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Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this article, Fourier transform infra-red spectroscopy, and four-probe van der Pauw technique electrical conductivity measurements are reported for the first time.
Abstract: Polyaniline, poly(N-methyl aniline), poly(2-ethyl aniline) and poly(2-propyl aniline) were intercalated into layered molybdenum diselenide by using the exfoliation/restacking property of LixMoSe2. MoSe2 was reacted with n-butyllithium to form LixMoSe2. The LixMoSe2 was exfoliated in N-methylformamide (NMF) with the help of ultrasonication which lead to the formation of single layers of MoSe2. Addition of NMF solutions of the polymers to the exfoliated layers resulted in their intercalation into MoSe2. The products were characterized by powder X-ray diffraction. Fourier transform infra-red spectroscopy, and four-probe van der Pauw technique electrical conductivity measurements are reported here for the first time.
7 citations
TL;DR: In this paper, a manufacturing-compatible 300 mm chamber reactor for atomic layer deposition or chemical vapour deposition is employed to thermally convert polycrystalline platinum monosulfide (PtS) in a H2/H2S gaseous atmosphere for 7 hours at a chamber temperature of 550 °C.
7 citations
TL;DR: In this article, Van der Pauw measurements showed that the 300 K electron mobilities of InAsSb materials are higher than 5×104 cm2 V-1 s-1 with carrier densities of (1-3)×1016 cm-3.
Abstract: InAsSb immersion photoconductors with a response wavelength range of 2–9 µm operated at room temperature were reported. The detectors are based on InAsSb single crystals grown on InAs substrates by melt epitaxy (ME). Van der Pauw measurements showed that the 300 K electron mobilities of InAsSb materials are higher than 5×104 cm2 V-1 s-1 with carrier densities of (1–3)×1016 cm-3. The photoconductors were measured using a standard blackbody source at a temperature of 500 K and a modulation frequency of 800 Hz under an applied bias current of 10 mA. At 293 K, the blackbody detectivity Dbb* (500 K, 800) reaches (2–6)×108 cm Hz1/2 W-1, indicating the high sensitivity of the detectors and their potential detection applications.
7 citations
TL;DR: In this article, powder and crystal structures were examined by X-ray diffraction and the transport and magnetic characteristics were measured, where powders resulted to be single-phase and the relevant composition was assumed to be equal to the nominal one.
Abstract: Vn-xTixO2n-1 Magneli phases have been synthesized under vacuum in powder form (n = 4, 0 ≤ x ≤ 0.4) and crystals (n = 4 and 5, x = 0.5 and 1.4, respectively), grown by chemical vapour transport in closed ampoules. TeCl4 and NH4Cl were used as transporting agents. Needle-shaped crystals as long as 200-300 micrometers or 2-3 mm were obtained when in presence of NH4Cl or TeCl4, respectively. The powder and crystal structures were examined by X-ray diffraction and the transport and magnetic characteristics were measured.. The powders resulted to be single-phase and the relevant composition was assumed to be equal to the nominal one. The overall stoichiometry of compounds, n, was determined from single crystal X-ray diffraction data. The Ti content, x, was deduced from the elementary cell volume, by applying the Vegard law. Crystals were mainly untwinned and of good quality. The elementary cell of both, powders and crystals, was triclinic (P-1) and did not change with doping. DC electrical resistivity of the crystals was measured in a four-points (van der Pauw) configuration. DC magnetic susceptibility of the powders was measured in a SQUID magnetometer. The Ti doping was found to progressively smooth and finally to suppress the magnetic transitions occurring in the V4O7. The metal-insulator transitions observed in V4O7 and V5O9, at around 235 and 125 K respectively, were not observed in the doped crystals, thus indicating some significant change of the electronic structure of the V oxides. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
7 citations
TL;DR: In this article, a GaInAs intermediate layer is used to prevent n-type inversion in Zn-doped AlInAs, which occurs when it is grown directly on an InP buffer layer.
7 citations