Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this article, the exfoliation of oxygenated functional groups from 60-W hydrogen plasma treated graphene oxide films was investigated using X-ray diffractometric (XRD), Raman spectroscopic and atomic force microscopic techniques.
Abstract: The exfoliation of oxygenated functional groups from 60 W hydrogen plasma treated graphene oxide films was investigated using X-ray diffractometric (XRD), Raman spectroscopic and atomic force microscopic techniques. The interlayer spacing of the graphene oxide sheets was found from the XRD pattern to decrease from 0.88 to 0.35 nm after plasma treatment. The reduced intensity ratio of the D and G peaks of the Raman spectra indicates a decrease in the crystallite size of the sp
2 domains due to plasma treatment. Atomic force microscope showed the continuous morphology of the plasma treated film. The electrical properties of plasma treated samples spin-coated on silicon were studied using Van Der Pauw and non contacting microwave techniques. The sheet resistivity determined from Van der Pauw measurements was $$1.62\,{\text{M}}\Omega /{\text{sq}}$$
, yielding the value of $$3.1\,{\text{S}}\,{\text{m}}^{ - 1}$$
for the bulk conductivity. The charge mobility of $$3.8\,{\text{m}}^{2} \,{\text{V}}^{ - 1} \,{\text{s}}^{ - 1}$$
has been determined from Hall measurement technique.
13 citations
15 Mar 1999
TL;DR: In this paper, a micromachined thermal van der Pauw test structure was proposed to determine the in-plane thermal sheet conductivities of thin films, which is equivalent to an average thermal conductivity of the CMOS dielectric layer sandwich.
Abstract: A micromachined thermal van der Pauw test structure is reported. Similar in principle to the conventional electrical van der Pauw Greek cross test structures, it enables the in-plane thermal sheet conductivities of thin films to be determined. The analogy between the two-dimensional heat flow in thin film samples and the electrical current pattern in thin film conductors is exploited. A thermal sheet resistance of 1.87/spl times/10/sup 5/ K/W was extracted from the complete sandwich of dielectric layers of a commercial CMOS ASIC process. This is equivalent to an average in-plane thermal conductivity of the CMOS dielectric layer sandwich of /spl kappa/=1.44 Wm/sup -1/ K/sup -1/.
13 citations
TL;DR: In this paper, the van der Pauw method for 2D samples of arbitrary shape with an isolated hole is considered, and the relationship between extreme values of the resistances allow one to determine the specific resistivity of the sample and the dimensionless parameter related to the geometry of the isolated hole, known as the Riemann modulus.
Abstract: The van der Pauw method for 2D samples of arbitrary shape with an isolated hole is considered. Correlations between extreme values of the resistances allow one to determine the specific resistivity of the sample and the dimensionless parameter related to the geometry of the isolated hole, known as the Riemann modulus. The parameter is invariant under conformal mappings. Experimental verification of the method is presented.
13 citations
TL;DR: In this article, the potential problem of the Van der Pauw configuration with four equal finite edge contacts was solved by applying SchwarzChristoffel transformations, and simple approximative formulae have been found, which describe the electrical characteristics of the structure.
Abstract: The circular anisotropic Van der Pauw configuration with four equal finite edge contacts, symmetrical in respect of two orthogonal axes, is analyzed. Applying Schwarz‐Christoffel transformations, the potential problem of this structure is solved. The numerical calculations have been reduced to those of regular definite integrals. Furthermore, simple approximative formulae have been found, which describe the electrical characteristics of the structure. It is shown that a pocket calculator is sufficient for determining specific resistivities ρ1 and ρ2 from measurements.
13 citations
Journal Article•
TL;DR: The structural, electrical and optical properties of V 2 O 5 films were examined by X-ray diffraction (XRD), Van der Pauw technique and double-beam spectrophotometry.
Abstract: Thin films of V 2 O 5 have been deposited by spray pyrolysis technique on glasses substrate with different solution concentrations (molarities) at temperature equal 300 °C. The structural, electrical and optical characteristics of the V 2 O 5 films were examined by X-ray diffraction (XRD), Van der Pauw technique and double-beam spectrophotometry. X-ray diffraction reveals that the films, which have been deposited at T S = 300 °C with different solution molarities are polycrystalline in nature having orthorhombic type crystal structure and a preferential orientation along direction. The electrical resistivity at room temperature is decreased as the solution molarity increased. Transmission measurements showed that the transmission decreased as the molarity increased. The dependence of the refractive index, n, and extinction coefficient, k, on the wavelength for a sprayed film is also reported. Optical bandgap, Eg, has been reported for the V 2 O 5 films and is equal to 2.50 eV.
13 citations