Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
Papers published on a yearly basis
Papers
More filters
TL;DR: In this article, a transparent and conductive thin films of indium tin oxide were fabricated on glass substrates by the thermal evaporation technique and the structure and phase purity, surface morphology, optical and electrical properties of thin films were studied by x-ray diffractometry and Raman spectroscopy, scanning electron microcopy and atomic force microscopy.
Abstract: Transparent and conductive thin films of indium tin oxide were fabricated on glass substrates by the thermal evaporation technique. Tin doped indium ingots with low tin content were evaporated in vacuum (1.33 × 10−7 kpa) followed by an oxidation for 15 min in the atmosphere in the temperature range of 600–700°C. The structure and phase purity, surface morphology, optical and electrical properties of thin films were studied by x-ray diffractometry and Raman spectroscopy, scanning electron microcopy and atomic force microscopy, UV–visible spectrometry and Hall measurements in the van der Pauw configuration. The x-ray diffraction study showed the formation of the cubical phase of polycrystalline thin films. The morphological analysis showed the formation of ginger like structures and the energy dispersive x-ray spectrum confirmed the presence of indium (In), tin (Sn) and oxygen (O) elements. Hall measurements confirmed n-type conductivity of films with low electrical resistivity (ρ) ∼ 10−3 Ω cm and high carrier concentration (n) ∼ 1020 cm−3. For prevalent scattering mechanisms in the films, experimental data was analyzed by calculating a mean free path (L) using a highly degenerate electron gas model. Furthermore, to investigate the performance of the deposited films as a transparent conductive material, the optical figure of merit was obtained for all the samples.
46 citations
TL;DR: In this article, a simple setup was used to measure the sheet resistances of polypyrrole-coated woven para-aramide fabrics and compared with those obtained using a sophisticated commercial collinear array probe.
Abstract: In this article, it is shown that the Van der Pauw (VDP) method, generally known in microelectronics, can be successfully adapted to sheet resistance measurements of electroconductive fabrics. We prepared two polypyrrole-coated woven para-aramide fabrics and used a simple setup to measure their sheet resistances. The results were then compared with those obtained using a sophisticated commercial collinear array probe. The measurements were done in a 1 month interval, to investigate the influence of the coating aging on the sheet resistance of the samples. The influence of the contact positioning on the accuracy of the VDP measurement was investigated. © 2010 Wiley Periodicals, Inc. J Appl Polym Sci, 2010
45 citations
TL;DR: In this article, an atomic layer deposition was employed to deposit relatively thick (∼30 nm) aluminum oxide (Al2O3) using trimethylaluminum and triply-distilled H2O precursors onto epitaxial graphene grown on the Si-face of silicon carbide.
Abstract: Atomic layer deposition was employed to deposit relatively thick (∼30 nm) aluminum oxide (Al2O3) using trimethylaluminum and triply-distilled H2O precursors onto epitaxial graphene grown on the Si-face of silicon carbide. Ex situ surface conditioning by a simple wet chemistry treatment was used to render the otherwise chemically inert graphene surface more amenable to dielectric deposition. The obtained films show excellent morphology and uniformity over large (∼64 mm2) areas (i.e., the entire sample area), as determined by atomic force microscopy and scanning electron microscopy. X-ray photoelectron spectroscopy revealed a nearly stoichiometric film with reduced impurity content. Moreover, from capacitance-voltage measurements a dielectric constant of ∼7.6 was extracted and a positive Dirac voltage shift of ∼1.0 V was observed. The graphene mobility, as determined by van der Pauw Hall measurements, was not affected by the sequence of surface pretreatment and dielectric deposition.
45 citations
TL;DR: In this paper, a multilayer structure consisting of alternating undoped and heavily boron-doped regions was fabricated in situ and the interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt.
Abstract: Limited reaction processing was used to deposit ultrathin, highly doped layers of epitaxial silicon. Multilayer structures consisting of alternating undoped and heavily boron‐doped regions were fabricated in situ. The interlayer doping profiles of these structures, as determined by secondary ion mass spectroscopy, are abrupt. Van der Pauw measurements indicate that the electrical characteristics of the p+ epitaxial films are comparable to bulk material.
45 citations
TL;DR: In this paper, structural electrical and optical properties of AgInS2 (AIS) thin films grown by the single-source thermal evaporation method were studied and the X-ray diffraction spectra indicated that the AIS single phase was successful grown by annealing above 400°C in air.
45 citations