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Van der Pauw method

About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.


Papers
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Journal ArticleDOI
TL;DR: A novel automatic multi-channel measurement system that can acquire the temperature coefficient of resistance (TCR) and the I – V characteristics of multi-layer thin films and a highly accurate resistance measurement method for characterizing the multi- layer thin films is developed.

14 citations

Journal ArticleDOI
TL;DR: In this paper, the authors used SIMS and Van der Pauw technique to study the doping behavior of GaSb grown by LP-MOCVD and showed that when the V/III reactant ratio decreased, Se incorporation was enhanced by one order of magnitude.

14 citations

Journal ArticleDOI
TL;DR: In this article, a pyrolysis of nickel acetylacetonate and lithium nickel acetonate was performed in the temperature range 350-420°C and the results showed that the amount of metal in the prepared thin films did not reflect the ratio of the metals in the precursor but was found to depend on the deposition temperature.
Abstract: Thin films of nickel oxide and lithium nickel oxide were deposited through the pyrolysis of nickel acetylacetonate and lithium nickel acetylacetonate, respectively in the temperature range 350–420 °C. The single solid source precursors, nickel acetylacetonate and lithium nickel acetylacetonate were prepared and characterized using Energy Dispersive X-Ray Fluorescence (EDXRF), X-Ray Diffraction (XRD) and infrared spectroscopy. The composition, optical and electrical properties of the prepared thin films were analysed using a variety of techniques, including, Rutherford Backscattering Spectroscopy (RBS), EDXRF, XRD, UV–Visible Spectrophotometry and van der Pauw conductivity method. The amount of metals in the prepared thin films did not reflect the ratio of the metals in the precursor but was found to depend on the deposition temperature. The energy gaps of the nickel oxide and lithium nickel oxide thin films are 3.7 and 3.2 eV, respectively. The electrical conductivity showed that lithium nickel oxide thin film has an activation energy of 0.11 eV. The conduction was explained by a hopping mechanism.

14 citations

Journal ArticleDOI
TL;DR: Pulsed electron beam annealing of phosphorus-implanted CuInS2 has been found to be an efficient method in p • type doping of CuIn S2 as discussed by the authors, and effective carrier concentration profiles have been determined with a maximum carrier concentration of 9×1019 cm−3.
Abstract: Pulsed electron beam annealing of phosphorus‐implanted CuInS2 has been found to be an efficient method in p‐type doping of CuInS2. A sheet resistance as low as 10.1 Ω/⧠, a sheet carrier concentration as high as 2.6×1016 cm−2, and a hole mobility as high as 499 cm2/V s have been obtained. The irradiation energy density for the best doping condition was determined to be in the range ∼11–13 J/cm2. Using Van der Pauw/Hall technique in conjunction with a chemical etching technique, effective carrier concentration profiles have been determined with a maximum carrier concentration of 9×1019 cm−3. Excellent p‐n CuInS2 homojunctions have been fabricated by electron beam pulse annealing with an ideality factor of 1.75.

14 citations

Journal ArticleDOI
TL;DR: In this paper, a new series of double perovskite oxides were synthesized by traditional solid state reaction method and characterized by X-ray diffraction, scanning electron microscope (SEM), energy dispersive x-ray (EDX), ac impedance and dc four point using Van Der Pauw method.

14 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202328
202241
202128
202030
201960
201867