Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this paper, a high-responsivity ultraviolet photodetector fabricated from fluorine doped Mg0.4Zn0.6O thin film grown by molecular beam expitaxy was presented.
10 citations
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TL;DR: Using gated van der Pauw structures, this article showed that the transient behavior of AlGaN/GaN heterostructure field effect transistors is determined by transport, rather than emission capture.
Abstract: Transient phenomena in AlGaN/GaN heterostructure field-effect transistors are attributed to trapping and detrapping of electrons from deep localized states, and the measured activation energies are conventionally associated with the electron capture and emission processes. This standard interpretation ignores, however, transport between the two-dimensional electron gas and the trap. Using gated van der Pauw structures, we demonstrate that the transient behavior is determined by transport (at least for the trapping process). The measured activation energy is, therefore, a characteristic of the transport process rather than the emission-capture processes.
10 citations
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TL;DR: In this article, the authors compared the ionic conductivity of single-crystal GDC films and poly-crystalline GDC thin films, showing that the single crystal film exhibits a lower activation energy for ionic conduction of 0.85 − 0.01 − 1/eV than the 0.99 − 0.01 − 2 /eV observed in the poly-Crystal film.
10 citations
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TL;DR: In this article, a thin, strongly disturbed surface dislocations were produced by lapping or other mechanical treatment to prepare ohmic contacts on high-resistivity CdTe for Hall effect measurements.
Abstract: There are large variations in the density and distribution of dislocations in CdTe crystals. The dislocation density was determined by etching. For the electrical measurements (Hall effect and conductivity by the Van der Pauw method), crystal regions were selected which showed extremely different dislocation densities. The dislocation density did not noticeably affect the bulk electrical properties. For the preparation of ohmic contacts, a thin, strongly disturbed surface dislocations were produced by lapping or other mechanical treatment to prepare ohmic contacts on high-resistivity CdTe for Hall effect measurements.
10 citations
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TL;DR: In this article, the effects of laser fluence, the number of shots with the laser, and Sb content on the electrical properties such as resistivity, carrier concentration, and carrier mobility of the Sb-doped epitaxial (001) SnO2 thin films were investigated.
Abstract: Excimer-laser-assisted metal–organic deposition (ELAMOD) was used to prepare Sb-doped epitaxial (001) SnO2 thin films on (001) TiO2 substrates at room temperature. The effects of laser fluence, the number of shots with the laser, and Sb content on the electrical properties such as resistivity, carrier concentration, and carrier mobility of the films were investigated. The resistivity of the Sb-doped epitaxial (001) SnO2 thin film prepared using an ArF laser was lower than that of the film prepared using a KrF laser. The van der Pauw method was used to measure the resistivity, carrier concentration, and carrier mobility of the Sb-doped epitaxial (001) SnO2 thin films in order to determine the effect of Sb content on the electrical resistivity of the films. The lowest resistivity obtained for the Sb-doped epitaxial (001) SnO2 thin films prepared using ELAMOD with the ArF laser and 2 % Sb content was 2.5 × 10−3 Ω cm. The difference between the optimal Sb concentrations and resistivities of the films produced using either ELAMOD or conventional thermal MOD was discussed.
10 citations