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Van der Pauw method

About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.


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TL;DR: In this article, the effects of Si3N4 encapsulation, anneal temperature and time, and substrate Cr-doping level were investigated using heatpulse rapid thermal annealing.
Abstract: Heatpulse rapid thermal annealing was used to activate Si implants of 3.5 × 1012 cm−2 at 100 keV and 1.0 × 1013 and 1.0 × 1014 cm−2 at 200 keV into semi-insulating GaAs. The effects of Si3N4 encapsulation, anneal temperature and time, and substrate Cr-doping level were investigated. The annealed samples were characterized with C-V, Van der Pauw, differential Hall, and SIMS measurements. Conventional furnace anneals were carried out for comparison, and in all cases, Heatpulse anneals produced sharper carrier concentration profiles. 84% electrical activation was obtained for the 200 keV, 1.0 × 1013 cm−2 implant after a 950°C, 5 sec. Heatpulse anneal. Capped Heatpulse anneals produced less Cr depletion from the implanted region than furnace anneals.

5 citations

Journal ArticleDOI
TL;DR: In this paper, a two-step sulfurization process was performed to obtain the desired CTS phase, and the results showed that the CTS layer prepared using the pre-treatment step at 200°C exhibited more promising structural and optical properties for potential photovoltaic applications.
Abstract: In this study, Cu2SnS3 (CTS) thin films prepared by a two-step sulfurization process were characterized. Cu and Sn metallic layers were first deposited on glass substrates by sputtering and then annealed in-situ while in the sputtering chamber to obtain CuSn (CT) alloys. This was followed by a pre-treatment step at temperatures between 200 and 350 °C in presence of S vapors. Finally, a full sulfurization step was performed at 525 °C to obtain the desired CTS phase. CTS films were characterized using EDX, XRD, Raman spectroscopy, SEM, optical transmission and Van der Pauw methods. It was found that all CTS samples had Cu-poor chemical composition. XRD data revealed only diffraction peaks belonging to CTS structure after the full sulfurization step. Raman spectra of the samples showed that except for the CTS sample pre-treated at 250 °C (CTS-250), which displayed the tetragonal crystal system, the films were dominated by the monoclinic structure. SEM surface images showed dense and polycrystalline microstructure, CTS-200 sample exhibiting a more uniform morphology. Optical band gap values were found to be ranging from 0.92 to 1.19 eV. All samples showed p-type conductivity but the sample pre-treated at 350 °C had higher resistivity and lower carrier concentration values. Overall, the CTS layer prepared using the pre-treatment step at 200 °C exhibited more promising structural and optical properties for potential photovoltaic applications. This work demonstrated that it is possible to change the crystal structure of sulfurized CTS thin films through a pre-treatment step.

5 citations

Journal ArticleDOI
TL;DR: In this paper, the variation of the transmitted amplitude ratio in ln[E(B)/E(0)] and its correlation with Faraday rotation were studied as a function of magnetic field in the Faraday configuration in a series of n and p-type germanium samples, (111 and (110) oriented, with resistivity lying in the range 30-1.5 Ω cm at 24.0 and 31.9 GHz at room temperature.
Abstract: The variation of the transmitted amplitude ratio in ln[E(B)/E(0)] and its correlation with Faraday rotation, i.e., (1/γ)ln[E(B)/E(0)] have been studied as a function of magnetic field in the Faraday configuration in a series of n‐ and p‐type germanium samples, (111) and (110) oriented, with resistivity lying in the range 30–1.5 Ω cm at 24.0 and 31.9 GHz at room temperature. From the measured data, the values of the Hall mobility and scattering parameter 〈τ3〉/〈τ2〉 〈τ〉 in the n‐type samples and the light‐hole mobility in the p‐type samples have been evaluated using the expressions of Furdyna and Brodwin. The values of the Hall mobility have been compared with the directly measured values by the van der Pauw technique.

5 citations

Journal ArticleDOI
TL;DR: The thermodynamics and kinetics of copper transport in bornite (Cu5FeS4) have been investigated in this article, where the van der Pauw technique was used to obtain the electronic conductivity (σe) as a function of temperature.

5 citations

Journal ArticleDOI
TL;DR: In this paper, the authors used an asymmetric bipolar pulsed-DC magnetron sputtering system under the Ar atmosphere for the deposition of ZnO and Al-dopoed thin films of hexagonal crystal structure.

5 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202328
202241
202128
202030
201960
201867