Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this article, the thermal behavior of oxygen-related complexes in boron doped Czochralski Silicon (Cz-Si) wafers at 450°C and 800°C were investigated using Fourier transform infrared spectroscopy (FTIR) and Hall mobility measurements.
Abstract: The thermal behaviors of oxygen-related complexes in boron doped Czochralski Silicon (Cz-Si) wafers at 450°C and 800°C were investigated using Fourier transform infrared spectroscopy (FTIR) and Hall mobility measurements. Activation of thermal donors (TDs) at 450°C leads to a decrease of both mobility and majority carrier concentration using the four point probes configuration of Van Der Pauw. It was found that annealing at 450°C would possibly affect the electronic properties of the Si wafers via the formation of interstitial dioxygen defects (IO2i), which exhibit an IR absorption band positioned at 545 cm–1. A strengthening of the IR bands peaking at around 1595 cm–1, 1667 cm–1, 1720 cm–1 and 1765 cm–1 occurs at 450°C, while they disappear at 800°C. At high temperatures, the precipitation of interstitial oxygen becomes predominant over all other oxygen-related reactions. The dynamic of oxygen-thermal donor generation-annihilation in Cz-Si involving the formation of small oxygen clusters is discussed.
9 citations
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TL;DR: In this paper, a direct analytical method for determining the resistance matrix of a Hall disk with an arbitrary number of extended peripheral contacts has been developed, which does not require the use of any conformal mappings.
Abstract: A direct analytical method for determining the Resistance Matrix of a Hall disk with an arbitrary number of extended peripheral contacts has been developed. The method does not require the use of any conformal mappings. It works also in the case of large magnetic fields. The resulting explicit formulas involve the angular coordinates of the asymmetrical contacts ends, the sheet resistance, and the Hall angle θH as inputs. The formulas are obtained through the calculation of some definite integrals of analytical functions with integrable singularities at the end of the peripheral contacts. The method can be used for determining the sheet resistance and the Hall mobility of a circular plate with extended contacts on its boundary by utilizing two measurements similar to those used by van der Pauw's method for pointlike contacts.
9 citations
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TL;DR: In this paper, a linear correlation between absorption at 5.5μm and hole concentration (p) was established, and the variation in activation energy with p, and also with NA and find excellent agreement with theory.
Abstract: CdGeAs2 crystals typically exhibit an absorption band near 5.5μm that limits their use as a nonlinear frequency-conversion material in high-power infrared laser systems. This absorption band is related to the p-type nature of the as-grown bulk crystals. We correlate the electrical properties, as determined using van der Pauw Hall measurements, with optical absorption and photoluminescence data. The samples are all p type at room temperature with hole concentrations varying from 1×1015to2×1017cm−3. High-absorption samples have two acceptor levels, while low-absorption samples have one deep acceptor. A linear correlation between absorption at 5.5μm and hole concentration (p) is established. Also, we account for ambipolar conduction and explain possible discrepancies which may arise when comparing hole concentrations and optical data in low-absorption CdGeAs2 samples. We correlate the variation in activation energy with p, and also with NA and find excellent agreement with theory. An ionization energy is obt...
9 citations
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TL;DR: In this paper, the lattice constants, exciton transition energies, and PL peak energies on Cu(Al x Ga 1− x )SSe pentenary alloys were examined in detail.
9 citations
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TL;DR: The relationship between the densities of residual carriers and those of dislocation in GaSb films grown on Si substrates was investigated by cross-sectional transmission electron microscopy (TEM) images as discussed by the authors.
9 citations