material.
7 citations
4 citations
01 Jan 1971
TL;DR: In this article, the authors used Van der Pauw Hall measurements and sheet resistivity to characterize the electrical properties of the implanted layer of nitrogen in silicon and determined the relative amount of amorphization through back-scattering measurements.
Abstract: Ion implantation of nitrogen in silicon has been studied at 28 °K and 283 °K. Van der Pauw Hall measurements and sheet resistivity have been used to characterize the electrical properties of the implanted layer. Low temperature implants produce an essentially total amorphous layer which upon annealing shows enhanced carrier concentrations. The relative amount of amorphization is determined through back-scattering measurements.