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Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this article, a self-doped transparent conducting electrode was synthesized by aerosol-spray deposition technique on soda lime glass substrate by one-step deposition process using tin-II fluoride (SnF2) and fluorine (F).
Abstract: Fluorine-doped tin-oxide (SnO2:F) thin films were prepared by aerosol-spray deposition technique on soda lime glass substrate by one-step deposition process. Tin (II) fluoride (SnF2) was used as source of tin (Sn) and doping element fluorine (F), to synthesis a self-doped transparent conducting electrode. The doping concentration of the thin films was controlled by varying deposition temperature and the molar concentration of the SnF2 solution. Electrical resistivity of the samples was measured by Van Der Pauw method and the mobility was calculated by Hall measurement technique. SnO2:F thin films grown under optimum condition showed 1.2 × 10−4 Ω-cm resistivity and 6.5 × 1020/cm3 carrier concentration. Surface-free energy of the deposited thin films was calculated from the measurement of contact angle for three different probe liquids using the Wendt theory. Sample grown at optimum condition showed the lowest surface-free energy of 63.55 mJ/m2 with dominating polar component. Reduced graphene oxide was used to produce a resistive humidity-sensing device to study the effectiveness of FTO thin film as back electrode. Maximum of 18.27% responsivity was observed for the relative humidity of 90% along with the sensitivity of 1.16 Ω/% RH.
6 citations
TL;DR: In this paper, the authors have grown p-type semi-insulating (SI) InP ingots co-doped with a shallow acceptor (Hg or Cd) and chromium as a deep donor.
Abstract: The authors have grown p-type semi-insulating (SI) InP ingots co-doped with a shallow acceptor (Hg or Cd) and chromium as a deep donor. The compensation mechanism is the following: the holes due to the shallow acceptor are compensated by the chromium-related deep donor level. The crystals have been characterised by spark-source mass spectrometry (SSMS), secondary-ion mass spectrometry (SIMS), the temperature-dependent Hall (TDH) effect using the Van der Pauw technique and electron paramagnetic resonance (EPR). Deduced from the activation energy measurements, the donor deep level of chromium Cr3+/Cr4+ has been found at Ev+0.56 eV. SIMS depth profiles, on such SI substrates annealed at 750 degrees C, show that iron and chromium thermal stabilities are very similar.
6 citations
TL;DR: In this paper, the authors investigate the limitations of conventional van der Pauw and Hall effect measurements with micro four-point probe (M4PP) and micro Hall effect methods for ultra-shallow junctions in In0.53Ga0.47As.
Abstract: In this study, we investigate the limitations to sheet resistance and Hall effect characterization of ultra-shallow junctions (USJs) in In0.53Ga0.47As. We compare conventional van der Pauw and Hall effect measurements with micro four-point probe (M4PP) and micro Hall effect methods. Due to the high carrier mobility of InGaAs, we extend the micro-Hall effect position error suppression method to also take geometrical magnetoresistance into account. We find that the conventional techniques fail to measure accurately on n++∕p+ USJ due to a significant leakage current, whereas the M4PP and micro Hall effect methods are able to give accurate results. Finally, we observe a significant reduction in the carrier mobility for InGaAs USJ.
6 citations
TL;DR: The use of GaN film structures as a calibration system helped to increase the accuracy of the coaxial-probe-aided measurement of Rsh to a level of ∼10%.
Abstract: In this work, our earlier method for measuring resistance Rsh of semiconductor films with a near-field scanning microwave microscope [A. N. Reznik and S. A. Korolyov, J. Appl. Phys. 119, 094504 (2016)] is studied in a 0.1 kΩ/sq < Rsh < 15 kΩ/sq range. The method is based on a microscope model in the form of a monopole or dipole antenna interacting with an arbitrary layered structure. The model fitting parameters are determined from the data yielded by calibration measurements on a system of etalon samples. The performance of the method was analyzed experimentally, using strip-probe and coaxial-probe microscopes in the frequency range of 1-3 GHz. For test structures, we used doped GaN films on the Al2O3 substrate and also transistor structures based on the AlGaN/GaN heterojunction and AlGaAs/GaAs/InGaAs/GaAs/AlGaAs quantum well with a conducting channel. The obtained microwave microscope data were compared with the results of measurements by the van der Pauw method. At the first stage of the experiment, th...
6 citations
TL;DR: InSb/CdTe heterostructures were grown by MBE, including a 10 layer superlattice as mentioned in this paper, which was characterized by X-ray diffraction, van der Pauw measurements, and SNMS depth profiling.
Abstract: InSb/CdTe heterostructures were grown by MBE, including a 10 layer “superlattice”. The structures were characterized by X-ray diffraction, van der Pauw measurements, and SNMS depth profiling. The interfaces widen because of interdiffusion and through the formation of an interface compound from the reaction of Te with the InSb surface. The interface compound is identified as strained InTe(II). The interfaces are still too wide for practical devices. Thermochemical analysis indicates that the reaction can be suppressed by applying a Cd overpressure. The diffusion of In and Sb in CdTe is very fast and will necessitate a MEE growth scheme at lower temperatures.
6 citations