Showing papers on "Van der Pauw method published in 2009"

Comparison of epitaxial graphene on Si-face and C-face 4H SiC formed by ultrahigh vacuum and RF furnace production.

Abstract: We present X-ray photoelectron spectroscopy, van der Pauw Hall mobilities, low-temperature far-infrared magneto transmission (FIR-MT), and atomic force microscopy (AFM) results from graphene films produced by radiative heating in an ultrahigh vacuum (UHV) chamber or produced by radio frequency (RF) furnace annealing in a high vacuum chemical vapor deposition system on Si- and C-face 4H SiC substrates at 1200−1600 °C. Although the vacuum level and heating methods are different, graphene films produced by the two methods are chemically similar with the RF furnace annealing typically producing thicker graphene films than UHV. We observe, however, that the formation of graphene on the two faces is different with the thicker graphene films on the C-face RF samples having higher mobility. The FIR-MT showed a 0(−1) → 1(0) Landau level transition with a √B dependence and a line width consistent with a Dirac fermion with a mobility >250 000 cm2·V−1·s−1 at 4.2 K in a C-face RF sample having a Hall-effect carrier mo...

Modeling and experiments on diffusion and activation of phosphorus in germanium

Abstract: We report on phosphorus diffusion and activation related phenomena in germanium. We have used both conventional thermal processing and laser annealing by pulsed nanosecond Nd:YAG laser. Chemical profiles were obtained by secondary-ion-mass spectroscopy, sheet resistance was estimated by the van der Pauw method, and structural defects were monitored by transmission electron microscopy. Our study covers the temperature range from 440 to 750 °C, and we were able to efficiently simulate the dopant profiles within that temperature range, taking into account a quadratic dependence of the P diffusion coefficient on the free electron concentration. To achieve that we have taken into account dopant activation dependence on temperature as well as dopant pile-up near the surface and dopant loss owing to outdiffusion during the annealing. A combined laser thermal treatment above the melting threshold prior to conventional annealing allowed the elimination of the implantation damage, so we could perceive the influence...

Weak localization and mobility in ZnO nanostructures

Abstract: We conduct a comprehensive investigation into the electronic and magnetotransport properties of ZnO nanoplates grown concurrently with ZnO nanowires by the vapor-liquid-solid method We present magnetoresistance data showing weak localization in our nanoplates and probe its dependence on temperature and carrier concentration We measure phase coherence lengths of 50-100 nm at 19 K and, because we do not observe spin-orbit scattering through antilocalization, suggest that ZnO nanostructures may be promising for further spintronic study We then proceed to study the effect of weak localization on electron mobility using four-terminal van der Pauw resistivity and Hall measurements versus temperature and carrier concentration We report an electron mobility of -100 cm 2 /V s at 275 K, comparable to what is observed in ZnO thin films We compare Hall mobility to field-effect mobility, which is more commonly reported in studies on ZnO nanowires and find that field-effect mobility tends to overestimate Hall mobility by a factor of 2 in our devices Finally, we comment on temperature-dependent hysteresis observed during transconductance measurements and its relationship to mobile, positively charged Zn interstitial impurities

High-Temperature Hydration and Conductivity of Mayenite, Ca12Al14O33

Abstract: Mayenite, Ca12Al14O33, has been synthesized by a citric acid route, with final sintering at 1200−1350 °C. Phase purity has been characterized by X-ray diffraction and scanning electron microscopy. The hydration has been investigated under oxidizing and reducing conditions using thermogravimetry versus T and pH2O, as well as in situ H2O/D2O isotope exchange. The two data sets are in general correspondence and yield standard entropy and enthalpy changes of hydration (for 1 mol of H2O) of −123 ± 10 J/mol K and −240 ± 16 kJ/mol, respectively, in overall agreement with previous literature. The ac conductivity of sintered disks has been measured by the 4-point van der Pauw method versus pO2 at 900−1200 °C. It reflects mainly n-type electronic conductivity under reducing conditions and ionic (mainly oxide ion) conductivity under oxidizing conditions. The conductivity contributions are modeled and discussed in terms of a defect model involving partial occupancy by oxide ions and hydroxide ions of the structural s...

van der Pauw method for measuring resistivity of a plane sample with distant boundaries.

Abstract: In the paper, we derive an algorithm which follows from the original van der Pauw's technique for measuring resistivity with the added advantage of allowing contacts to be positioned a distance away from the boundary. For a large sample area, we show that the resistivity calculated by our algorithm is equivalent to the resistivity calculated by the original van der Pauw's method. In practice, this configuration is easier to achieve and can eliminate errors associated with contacts that are not placed exactly at the edge.

Electronic transport properties of Ti-impurity band in Si

Abstract: In this paper we show that pulsed laser melted high dose implantation of Ti in Si, above the Mott transition, produces an impurity band (IB) in this semiconductor. Using the van der Pauw method and Hall effect measurements we find strong laminated conductivity at the implanted layer and a temperature dependent decoupling between the Ti implanted layer (TIL) and the substrate. The conduction mechanism from the TIL to the substrate shows blocking characteristics that could be well explained through IB theory. Using the ATLAS code we can estimate the energetic position of the IB at 0.36 eV from the conduction band, the density of holes in this band which is closely related to the Ti atomic density and the hole mobility in this band. Band diagrams of the structure at low and high temperatures are also simulated in the ATLAS framework. The simulation obtained is fully coherent with experimental results.

WC/a-C nanocomposite thin films: Optical and electrical properties

Abstract: WC/amorphous carbon (a-C) thin films were deposited by dual magnetron sputtering from individual WC and graphite targets. The influence of film composition and microstructure on the optical and electrical properties was investigated. As evidenced by x-ray photoelectron spectroscopy and grazing angle x-ray diffraction measurements, the WC/a-C films are composite materials made of hexagonal W2C and/or cubic beta-WC1-X nanocrystallites embedded in (a-C) matrix. The optical properties were studied by spectroscopic ellipsometry and the electrical resistivity was measured by the van der Pauw method between 20 and 300 K. Both the optical and the electrical properties of the WC/a-C films are correlated with the chemical composition and microstructure evolution caused by a-C addition. The optical properties of W2C/a-C and beta-WC1-x/a-C films with a-C content <= 10 at. % are explained by modeling their dielectric functions by a set of Drude-Lorentz oscillators. Further increase in a-C content leads only to the formation of beta-WC1-x/a-C nanocomposite structures and their optical properties progressively evolve to those of a-C single phase. The electrical resistivity as a function of the temperature of all the films exhibits a negative temperature coefficient of resistivity. Theoretical fitting using the grain-boundary scattering model shows that the transport properties are mainly limited by the grain size and electron mean free path parameters.

Properties of Au nanolayers on polyethyleneterephthalate and polytetrafluoroethylene

Abstract: Gold nanolayers deposited by sputtering on polytetrafluoroethylene (PTFE) and polyethyleneterephthalate (PET) films were studied in this work. The influence of sputtering time on the layer thickness, surface morphology and roughness was determined by various methods (i.e. atomic absorption spectroscopy, focused ion beam and scanning electron microscopy). Sheet resistance and concentration and mobility of free charge carriers in Au nanolayers were determined using the Van der Pauw method. Surface morphology was determined using atomic force microscopy (AFM). After gold deposition on PET, the surface roughness increases and the surface morphology changes in contrast with PTFE coated under the same conditions. With the increasing sputtering time, the layer resistance decreases rapidly for both polymer substrates. Electrically continuous coverage is achieved for the gold layer with an average thickness of ca 4 nm for PET and ca 5 nm for PTFE. Continuous layers on both polymers exhibit the same concentration of free charge carriers. Lower mobility of the charge carriers was found on rougher Au/PTFE. Copyright © 2009 John Wiley & Sons, Ltd.

Electrical and structural characterizations of BGaN thin films grown by metal‐organic vapor‐phase epitaxy

Abstract: In this report, the electrical and structural properties of BGaN thin films, with boron composition up to 2%, have been investigated. The resistivity, Hall mobility and carrier concentration were measured by the van der Pauw/Hall Effect technique, using annealed indium ohmic contacts. The current-voltage measurements between two planar gold and titanium/aluminum electrodes were performed. To analyze the structural properties, the polarized Raman spectra were measured with a micro-Raman spectrometer. The resistivity displays a strong increase with respect to the boron composition in BGaN alloy, directly related to the decrease of the n-type carrier concentration, while the mobility increases with boron content, well correlated to the structural measurements showing a good crystalline quality of the BGaN layers. This boron-controlled resistivity is very promising for using the BGaN based materials in microelectronic and optoelectronic devices. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Defects and transport in Gd-doped BaPrO3

Abstract: The electrical conductivity of BaPr1−x GdxO3−δ has been characterized by means of the four-point van der Pauw technique at 200–1100 °C as a function of pO2 and pH2O. The contributions from ionic charge carriers were investigated by the EMF of concentration cells and the H+/D+ isotope effect on the total conductivity. BaPr1−x Gd x O3−δ is predominately a p-type electronic conductor under oxidizing conditions, while ionic conduction is barely measurable. Gd(III) substituted for Pr(IV) is charge compensated mainly by electron holes, with protons and oxygen vacancies contributing significantly but as minority defects only at low temperatures (wet conditions) and at high temperatures, respectively. The conductivity behaviour has been modelled under these assumptions to extract thermodynamic parameters for the defect reactions at play. The practical use of this material is limited by its poor chemical stability.

Thermostat for high temperature and transient characterization of thin film thermoelectric materials.

Abstract: We have designed and fabricated a vacuum-insulated thermostat capable of measuring the thermoelectric properties of thin films from room temperature to 850 K. High speed Seebeck voltage transients are resolved to 200 ns with 63 dB dynamic range in order to directly measure thermoelectric device figure of merit. In-plane Seebeck coefficient probes measure voltage and temperature difference at identical locations with low parasitic contributions. In-plane electrical conductivity measurement is accomplished at high speed to avoid possible Seebeck voltage effect on van der Pauw measurements.

Chemical sensors and methods for making and using the same

Abstract: A van der Pauw (VDP) sensor comprising an electronic circuit electrically coupled to a surface, the surface comprising a type III-V material, and the electronic circuit measuring a sheet resistivity of the surface using a VDP technique. The VDP sensor may further comprise a macromolecule, such as a porphyrin, an oligonucleotide, a protein, a polymer or a combination thereof in contact with the surface. The VDP sensors may be arranged in an array of similar or different sensors. An electronic circuit electrically coupled to a type III-V material having a two-dimensional electron gas, such as InAs or InN, the electronic circuit measuring an electrical property of the type III-V material having a two-dimensional electron gas.

Physical properties of V2O5 sprayed films

Abstract: Thin films of V 2 O 5 have been deposited by spray pyrolysis technique on glasses substrate with different solution concentrations (molarities) at temperature equal 300 °C. The structural, electrical and optical characteristics of the V 2 O 5 films were examined by X-ray diffraction (XRD), Van der Pauw technique and double-beam spectrophotometry. X-ray diffraction reveals that the films, which have been deposited at T S = 300 °C with different solution molarities are polycrystalline in nature having orthorhombic type crystal structure and a preferential orientation along direction. The electrical resistivity at room temperature is decreased as the solution molarity increased. Transmission measurements showed that the transmission decreased as the molarity increased. The dependence of the refractive index, n, and extinction coefficient, k, on the wavelength for a sprayed film is also reported. Optical bandgap, Eg, has been reported for the V 2 O 5 films and is equal to 2.50 eV.

Electrical behavior of free-standing porous silicon layers

Abstract: The electrical behavior of porous silicon (PS) layers has been investigated on one side of p-type silicon with various anodization currents and electrolytes. The two contact I–V characteristic is assigned by the metal/porous silicon rectifying interface, whereas, by using the van der Pauw technique, a nonlinear dependence of the current vs voltage was found. By using Dimethylformamide (DMF) in electrolyte, regular structures and columns were formed and porosity increased. Our results showed that by using DMF, surface resistivity of PS samples increased and became double for free-standing porous silicon (FPS). The reason could be due to increasing surface area and adsorbing some more gas molecules. Activation energy of PS samples was also increased from 0.31 to 0.34 eV and became 0.35 eV for FPS. The changes induced by storage are attributed to the oxidation process of the internal surface of free-standing porous silicon layers.

Charge carrier removal rates in n-type silicon and silicon carbide subjected to electron and proton irradiation

Abstract: In contrast to irradiated Si, the information on removal rates of charge carriers in irradiated SiC is meager and often contradictory. This is due to serious difficulties in crystal growth which, in turn, may have a profound effect on properties of initial materials. In the present work we compare the influence of electron (≈1 MeV) and proton (8, 15 MeV) irradiation on float-zone Si (FZ-Si) and 4H-SiC (CVD). Electrical measurements were carried out with the help of the Van der Pauw technique and capacitance−voltage technique at 1 kHz for FZ-Si and SiC, correspondingly.

Studies on Physical Properties and Carrier Conversion of SnO2:Nd Thin Films

Abstract: Neodymium (Nd)-doped SnO2 transparent conducting oxide thin films were prepared by vapour deposition technique under different deposition parameters: substrate temperature, time and flow rate of vapour deposition, amount of base material, distance between the substrate and spray gun tip, and dopant (Nd) concentration. The structural, optical, electrical and photo-electronic properties of the doped and undoped SnO2 films were studied. X-ray diffraction studies shows the polycrystalline nature of the films with preferential orientation along the (101), (211) and (301) planes and an average grain size of 100 A. The optical properties of these films were studied by measuring their optical transmission spectra in the UV-VIS-NIR range. Optical transmission is found to increase with Nd doping. Band gap, refractive index and thickness of the films were calculated. Its electrical properties were determined using four probe, Van der Pauw and Hall probe methods. On doping with Nd+3, carrier conversion takes place from n-type to p-type; p-conductivity dominates. The resistivity of SnO2 films changes from 91.9 \times 10-4 W m to 1.073 \times 10-4W m as the substrate temperature varied 400--575 °C; and resistivity decreases initially on doping and increases as doping concentration increases. The minimum resistivity for the doped SnO2 films was found to be 0.556 \times 10-4 W m at the deposition temperature 575 °C with 1 wt% concentration of the dopant. Photoconductivity and photovoltaic effects of doped SnO2 films were also studied.

Experimental and theoretical study of the thermal solubility of the vacancy in germanium

Abstract: Quenching experiments are performed using state of the art p-type Czochralski-grown Ge samples. The vacancy formation energy and thermal equilibrium concentration are determined on the basis of resistivity changes measured after quenching, using van der Pauw and Hall measurements. The results are compared with previously published experimental data and with results from analytical and ab initio calculations of the formation energy of the vacancy in different charge states. The deep levels introduced during the quenching step are studied with deep level transient spectroscopy and with FTIR, revealing besides the typical quenching related defects which are probably connected with vacancies also the presence of Cu.

NOR-Type Nonvolatile Ferroelectric-Gate Memory Cell Using Composite Oxide Technology

Abstract: We fabricated a NOR-type memory cell composed of a ferroelectric-gate thin-film transistor (FeTFT) and an insulated gate thin-film transistor (TFT), which were a memory element and a select switch, respectively. The FeTFT consisted of a heteroepitaxially stacked oxide structure of ZnO (n-type semiconductor)/Pb(Zr,Ti)O3 (PZT; ferroelectric)/SrRuO3 (bottom-gate electrode) on a SrTiO3 substrate. An insulated gate stack of Au/Ti (top-gate electrode)/SiNx (insulator) was formed on the ZnO film. The drain electrode of the FeTFT was common to the source electrode of the TFT. The current–voltage (Ids–Vgs) characteristics of the FeTFT exhibited a high ON/OFF ratio of 105 by applying sweeping bottom-gate voltages (Vgs) from -10 to 10 V. After the removal of gate bias, the ON and OFF states were preserved by the remnant polarization of the ferroelectric film. Moreover, the current–voltage characteristics of the TFT exhibited an ON/OFF ratio of 105. The field effect mobility of the TFT was estimated to be 25 cm2 V-1 s-1, which corresponded to an electron mobility of 26 cm2 V-1 s-1 measured for the ZnO film by a van der Pauw method. However, the field effect mobility of the FeTFT, typically 0.1 cm2 V-1 s-1, was quite different from those values. The difference in field effect mobility was attributed to whether current flowed along the ZnO/PZT or SiNx/ZnO interface. We also confirmed the write and read operations of the memory cell using pulse sequences.

A novel phenomenon: p-Type ZnO:Al films deposited on n-Si substrate

Abstract: Al-doped p-type ZnO thin films were fabricated by RF magnetron sputtering on n-Si (1 0 0) and homo-buffer layers in pure ambient oxygen. ZnO ceramic mixed with 2 wt% Al2O3 was selected as a sputtering target. XRD spectra show that the Al-doped ZnO thin films have a ZnO crystal structure. Hall Effect experiments with Van der Pauw configuration show that p-type carrier concentrations are arranged from 1.66×1016 to 4.04×1018 cm−3, mobilities from 0.194 to 11.1 cm2 V−1 s−1 and resistivities from 0.999 to 18.4 Ωcm. Field emission scanning electron microscopy (FESEM) cross-section images of different parts of a p-type ZnO:Al thin film annealed at 800 °C show a compact structure. Measurement of the same sample shows that density is 5.40 cm−3, smaller than the theoretically calculated value of 5.67 cm−3. Photoluminescence (PL) spectra at 10 K show a shoulder peak of p-type ZnO film at about 3.117 eV ascribed to electron transition from donor level to acceptor level (DAP).

MeV Si ion beam modification effects on the thermoelectric generator from Er0.1Fe1.9SbGe0.4 thin film

Abstract: Effective thermoelectric materials and devices have a low thermal conductivity and a high electrical conductivity. The performance of the thermoelectric materials and devices is shown by a dimensionless figure of merit, ZT. The purpose of this study is to improve the figure of merit of the single layer of Er 0.1 Fe 1.9 SbGe 0.4 thin film used as thermoelectric generators. We have deposited the monolayer of Er 0.1 Fe 1.9 SbGe 0.4 thin film on silicon and silica substrates with thickness of 302 nm using ion beam assisted deposition (IBAD). Rutherford backscattering spectrometry (RBS) was used to determine the total film thickness and stoichiometry. The MeV Si ion bombardments were performed on single layer of Er 0.1 Fe 1.9 SbGe 0.4 thin films at five different fluences between 5 × 10 13 −5 × 10 15 ions/cm 2 .The defect and disorder in the lattice caused by ion beam modification and the grain boundaries of these nanoscale clusters increase phonon scattering and increase the chance of annihilation of the phonon. The increase of the electron density of states in the miniband of the quantum dot structure formed by bombardment also increases the Seebeck coefficient and the electrical conductivity. We measured the thermoelectric efficiency of the fabricated device by measuring the cross plane thermal conductivity by the 3rd harmonic (3 ω ) method, the cross plane Seebeck coefficient, and the electrical conductivity using the Van Der Pauw method before and after the MeV ion bombardments.

Non-destructive testing of a carbon-nanotube-reinforced composite using HTS-SQUID and electromagnetic techniques

Abstract: The correlation between electrical conductivity and magnetic field response, due to multi-walled carbon nanotubes' (MWCNTs) distribution within the polymer matrix, has been demonstrated using a contactless and non-destructive technique. Multi-walled carbon nanotubes, both buckypaper and reinforced epoxy matrix specimens with different nanotube percentages, have been inspected using the eddy current technique based on an HTc SQUID magnetometer. The SQUID magnetic field response, due to the nanotube distribution, has been compared with the thermographic technique results. Moreover, the electrical conductivity of nanotube-reinforced composites and buckypaper has been carried out by using the Van der Pauw method.

Characterizations of Ga-doped ZnO Films on Si (111) Prepared by Atmospheric Pressure Metal-organic Chemical Vapor Deposition

Abstract: Gallium-doped ZnO films were grown on p-Si(111) substrates by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using diethylzinc and water as reactant gases and triethyl gallium (TEG) as a n-type dopant gas. The structural, electrical, and optical properties of ZnO:Ga films obtained by varying the flow rate of TEG from 0.56to3.35μmol∕min were examined. X-ray diffraction patterns and scanning electron microscopy images indicated that Ga doping plays a role in forming microstructures in ZnO films. A flat surface with a predominant orientation (101) was obtained for the ZnO:Ga film fabricated at a flow rate of TEG=2.79μmol∕min. This film also revealed a lowest resistivity of 4.54×10−4Ωcm, as measured using the van der Pauw method. Moreover, low temperature photoluminescence (PL) emission recorded at 12K demonstrated the Burstein Moss shift of PL line from 3.365to3.403eV and a line broadening from 100to165meV as the TEG flow rate varied from 0.56to2.79μmol∕min. This blueshift behavior o...

Electrical and transport properties of nickel manganite obtained by Hall effect measurements

Abstract: Intrinsic resistivity and carrier transport parameters of sintered nickel manganite samples (NTC thermistor grade) were determined using a Hall effect measurement system based on the van der Pauw method. Powder mixtures composed of MnO, NiO and with small amounts of CoO and Fe2O3 were free surface energy activated by milling in an ultra fast planetary mill for 5, 15, 30, 45 and 60 min. The powders were uniaxially pressed with 196 MPa into discs and sintered at 1200 °C for 60 min. Full characterization of nickel manganite samples was done using SEM, EDS and XRD analysis. The Hall effect was measured at different temperatures (room temperature, 50, 80, 100 and 120 °C) with an applied field of 0.37 T and also 0.57 T at room temperature. The activation energy E a (energy of conduction) and the coefficient of temperature sensitivity B 25/80, were calculated from measured resistivity values. The measured mobility, resistivity/conductivity, U-I plots, and Hall coefficients were mutually compared and correlated versus microstructure development and macroscopic parameters such as the powder activation time and ambient temperature.

Magnetoresistance of a Polycrystalline InSb Disk with anEmbedded Au Core

Abstract: We have investigated the magnetoresistance (MR) of a polycrystalline indiumantimonide (InSb) van der Pauw (vdP) disk with an embedded concentric gold (Au) core. A polycrystalline InSb sample was prepared in a thermal evaporator. The size of the Au core embedded in a InSb disk with a constant 100-μm diameter varied from 0 to 70 μm. The MR of the devices with different Au size was measured in order to find the optimum Au size and the origin of the enhanced MR. The room temperature MR of the InSb vdP disk with a 70-μm Au inhomogeniety was 614% at 1 T, and 9,900% at 5 T. The MR significantly depended on the size of embedded Au. The results can be well understood by considering field dependent current deflection around the embedded Au core, which is called geometrical MR.

High-Sensitivity InAsSb Photoconductors with a Response Wavelength Range of 2–9 µm Operated at Room Temperature

Abstract: InAsSb immersion photoconductors with a response wavelength range of 2–9 µm operated at room temperature were reported. The detectors are based on InAsSb single crystals grown on InAs substrates by melt epitaxy (ME). Van der Pauw measurements showed that the 300 K electron mobilities of InAsSb materials are higher than 5×104 cm2 V-1 s-1 with carrier densities of (1–3)×1016 cm-3. The photoconductors were measured using a standard blackbody source at a temperature of 500 K and a modulation frequency of 800 Hz under an applied bias current of 10 mA. At 293 K, the blackbody detectivity Dbb* (500 K, 800) reaches (2–6)×108 cm Hz1/2 W-1, indicating the high sensitivity of the detectors and their potential detection applications.

The van der Pauw method of measurements in high-T-c superconductors

Abstract: Details on the transport measurements of high-Tc superconductors have been presented using the van der Pauw technique. Basic procedures to obtain good and reliable results in polycrystalline samples were discussed. The influence of heating rates and the direction of the applied magnetic field on the results of measurements has been examined. An unexpected nonzero transverse voltage at zero magnetic field was observed in the vicinity of the superconducting temperature transition (Tc). Measurements in two different magnetic field directions allowed one to calculate the symmetric and the asymmetric components of the Hall resistance. Those components were calculated for two different superconductor systems and analyzed in the framework of the recent theory about the longitudinal and transverse voltages in high-Tc superconductors.

Electrical conductivity of gelcast alumina sintered under inert atmosphere

Abstract: Electrically conductive alumina ceramic has been successfully fabricated by sintering of dried gelcast alumina in an inert atmosphere. The process was developed similar to the conventional gelcasting method except for varying the amount of monomer in the premix solution. The sintering treatment was carried out in argon gas from 1100 °C to 1700 °C. Van der Pauw's method was used to measure the electrical resistivity. The results showed that increasing monomer addition and sintering treatment were significantly affecting in lowering electrical resistance. Using the lowest monomer addition and increased sintering treatment, the measured electrical resistivities were in the range from 1.94 Ω-cm to 0.37 Ω-cm. The material exhibited ohmic behavior and rendered two regimes of Arrhenius profile in the plot of electrical conductivity against increasing temperature from 20 °C to 600 °C. All conduction processes were governed by the presence of carbon that caused the alumina grains in polygonal morphology typical of densification. Furthermore, physical tests were conducted to describe the electrical conduction behavior of the material.