Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this article, the correlation between electrical conductivity and magnetic field response, due to multi-walled carbon nanotubes' distribution within the polymer matrix, has been demonstrated using a contactless and non-destructive technique.
Abstract: The correlation between electrical conductivity and magnetic field response, due to multi-walled carbon nanotubes' (MWCNTs) distribution within the polymer matrix, has been demonstrated using a contactless and non-destructive technique. Multi-walled carbon nanotubes, both buckypaper and reinforced epoxy matrix specimens with different nanotube percentages, have been inspected using the eddy current technique based on an HTc SQUID magnetometer. The SQUID magnetic field response, due to the nanotube distribution, has been compared with the thermographic technique results. Moreover, the electrical conductivity of nanotube-reinforced composites and buckypaper has been carried out by using the Van der Pauw method.
9 citations
TL;DR: In this article, the diffusion of gallium antimonide (GaSb) was carried out by measuring Hall effect according to van der Pauw, conductivity, energy dispersive X-ray and surface electron microscopy.
9 citations
TL;DR: In this paper, the first InNAsSb single crystals with a room temperature cutoff wavelength of 11.5 to 13.5 µm were grown on (100) InAs substrates by melt epitaxy (ME).
Abstract: We grew, for the first time, InNAsSb single crystals with a room temperature cutoff wavelength of 11–13.5 µm on (100) InAs substrates by melt epitaxy (ME). The crystals were characterized using X-ray diffraction, electron-probe microanalysis (EPMA), temperature-dependent transmittance and Van der Pauw measurements. An obvious redshift of cutoff wavelength was observed with increasing N concentration from 13 to 19% in the epilayers. The cutoff wavelength varies from 12.5 to 8.9 µm in the temperature range from 300 to 77 K. The thick epilayers show a good macroscopic homogeneity of the composition. An electron mobility of 55,800 cm2/Vs with a carrier density of 1.08×1016 cm-3 was obtained at 77 K, indicating possible applications for infrared photodevices.
9 citations
TL;DR: In this paper, the structural, electrical, and optical properties of ZnO:Ga films obtained by varying the flow rate of TEG from 0.56 to 3.35μmol∕min were examined.
Abstract: Gallium-doped ZnO films were grown on p-Si(111) substrates by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD) using diethylzinc and water as reactant gases and triethyl gallium (TEG) as a n-type dopant gas. The structural, electrical, and optical properties of ZnO:Ga films obtained by varying the flow rate of TEG from 0.56to3.35μmol∕min were examined. X-ray diffraction patterns and scanning electron microscopy images indicated that Ga doping plays a role in forming microstructures in ZnO films. A flat surface with a predominant orientation (101) was obtained for the ZnO:Ga film fabricated at a flow rate of TEG=2.79μmol∕min. This film also revealed a lowest resistivity of 4.54×10−4Ωcm, as measured using the van der Pauw method. Moreover, low temperature photoluminescence (PL) emission recorded at 12K demonstrated the Burstein Moss shift of PL line from 3.365to3.403eV and a line broadening from 100to165meV as the TEG flow rate varied from 0.56to2.79μmol∕min. This blueshift behavior o...
9 citations
TL;DR: In this paper, a single phase conductive Zn(O,S) layers were prepared by one stage pulsed laser deposition technique without any post treatment, which demonstrated good adhesion to the FTO/glass substrates.
9 citations