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Van der Pauw method

About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.


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Journal ArticleDOI
TL;DR: In this article, the dependence of the two-point resistance on the electrode size, sample radius, and thickness was investigated both theoretically and experimentally, and an expression was given for the dependence on the twopoint resistance.
Abstract: Current‐voltage relations on circular samples with four equally spaced semicircle electrodes are investigated both theoretically and experimentally. An expression is given for the dependence of the two‐point resistance on the electrode size, sample radius, and thickness. Combining this with a four‐point van der Pauw conductivity measurement enables the determination of the electrode overpotential. Experimental results of the I‐V relations in a thin carbon layer are presented.

14 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of Fe content on the performance of a limiting current oxygen sensor with CaZr0.7Fe0.3O3 dense diffusion barrier and YSZ solid electrolyte was investigated.

14 citations

Journal ArticleDOI
TL;DR: In this article, the horizontal Bridgman (HB) technique has been used to grow 2-inch diameter Si-doped GaAs crystals with a carrier concentration of 1.7-2.0 times higher than that of non-facet areas.

14 citations

Journal ArticleDOI
TL;DR: In this article, the relation between low resistivity and Zn interstitial in ZnO single crystals implanted with the peak Si atomic concentration of 2.62 × 10 20 cm −3 is studied by combining Rutherford backscattering spectroscopy/channeling, photoluminescence, and Van der Pauw methods.
Abstract: The relation between low resistivity and Zn interstitial in ZnO single crystals implanted with the peak Si atomic concentration of 2.62 × 10 20 cm −3 is studied by combining Rutherford backscattering spectroscopy/channeling, photoluminescence, and Van der Pauw methods. The variation in resistivity from ∼10 4 Ω cm for un-implanted ZnO to ∼10 −3 Ω cm for as-implanted ones is observed. The lattice displacement of Zn atoms of ∼0.10 A from the 〈0 0 0 1〉 row is estimated from the normalized angular yield profiles, preserving the single crystallinity in as-implanted ZnO with a minimum yield ( χ min ) of ∼11%. The low resistance is maintained by the 1000 °C annealing, accompanied with the lattice displacement of Zn atoms of ∼0.07 A. These results suggest the existence of the shallow donor consisting of Zn interstitial and/or Zn interstitial-related complex corresponding to a newly appeared 3.33 eV-emission located at ∼40 meV from the bottom of the conduction band.

14 citations

Journal ArticleDOI
01 May 2015
TL;DR: In this paper, the van der Pauw Hall effect measurement was used to measure the electrical properties of the grown germanium crystals and photo-thermal ionization spectroscopy (PTIS) were used to identify what the impurity atoms are in the crystal.
Abstract: In the crystal growth lab of South Dakota University, we are growing high purity germanium (HPGe) crystals and using the grown crystals to make radiation detectors. As the detector grade HPGe crystals, they have to meet two critical requirements: an impurity level of ~109 to 10 atoms /cm3 and a dislocation density in the range of ~102 to 104 / cm3. In the present work, we have used the following four characterization techniques to investigate the properties of the grown crystals. First of all, an x-ray diffraction method was used to determine crystal orientation. Secondly, the van der Pauw Hall effect measurement was used to measure the electrical properties. Thirdly, a photo-thermal ionization spectroscopy (PTIS) was used to identify what the impurity atoms are in the crystal. Lastly, an optical microscope observation was used to measure dislocation density in the crystal. All of these characterization techniques have provided great helps to our crystal activities.

14 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202328
202241
202128
202030
201960
201867