Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this article, the crystalline, optical and electrical properties of N-doped ZnO thin films were measured using X-ray diffraction, photoluminescence and Hall effect apparatus, respectively.
35 citations
TL;DR: In this paper, the results on N and Al implantations into undoped high-resistance and vanadium doped semi-insulating bulk 6H-SiC are reported for the first time.
Abstract: In this article, the results on N and Al implantations into undoped high-resistance and vanadium doped semi-insulating bulk 6H-SiC are reported for the first time. The N implants were performed at 700 °C and the Al implants at 800 °C to create n- and p-type layers, respectively. For comparison, implants were performed into epitaxial layers at the above temperatures and, for N, also at room temperature. The implanted/annealed material was characterized by van der Pauw Hall, secondary ion mass spectrometry, and Rutherford backscattering (RBS) measurements. After annealing, the room temperature N implantation gave similar electrical and RBS results as the 700 °C implantation for a total implant dose of 8×1014 cm−2 which corresponds to a volume concentration of 2×1019 cm−3. The Al implant redistributed in the bulk crystals during annealing, resulting in a shoulder formation at the tail of the implant profile. Lower implant activation was obtained in V-doped material compared to the undoped bulk and epitaxial layers, but the results were promising enough to use implantation technology for making planar high frequency devices in the bulk V-doped substrates, especially as the quality of the substrates continue to improve.
35 citations
TL;DR: In this paper, the authors describe the use of THM in the growth of CuInS 2 single crystals, and demonstrate the feasibility of growing large single crystals of certain I-III-VI 2 compounds.
35 citations
TL;DR: In this article, the influence of source Ga-In-As melt baking temperatures on the epitaxial layer purity was investigated and the results of a photoluminescence study and van der Pauw measurements showed that acceptor impurities as well as donor impurities can be excluded from the source solution by a suitable heat treatment.
Abstract: Liquid phase epitaxy (LPE) and the properties of high purity GaInAs layers on (100)InP substrates are reported. Low carrier concentration (3.8–5.4×1014 cm-3) and high electron mobility (47000–51000 cm2/V.s at 77 K) were obtained reproducibly. The influence of source Ga-In-As melt baking temperatures on the epitaxial layer purity was investigated. The results of a photoluminescence study and van der Pauw measurements show that acceptor impurities as well as donor impurities can be excluded from the source solution by a suitable heat treatment.
35 citations
TL;DR: In this paper, the authors examined the advantages and drawbacks of different growth methods for GaSe single crystals obtained from vapour phase by using the following growth methods: (1) iodine transport; (2) closed tube sublimation; (3) sublimations under a vapour pressure of one of the components; (4) open tube sub-limation.
35 citations