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Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this paper, a six point generalization of the van der Pauw method is presented for two-dimensional homogeneous systems with an isolated hole and a single measurement performed on the contacts located arbitrarily on the sample edge allows to determine the specific resistivity and a dimensionless parameter related to the hole, known as the Riemann modulus.
Abstract: Six point generalization of the van der Pauw method is presented. The method is applicable for two dimensional homogeneous systems with an isolated hole. A single measurement performed on the contacts located arbitrarily on the sample edge allows to determine the specific resistivity and a dimensionless parameter related to the hole, known as the Riemann modulus. The parameter is invariant under conformal mappings of the sample shape. The hole can be regarded as a high resistivity defect. Therefore the method can be applied for experimental determination of the sample inhomogeneity.
9 citations
TL;DR: In this article, electrical properties of In2O3 thin film (100 nm) at elevated temperatures (667-1118 K) and under controlled oxygen activity were investigated using the measurements of electrical conductivity (EC) using the method proposed by van der Pauw.
Abstract: This paper reports electrical properties of In2O3 thin film (100 nm) at elevated temperatures (667–1118 K) and under controlled oxygen activity. The present study, based on the measurements of electrical conductivity (EC) using the method proposed by van der Pauw, includes the following determinations: Dynamics of EC changes during gas/solid equilibration of the O2/In2O3 system; The dependence of EC on oxygen partial pressure dependence; The dependence of EC on temperature.
9 citations
TL;DR: In this paper, a two-step procedure is presented for temperature-dependent carrier-concentration and mobility profiling of InP and GaAs epitaxially grown on Si, where carrier concentrations and mobilities are determined by the van der Pauw technique between 14 and 300 K using a refrigerator-cooled cryostat.
Abstract: A two‐step procedure is presented for temperature‐dependent carrier‐concentration and mobility profiling of InP and GaAs epitaxially grown on Si. Carrier concentrations and mobilities are determined by the van der Pauw technique between 14 and 300 K using a refrigerator‐cooled cryostat. Anodic oxidation and oxide stripping by chemical etching were selected for the subsequent removal of controlled thin sublayers. By the combination of differential and temperature‐dependent van der Pauw measurements, mobilities and carrier concentrations in dependence on depth and temperature have been extracted whereby the carrier‐concentration profile at room temperature agrees very well with the results obtained by the electrochemical C/V technique. For InP/Si at a distance of more than 0.7 μm away from the heterointerface, the dependence of the carrier mobility on the concentration at room temperature is essentially the same as for InP/InP layers. At low temperatures, e.g., 77 K, scattering by dislocations results in a mobility reduction in InP/Si and GaAs/Si with respect to homoepitaxy. Due to the nonuniform distribution of impurities and dislocations the temperature dependences of carrier concentration and mobility vary considerably with depth, thus strongly recommending the use of the differential technique.
9 citations
TL;DR: In this paper, the authors compared two van-der-Pauw-type measurement configurations of resistivity, with respect to the movement of the point-like voltage and current contacts away from the periphery of a thin, square sample.
9 citations
TL;DR: Theoretically and experimentally evaluated optoelectronic properties of GZO (Ga-doped zinc oxide) were correlated in the present article as mentioned in this paper, where the pulsed laser deposition technique was used to fabricate gZO thin films on p-GaN, Al2O3, and p-Si substrates.
Abstract: Theoretically and experimentally evaluated optoelectronic properties of GZO (Ga-doped zinc oxide) were correlated in the present article. Density functional theory and Hubbard U (DFT + Ud + Up) first-principle calculations were used for the theoretical study. The pulsed laser deposition technique was used to fabricate GZO thin films on p-GaN, Al2O3, and p-Si substrates. X-ray diffraction graphs show single crystal growth of GZO thin films with (002) preferred crystallographic orientation. The chemical composition was studied via energy dispersive X-ray spectroscopy, and no other unwanted impurity-related peaks were found, which indicated the impurity-free thin film growth of GZO. Field emission scanning electron microscopic micrographs revealed noodle-, seed-, and granular-like structures of GZO/GaN, GZO/Al2O3, and GZO/Si, respectively. Uniform growth of GZO/GaN was found due to fewer mismatches between ZnO and GaN (0.09%). Hall effect measurements in the van der Pauw configuration were used to check elec...
9 citations