Van der Pauw method

About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.

Determination of the Riemann modulus and sheet resistivity by a six-point generalization of the van der Pauw method

Abstract: A six-point generalization of the van der Pauw method is presented. The method is applicable for 2D homogeneous systems with an isolated hole. A single measurement performed on the contacts located arbitrarily on the sample edge allows us to determine the specific resistivity and a dimensionless parameter related to the hole, known as the Riemann modulus. The parameter is invariant under conformal mappings of the sample shape. The hole can be regarded as a high resistivity defect. Therefore, the method can be applied for the experimental determination of the sample inhomogeneity.

Accurate carrier-type determination of nonhomogenously doped diamond

Abstract: Electrical properties of B-doped homoepitaxialy grown diamond are characterized with and without mesa structures by Hall effect measurements as function of temperature in the as-grown state and following oxygen reactive ion etching (RIE). The extracted carrier type, concentration, and mobility are found to depend on the measurement contact configuration. For measurements performed without mesa major differences, even in carrier type, are found following the RIE treatment, however no changes what so ever are observed when measuring with a mesa structure. Finite element simulation confirms that carrier concentration or/and mobility inhomogeneities in the regions surrounding the contacts in Hall effect measurements using the Van der Pauw configuration can result in wrong assignments of carrier type, concentration and mobility.

Diffusion of dopants in highly (∼1020cm−3)n- and p-doped GaSb-based materials

Abstract: Diffusion of dopants at high doping concentrations (∼1020cm−3) of GaSb, GaInAsSb, and InAsSb grown in a molecular beam epitaxy system and doped with silicon, beryllium, and tellurium were investigated. The electrically active doping concentration for each material was determined by van der Pauw measurements, while the doping profiles were measured by secondary-ion-mass spectroscopy. The samples were annealed to analyze the diffusion behavior. Two different growth techniques to achieve high doping levels were compared: δ dopings and deposition with reduced growth rate. The diffusion of Be in InAsSb:Be could not be prevented, neither by a low growth rate nor by intermediate GaSb spacers. A strong diffusion of Be and Te was found for δ-doped samples in InAsSb, whereas in slowly grown material the diffusion can be limited for Te as dopant.

Resistivity Correction Factor for the Four-Ring Probe Method

Abstract: The four-ring probe method which was devised as a method of measuring resistivity is described. This method is applicable to the system consisting of a circular disk sample and a four-ring probe array. The resistivity correction factor (RCF), which is necessary for correcting data measured by means of the four-ring probe method and for obtaining the resistivity of the sample, is derived analytically. The properties of the RCF are discussed on the basis of the theoretical analysis. It is demonstrated by the experimental results that (i) the RCF corrects data accurately, (ii) it is insensitive to the shape of the sample and the measurement position as long as the thickness of the sample is less than the probe spacing, and (iii) the four-ring probe method is compatible with the four-point probe method.