Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this paper, the authors presented transport measurements on both vacancy doped and gold doped Hg07Cd03Te p-type epilayers grown by liquid phase epitaxy (LPE), in which a thin 2 µm surface layer has been converted to n-type by a short reactive ion etching (RIE) process.
Abstract: This paper presents transport measurements on both vacancy doped and gold doped Hg07Cd03Te p-type epilayers grown by liquid phase epitaxy (LPE), with NA=2×1016 cm−3, in which a thin 2 µm surface layer has been converted to n-type by a short reactive ion etching (RIE) process Hall and resistivity measurements were performed on the n-on-p structures in van der Pauw configuration for the temperature range from 30 K to 400 K and magnetic field range up to 12 T The experimental Hall coefficient and resistivity data has been analyzed using the quantitative mobility spectrum analysis procedure to extract the transport properties of each individual carrier contributing to the total conduction process In both samples three distinct carrier species have been identified For 77 K, the individual carrier species exhibited the following properties for the vacancy and Au-doped samples, respectively, holes associated with the unconverted p-type epilayer with p ≈ 2 × 1016 cm−3, μ ≈ 350 cm2V−1s−1, and p ≈ 6 × 1015 cm−3, μ ≈ 400 cm2V−1s−1; bulk electrons associated with the RIE converted region with n ≈ 3 × 1015cm−3, μ ≈ 4 × 104 cm2V−1s−1, and n ≈ 15 × 1015 cm−3, μ ≈ 6 × 104 cm2V−1s−1; and surface electrons (2D concentration) n ≈ 9 × 1012 cm−2 and n ≈ 1 × 1013 cm−2, with mobility in the range 15 × 103 cm2V−1s−1 to 15 × 104 cm2V−1s−1 in both samples The high mobility of bulk electrons in the RIE converted n-layer indicates that a diffusion process rather than damage induced conversion is responsible for the p-to-n conversion deep in the bulk On the other hand, these results indicate that the surface electron mobility is affected by RIE induced damage in a very thin layer at the HgCdTe surface
37 citations
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TL;DR: In this paper, the measurement error of the resistivity due to contact displacement was determined on samples of six different shapes: circle, square, two circular cloverleafs, and two square clover leaf shapes.
Abstract: Van der Pauw resistivity measurements were performed on samples of six different shapes: circle, square, two circular cloverleafs, and two square cloverleafs, and the measurement error of the resistivity due to contact displacement was determined. Earlier predictions for this error were verified for the circle and square, and two circular cloverleafs, although significant higher‐order corrections were found in all cases except the square. The three square shapes gave contact placement errors typically 10–100 times smaller than the errors in the corresponding circular shapes. All cloverleafs gave smaller errors than the corresponding nonclovered shapes, although this difference disappeared in the limit of large contact displacement.
37 citations
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TL;DR: In this article, thermal evaporation technique was employed to deposit pristine and iodine doped polyaniline (PANI) thin films on glass substrates, which were characterized by FTIR and UV-VIS spectroscopy.
37 citations
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TL;DR: Cadmium telluride (CdTe) thin films were prepared by the closed-space sublimation (CSS) technique, using CdTe powder as evaporant onto substrates of water-white glass as mentioned in this paper.
37 citations
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TL;DR: In this article, the preparation and characterisation of spectrally selective reflector surfaces of pyrolytically deposited fluorine-doped tin oxide (SnOx:F) on aluminium is reported.
37 citations