Showing papers on "Van der Pauw method published in 1985"
TL;DR: In this paper, the van der Pauw method has been used to measure the properties of ZnSe p-n junctions and showed that the value of n in the I-V characteristics ranges from 14 to 18 and the diffusion potential is between 25 and 27 eV.
Abstract: Pure blue light emission has been obtained from ZnSe p‐n junctions ZnSe crystals are grown by the temperature difference solution growth method under controlled vapor pressure A p‐type ZnSe crystal can be grown from Se solution by doping with a group I element under controlled Zn pressure The properties of p‐type crystals have been measured by the van der Pauw method A p‐n junction has been made by the formation of the n‐type layer by Ga diffusion into the p‐type crystal The fundamental properties of the p‐n junctions are as follows: the value of n in the I‐V characteristics ranges from 14 to 18 and the diffusion potential is between 25 and 27 eV The emission spectrum from the p‐n junction depends on the vapor pressure during growth and blue light emission is obtained with optimum pressure The wavelength of the main emission peak is 460 nm at 77 °K and 480 nm at 300 °K The brightness is 2 mcd at 2 mA
106 citations
TL;DR: In this paper, the authors investigated the properties of boron fluoride (BF+2 and BF+3) embedded silicon using cross-section and plan-view electron microscopy.
Abstract: Characteristics of rapid thermal and pulsed laser annealing have been investigated in boron fluoride‐ (BF+2 and BF+3) ‐implanted silicon using cross‐section and plan‐view electron microscopy. The amorphous layers recrystallize by the solid‐phase‐epitaxial growth process, while the dislocation loops below the amorphous layers coarsen and evolve into a network of dislocations. The dislocations in this band getter fluorine and fluorine bubbles associated with dislocations are frequently observed. The secondary‐ion mass spectrometry techniques were used to study concomitant boron and fluorine redistributions. The as‐implanted Gaussian boron profile broadens as a function of time and temperature of annealing. However, the fluorine concentration peak is observed to be associated with dislocation band, and the peak grows with increasing time and temperature of annealing. The electrical properties were investigated using van der Pauw measurements. The electrical activation of better than 90% and good Hall mobilit...
50 citations
TL;DR: In this article, the van der Pauw method was used microscopically to investigate the effect of dislocations on the sheet carrier concentration of Si-implanted and annealed GaAs.
Abstract: The quantitative effect of dislocations on the sheet carrier concentration of a Si-implanted and annealed layer in semi-insulating GaAs is investigated microscopically by the van der Pauw method using small Hall chips with a 40×40 µm2 measurement area. Dislocations affect the sheet carrier concentration within about a 75 µm radius area, and the carrier concentration increases 3×1015 cm-3 per dislocation in this area.
32 citations
TL;DR: The van der Pauw technique was used to measure the electrical resistivity of the samples at temperatures between 4.2 and 300 K and the Hall coefficient at room temperature and the Drude parameters obtained are in good agreement with those obtained from the optical data.
Abstract: Optical and electrical properties are reported for single-crystalline ${\mathrm{ZrC}}_{0.89}$. The specular reflectance was measured between 0.025 and 6.5 eV, and ellipsometry measurements were made between 1.2 and 4.5 eV. The combination of ellipsometry with reflectance allows optical functions to be computed reliably between 0 and 6.5 eV and also provides a check on the consistency of the measurements. The van der Pauw technique was used to measure the electrical resistivity of the samples at temperatures between 4.2 and 300 K and the Hall coefficient at room temperature. Drude parameters obtained from the electrical measurements are in good agreement with those obtained from the optical data. Both the optical and electrical results are compared to other experimental results and to theory.
32 citations
TL;DR: In this paper, two types of Schottky barrier diodes, i.e., n−BP-Sb and p-BP-Au, were fabricated and the n-BP−Sb diode has the highest reverse voltage of 5 V and a barrier height of 1.4 eV while those of the p−BP−Au diode are 1 V and 1.2 eV.
Abstract: Thick, single crystalline boron phosphide (BP) wafers (∼200–300 μm) grown by the chemical vapor deposition technique were characterized by the measurements of lattice constants by the Bond method and electrical properties by the Van der Pauw method. Two types of Schottky barrier diodes, i.e., n‐BP‐Sb and p‐BP‐Au, were fabricated. The n‐BP‐Sb diode has the highest reverse voltage of 5 V and a barrier height of 1.4 eV, while those of the p‐BP‐Au diode are 1 V and 1.2 eV. These results suggest that device application of BP is promising.
30 citations
PARC1
TL;DR: In this article, the electrical and structural properties of ZnSe films have been studied using a van der Pauw technique and high-resolution transmission electron microscopy, and the observed properties are best described in terms of extended defects and grain boundaries.
Abstract: ZnSe films have been grown on 〈100〉, 〈110〉, and 〈111〉B GaAs surfaces, using the metalorganic chemical vapor deposition technique. The electrical transport properties and lattice structure characteristics of these films have been studied using a van der Pauw technique and high‐resolution transmission electron microscopy. The electrical and structural properties of these films vary significantly with growth direction. In (100) layers, the observed defects are similar in nature to isolated compensated centers. For other orientations, observed properties are best described in terms of extended defects and grain boundaries.
27 citations
TL;DR: In this article, the annealing of the implantation damage has been studied with Van der Pauw and Hall measurements, and it is concluded that lattice damage reduces the mobility only for annaling temperatures below 600°C.
Abstract: Buried layers of boron in silicon have been made by 1 MeV implantations up to a dose of 1013 cm−2. The annealing of the implantation damage has been studied with Van der Pauw and Hall measurements. It is concluded that lattice damage reduces the mobility only for annealing temperatures below 600°C. The average mobilities measured after annealing at temperatures above 600°C correspond accurately to the values calculated from the most recent literature data, based on scattering by the lattice and by the active impurities. Complete activation was obtained after 60 min annealing at 700°C.
13 citations
TL;DR: In this article, a series of GaSxSe1−x solid solutions have been investigated by using space-charge-limited current and thermally stimulated current measurements, and three well-defined electron traps have been found, the energy depth of which varies continuously from GaSe to GaS.
Abstract: Systematic investigations of trapping centers parameters have been carried out on the complete series of GaSxSe1−x solid solutions by using space‐charge‐limited‐current and thermally stimulated current measurements. Crystals have been grown from the vapor by means of the iodine‐assisted transport method by varying the sulphur percentage x in steps of 0.1. Electron mobility, resistivity, and electron concentration have been carried out at room temperature by means of the Van der Pauw method, with the current flowing along the layers. Three well‐defined electron traps have been found, the energy depth of which varies continuously from GaSe to GaS.
12 citations
TL;DR: In this paper, the authors studied the spectral response of the photoconductivity of copper sulphide polycrystalline films obtained by thermal evaporation and determined the phase content of the samples by electron diffraction and the stoichiometry by potentiostatic methods.
9 citations
TL;DR: In this paper, the spreading resistance and temperature dependent Van der Pauw measurements provided evidence of the nonhomogeneity of resistivity, electron mobility and scattering mechanism in silicon on insulator films obtained by oxygen implantation.
Abstract: Spreading resistance and temperature dependent Van der Pauw measurements provide evidence of the non-homogeneity of resistivity, electron mobility and scattering mechanism in silicon on insulator films obtained by oxygen implantation. The oxygen content of this material is also responsible for substantial thermal donor activity. Original results on MOS transistors, the channels of which are situated either at the front interface or near the buried oxide, illustrate the dissymmetry between these interfaces.
8 citations
TL;DR: A pulsed electron beam of 10 µs FWHM has been successfully applied to anneal phosphorus-implanted CdTe as mentioned in this paper, achieving a p-type carrier concentration as high as 3 × 1018cm-3.
Abstract: A pulsed electron beam of 10 µs FWHM has been successfully applied to anneal phosphorus-implanted CdTe. The sheet resistance drops to 6.3 × 102Ω/ from nearly infinite for the As-implanted wafers as the irradiation intensity exceeds 9.2 J/cm2. A p-type carrier concentration as high as 3 × 1018cm-3has been reached as measured by the van der Pauw and Hall techniques.
TL;DR: In this paper, the growth conditions under which Germanium-type dopants are obtained with heavy Ge fluxes during MBE GaAs growth on GaAs substrates at 570°C were investigated.
Abstract: Germanium is normally an n‐type dopant in MBE GaAs but compensation and p‐type action has been observed under certain conditions. Studies have been made of the growth conditions under which p+ and n+ layers are obtained with heavy Ge fluxes during MBE GaAs growth on GaAs substrates at 570 °C. Both p+ and n+ dopings in excess of 1020 cm−3 have been observed. The production of p‐type layers is favored by As4/Ga ratios of 2–3:1 and high Ge fluxes. For As4/Ga ratios of 4–5:1 and Ge fluxes corresponding to dopings of the order of mid‐1018 cm−3 or less, the layers grown are n‐type. For As4/Ga ratios greater than 6:1, the layers may be n+ type with concentrations that are 1020 cm−3 or higher as given by capacitance measurements or van der Pauw measurements. Photoluminescence studies at 4 K for 1020 cm−3 doped layers show a broadband with a maximum at 1.27–1.33 eV for n+ layers, and for p+ layers a broadband luminescence with evidence of peaking at about 1.38 and 1.35 eV. Transmission electron microscope stu...
TL;DR: In this article, the influence of melt composition on uniformity of resistivity and mobility in semi-insulating, undoped GaAs grown by liquid encapsulated Czochralski technique was investigated in detail.
Abstract: Influence of melt composition on uniformity of resistivity and mobility in semi-insulating, undoped GaAs grown by liquid encapsulated Czochralski technique was investigated in detail. Microscopic two-dimensional resistivity distribution was measured using the three-electrode guard method, and Hall mobility was measured by the van der Pauw method. Relatively uniform, four fold symmetric resistivity distribution was observed in crystals grown from stoichiometric or slightly As-rich melt, whereas very significant fluctuations in resistivity were found in crystals grown from Ga-rich or heavily As-rich melt. High and rekatively uniform mobility along both axial and radial directions is obtained at near stoichiometric melt compositions.
TL;DR: In this article, an automated, ac galvanomagnetic measurement system is described, and procedures to validate sample installation and correct operation of other system functions, such as magnetic field and thermometry, are discussed.
Abstract: An automated, ac galvanomagnetic measurement system is described. Hall or van der Pauw measurements in the temperature range 10–300 K can be made at a preselected magnetic field without operator attendance. Procedures to validate sample installation and correct operation of other system functions, such as magnetic field and thermometry, are included. Advantages of ac measurements are discussed.
Patent•
12 Aug 1985
TL;DR: In this paper, the authors measured the effective channel length and the easy inspection by means of an inspection instrument such as a tester by measuring dimensions from the measurement result of layer resistance value of a test pattern section, the length of a diffused resistance layer, and the resistance value.
Abstract: PURPOSE:To enable the determination of the effective channel length and the easy inspection by means of an inspection instrument such as a tester by measuring dimensions from the measurement result of layer resistance value of a test pattern section, the length of a diffused resistance layer, and the resistance value. CONSTITUTION:The titled device is made of the section of Van der pauw pattern to obtain the layer resistance Rs of a diffused layer and the bridge section to obtain the length of the diffused layer. Van der pauw pattern electrodes 11, 12, 13, and 14 are connected to the diffused layer 16 each through a contact part 15. The voltage Vs generating between the electrodes 11 and 14 is measured by passing a current Is between the electrodes 12 and 13. The electrodes 14, 17, 18, and 19 are bridge circuit electrodes to measure the diffusion length GD of the diffused layer 22 formed in a semiconductor substrate part sandwiched between gate materials 20 and 21. The voltage VB between the electrodes 17 and 18 is measured by passing a current IB between the electrode 14 and 19. The effective length LFE is obtained by subtracting Gd from the constant.
TL;DR: In this article, the electrical conductivity, Hall mobility and Hall coefficient of crystalline germanium films, vacuum-deposited on to heated glass microscope slides, were measured at temperatures varying between 77 K and 400 K using the Van der Pauw technique.
Abstract: The electrical conductivity, Hall mobility and the Hall coefficient of crystalline germanium films, vacuum-deposited on to heated glass microscope slides, were measured at temperatures varying between 77 K and 400 K using the Van der Pauw technique. Factors responsible for the growth of thin films and their characterization are discussed. The films were found to be p-type, having negative temperature coefficient of resistance, although the starting material was high-purity germanium. On the basis of experimentation, it is shown that the Hall mobility, the Hall coefficient and the electrical conductivity increase with an increase in the thickness of the film and also with an increase in the measurement temperature.
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IBM1
TL;DR: In this article, a two-step growth process of Si MBE was used to grow epitaxial layers of high quality, and an electron mobility of 1300 cm 2 V -1 s -1 was obtained by van der Pauw measurements.
Abstract: 100 μm-wide silicon-on-insulator (SOI) structures have been accomplished by utilizing silicon molecular beam epitaxial (Si-MBE) growth on porous silicon anid subsequent lateral-enhanced oxidation of porous silicon through pattern widows. A silicon beam method was used for insitu cleaning of Si surface at 750°C, and the effectiveness of this method was demonstrated by Auger electron spectroscopy and checked by the etch-pit density of the grown film. A two-step growth process of Si MBE was used to grow epitaxial layers of high quality. An electron mobility of 1300 cm 2 V -1 s -1 was obtained by van der Pauw measurements.
01 Mar 1985
TL;DR: In this paper, the van der Pauw dual technique is used to perform in situ Hall-effect measurements on short-channel GaAs field-effect transistors (GaAs FETs).
Abstract: The van der Pauw dual technique is used to perform in situ Hall-effect measurements on short-channel GaAs field-effect transistors (GaAs FETs). The technique is briefly described and some practical and theoretical problems associated with this technique are discussed.
TL;DR: In this article, the authors used the standard Van der Pauw technique to obtain the Hall mobility and field effect mobility on PbTe films of different thickness grown on KCl (100) substrates by the hot wall epitaxy (HWE) technique.