scispace - formally typeset
Search or ask a question

Showing papers on "Van der Pauw method published in 1972"


Journal ArticleDOI
TL;DR: In this article, it was shown that van der Pauw's method can be applied to any material, and that it always measures (ρ1ρ2)½, where ρ1 and ρ2 are the principal components of the resistivity tensor in the plane of the sample.
Abstract: Van der Pauw (1958) has described a method of measuring electrical resistivity in discs of arbitrary shape based on a theorem which is applicable to samples of isotropic material. In this paper the theorem has been shown to be applicable also to samples of anisotropic material, and it is shown that it measures the geometric mean of the principal components of the resistivity tensor in the plane of the sample. An isotropic body may be regarded as the special case of an anisotropic one in which the principal components of the resistivity tensor are all equal. It follows that van der Pauw's method may be applied to any material, and that it always measures (ρ1ρ2)½, where ρ1 and ρ2 are the principal components of the resistivity tensor in the plane of the sample.

47 citations


Journal ArticleDOI
TL;DR: In this paper, the authors examined the advantages and drawbacks of different growth methods for GaSe single crystals obtained from vapour phase by using the following growth methods: (1) iodine transport; (2) closed tube sublimation; (3) sublimations under a vapour pressure of one of the components; (4) open tube sub-limation.

35 citations


Journal ArticleDOI
TL;DR: Ion beam etching has been used, in conjunction with the Van der Pauw technique, to determine the electrical profiles of implanted dopants in silicon, the profiles being obtained much more rapidly than by using the more usual anodic stripping as discussed by the authors.
Abstract: Ion beam etching has been used, in conjunction with the Van der Pauw technique, to determine the electrical profiles of implanted dopants in silicon, the profiles being obtained much more rapidly than by using the more usual anodic stripping. The damage produced by the ion beam must be taken into account, and this involves a simple correction to the depth scale. Profiles obtained for 40 kV B+ implanted silicon, annealed at temperatures between 500 and 970 degrees C, are presented and briefly discussed.

10 citations


Journal ArticleDOI
TL;DR: In this paper, the variation of the transmitted amplitude ratio in ln[E(B)/E(0)] and its correlation with Faraday rotation were studied as a function of magnetic field in the Faraday configuration in a series of n and p-type germanium samples, (111 and (110) oriented, with resistivity lying in the range 30-1.5 Ω cm at 24.0 and 31.9 GHz at room temperature.
Abstract: The variation of the transmitted amplitude ratio in ln[E(B)/E(0)] and its correlation with Faraday rotation, i.e., (1/γ)ln[E(B)/E(0)] have been studied as a function of magnetic field in the Faraday configuration in a series of n‐ and p‐type germanium samples, (111) and (110) oriented, with resistivity lying in the range 30–1.5 Ω cm at 24.0 and 31.9 GHz at room temperature. From the measured data, the values of the Hall mobility and scattering parameter 〈τ3〉/〈τ2〉 〈τ〉 in the n‐type samples and the light‐hole mobility in the p‐type samples have been evaluated using the expressions of Furdyna and Brodwin. The values of the Hall mobility have been compared with the directly measured values by the van der Pauw technique.

5 citations