Van der Pauw method

About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.

van der Pauw method를 이용한 금속도전율 표준시편 개발

Abstract: The widely-used measurement methods for conductivity of non-magnetic metals are van der Pauw method, Two Point Probe method and Eddy Current method. Among them a more simpler and easier method is the Eddy Current method and an instrument using the method is a Conductivity Meter which can measure a conductivity by contacting its probe on a sample surface. However, conductivity standards are essentially needed to confirm the meter’s performance or to calibrate it. In this study, six kinds of the standards which are made of Cu, Al-1, Al-2, brass, Zn and SUS-316 are developed and conductivity ranges for the standards are 2.27 %IACS ~ 101.6 %IACS with measurement uncertainty of less than 0.3 %.

Fay meets van der Pauw: the trisecant identity and the resistivity of holey samples

Abstract: The van der Pauw method is commonly used in the applied sciences to find the resistivity of a simply connected, two-dimensional conducting laminate. Given the usefulness of this 4-point probe metho...

Dopant behaviour and damage annealing in silicon implanted with 1 keV arsenic

Abstract: The level of activation in ultra-shallow As doped Si as a function of the anneal condition has been investigated with spreading resistance profiling (SRP), four point probe (FPP) and Van der Pauw (VDP) methods. Double alignment medium energy ion scattering (MEIS) and low energy secondary ion mass spectrometry (SIMS) have been used to assess the damage annealing and dopant behaviour in the near surface regions. An inactive dopant solid solution was formed in Si following re-growth of the amorphous layer. When annealing in an oxidising ambient, although a high fraction of the implanted dose remains trapped in the oxide layer, a higher level of electrical activation is observed than compared to the non-oxidising anneal. Evidence of dopant out diffusion is observed during high temperature annealing in a non-oxidising gas ambient. The processes that occur during the anneal in the near surface regions of the sample have been discussed and related to the level of dopant activation achieved.

Properties of Electrodeposited CoFeNi/Cu Superlattices: The Effect of CoFeNi and Cu Layers Thicknesses

Abstract: CoFeNi/Cu superlattices were grown on Ti substrate by electrodeposition as a function of the ferromagnetic and non-magnetic layer thicknesses. In order to examine the effect of the Cu layer thickness on the film properties, the Cu layer thickness was changed from 0.5 to 6 nm, while the CoFeNi layer thickness was kept constant at 4 nm. Also, for the CoFeNi layer effect, the CoFeNi layer thickness was changed from 2 to 15 nm, while the Cu layer thickness was fixed at 4 nm. The structural analysis studied by X-ray diffraction indicated that the superlattices have face-centered-cubic structure. Magnetic characteristics were investigated by vibrating sample magnetometer. From the hysteresis curves, the coercivity and the saturation magnetization were determined. It was found that the easy-axis of the films is parallel to the film plane. Magnetoresistance measurements were made by the Van der Pauw method at the room temperature with magnetic fields up to ±12 kOe. All superlattices exhibited giant magnetoresistance (GMR). As the ferromagnetic layer thickness increased up to 4 nm, the GMR value increases up to 22 % and then decreases. The superlattices saturated at the lower magnetic layers with increasing ferromagnetic layer thickness. The maximum GMR value was obtained to be 22 % for a superlattice with 375[CoFeNi(4 nm)/Cu(4 nm)].