Showing papers on "Van der Pauw method published in 1974"
TL;DR: In this paper, the effect of voltage shorting due to current electrodes and current shorting caused by Hall electrodes on van der Pauw's resistivity and Hall coefficient measurement was investigated.
Abstract: Effects on van der Pauw's resistivity and Hall coefficient measurement due to finite size contacts with selected shapes on a square sample were investigated. For the sheet resistivity measurement, correction factors for the apparent measured values at zero magnetic field were determined from both electrolytic tank experiments and computerized over-relaxation calculations. For the Hall coefficient, correction factors for the effect of voltage shorting due to current electrodes and for the effect of current shorting due to Hall electrodes were calculated (by use of a fast-convergent over-relaxation technique) through a range of Hall angle from tan θ = 0·1–0·5. The current shorting contribution to the correction factor at zero magnetic field was also closely estimated by use of an electrolytic tank. In the symmetrical structures studied the Hall errors introduced by the voltage and current electrodes were approximately equal. The study shows that contacts of appreciable size relative to that of the sample can be a good approximation to van der Pauw's infinitesimal contact. Thus, one can utilize the simplicity and other advantages of finite size ohmic contacts for these measurements in normal semiconductor materials evaulation and still obtain precise data by using the appropriate correction factors determined in this paper.
189 citations
TL;DR: In this paper, closed tube sublimation and iodine assisted transport were used for the first time to obtain GaTe single crystals from the vapour phase by using two methods of growth.
16 citations
TL;DR: In this article, it was shown that low mobility values can also be obtained by van der Pauw measurements on samples containing certain types of radial inhomogeneities in the distribution of ionized impurities.
Abstract: Carrier mobility is often used to evaluate semiconductor material. A low value of mobility is generally construed to imply the presence of impurities or defects that adversely affect carrier transport. It is shown theoretically that low mobility values will also be obtained by van der Pauw measurements on samples containing certain types of radial inhomogeneities in the distribution of ionized impurities. The theoretical predictions have been confirmed by experiments on germanium slices cut from Czochralski‐grown crystals.
6 citations
TL;DR: In this article, it was shown that low mobility values can also be obtained by van der Pauw measurements on samples containing certain types of radial inhomogeneities in the distribution of ionized impurities.
Abstract: Carrier mobility is often used to evaluate semiconductor material. A low value of mobility is generally construed to imply the presence of impurities or defects that adversely affect carrier transport. It is shown theoretically that low mobility values will also be obtained by van der Pauw measurements on samples containing certain types of radial inhomogeneities in the distribution of ionized impurities. The theoretical predictions have been confirmed by experiments on germanium slices cut from Czochralski‐grown crystals.
1 citations