Showing papers on "Van der Pauw method published in 1979"
TL;DR: In this paper, a Si implanted with As (100 keV, 1015/cm2) was annealed with a scanning electron beam, and the results showed that the electrical activity of the e−beam-annealed samples is the same as for control samples subjected to either cw laser annealing or thermal annaling at 575 and 1000 °C, respectively, for 30 min each; recrystallization of the implanted layer as determined by MeV ion channeling and TEM measurements is complete.
Abstract: 〈100〉 Si implanted with As (100 keV, 1015/cm2) was annealed with a scanning electron beam. The principal results obtained were (1) the electrical activity of the e‐beam‐annealed samples is the same as for control samples subjected to either cw laser annealing or thermal annealing at 575 and 1000 °C, respectively, for 30 min each; (2) recrystallization of the implanted layer as determined by MeV ion channeling and TEM measurements is complete; (3) the electron distribution obtained by stripping and van der Pauw measurements indicates that no diffusion of the implanted atoms has occurred. The annealing is therefore essentially identical to that obtained with a scanning cw laser.
57 citations
TL;DR: In this article, a theory for the Greek cross, a Van der Pauw structure with contacts of finite lengths, is given and the potential problem has been solved by means of conformal transformations.
Abstract: A theory is given for the Greek cross, a special Van der Pauw structure with contacts of finite lengths. The potential problem has been solved by means of conformal transformations. Approximate formulae have also been derived.
44 citations
TL;DR: In this article, the difference in the two sets of results is due not to the differences in method, but to assumptions on the value of dielectric constant to be used when calculating the substrate polarization.
Abstract: Radically different methods of calculation by Lewin and by van der Pauw are compared. It is shown that the difference in the two sets of results is due not to the difference in method, but to assumptions on the value of dielectric constant to be used when calculating the substrate polarization. Curves show that differences of up to 30 percent can arise from this source, but the differences are much smaller for the larger values of dielectric constant.
29 citations
TL;DR: The incorporation of 75As into substitutional lattice sites in silicon in excess of 1021 cm−3 was reported by both a scanned cw e−beam and a scanned Cw laser operating with dwell times in the range of milliseconds as mentioned in this paper.
Abstract: The incorporation of 75As into substitutional lattice sites in silicon in excess of 1021 cm−3 is reported This has been accomplished by both a scanned cw e‐beam and a scanned cw laser operating with dwell times in the range of milliseconds Both electron concentration (using differential van der Pauw) and atom location measurements (using MeV ion channeling) are reported Standard thermal processing indicates that these layers are metastable
25 citations
TL;DR: In this article, Mg ions were implanted in Cr•doped semi-insulating GaAs at 120 keV to doses of 3×1012 to 1×1015/cm2 at room temperature.
Abstract: Mg ions were implanted in Cr‐doped semi‐insulating GaAs at 120 keV to doses of 3×1012 to 1×1015/cm2 at room temperature. Surface‐carrier concentrations and mobilities have been measured at various postimplantation anneal temperatures using the van der Pauw Hall‐effect/sheet‐resistivity technique. Detailed profiles of depth as a function of ion dose and anneal temperature are presented. Also, the results of a study of the integrated intensity of Mg emission at various annealing temperatures and of depth profiles of the relative emission intensity of the ions obtained by the photoluminescence method are compared with results obtained from electrical measurements. In addition, compensation‐level analysis and a comparison of theoretical diffusion profiles with depth‐profile data have been made. p‐type layers have been produced for all except the lowest dose of 3×1012/cm2 after capping only (no postimplantation annealing) with pyrolytic Si3N4 encapsulants. Subsequent annealing up to 600 °C does not alter the e...
20 citations
TL;DR: In this article, the authors measured the energy levels of selenium in silicon by fitting the theoretical carrier concentration versus temperature equation for semiconductors containing both double donors and acceptors to the experimental curve obtained from the Hall coefficient.
Abstract: The energy levels of selenium in silicon have been measured by fitting the theoretical carrier concentration versus temperature equation for semiconductors containing both double donors and acceptors to the experimental curve obtained from the Hall coefficient. The resistivity and Hall coefficient were measured by the van der Pauw method for samples diffused at 1100–1200°C for 68–168 hours. Selenium in silicon is a double donor impurity with energy levels of 0.26 and 0.50 eV below the conduction band edge. The ratios of the state degeneracies of neutral and singly ionized selenium centers, γ1, and of singly and doubly ionized selenium centers, γ2, are found to be 1/2 and 2 respectively. Selenium in silicon may be thought of as the analogue of a helium-like center in silicon.
10 citations
TL;DR: In this paper, a series of GaSe single crystals have been grown by the iodine vapour transport technique in the same experimental conditions, with different iodine concentrations in the growth ampoule, and the electrical characteristics of some samples have been measured for each growth run, together with the behaviour of resistivity as a function of temperature.
8 citations
TL;DR: In this paper, the van der Pauw technique was employed in order to study the electrical resistivity of the films and a dislocation density of about 106 cm−2 was evidenced for all explored compositions.