Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this paper, the growth of ZnO layers deposited by spray pyrolysis on polymeric substrate was studied, and structural, morphological, optical and electrical properties of the layers were measured by X-ray diffraction, scanning electron microscopy, optical spectroscopy and van der Pauw and Hall method.
13 citations
TL;DR: In this article, the electrical conductivity of CaTi1−x Fe x O3-δ (x = 0.1) was measured by an alternating current van der Pauw technique versus oxygen partial pressure (10−30-1 atm) and temperature (450-1200°C).
Abstract: The electrical conductivity of CaTi1−x Fe x O3-δ (x = 0.1) was measured by an alternating current van der Pauw technique versus oxygen partial pressure (10−30-1 atm) and temperature (450–1200°C). The results were interpreted to reflect n-type, ionic and p-type conductivity at respectively low, intermediate and high oxygen partial pressures. The apparent activation enthalpy for the ionic conductivity, interpreted to reflect the mobility of oxygen vacancies, was 0.87 eV. The enthalpy of intrinsic formation of electronic defects (apparent band gap E g) was 3eV. The results are compared with literature data for CaTi0.8Fe0.2O3-δ and with Fe-substituted SrTiO3 and discussed in terms of iron-oxygen vacancy association and ordering.
13 citations
01 Mar 2008
TL;DR: In this paper, a nearly mirror-like and uniform InAs film is obtained at 580 C for a thickness of 2 mu m. The growth is performed using a standard two-step procedure.
Abstract: We report the successful growth of high quality InAs films directly on Si( 111) by Metal Organic Vapor Phase Epitaxy. A nearly mirror-like and uniform InAs film is obtained at 580 C for a thickness of 2 mu m. We measured a high value of the electron mobility of 5100 cm(2)/Vs at room temperature. The growth is performed using a standard two-step procedure. The influence of the nucleation layer, group V flow rate, and layer thickness on the electrical and morphological properties of the InAs film have been investigated. We present results of our studies by Atomic Force Microscopy, Scanning Electron Microscopy, electrical Hall/van der Pauw and structural X-Ray Diffraction characterization.
13 citations
TL;DR: In this article, thin films of polycrystalline silicon of 10-30 lm were grown on graphite substrates and the deposition experiments were conducted in a horizontal, atmospheric pressure RTCVD reactor from 800 to 1200iC employing the precursor trichlorosilane (TCS) and the dopant trichchloroborine (TCB) diluted in a hydrogen carrier gas.
13 citations
TL;DR: In this paper, the spectral dependence of the refractive index n and absorption coefficient a of the chalcopyrite compound Cu(In,Ga)Te-2 thin films were determined using rigorous expressions for transmission and reflection in an air/film/substrate/air multilayer system.
13 citations