Van der Pauw method

About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.

Metal oxide semiconductor 3D printing: preparation of copper(II) oxide by fused deposition modelling for multi-functional semiconducting applications

Abstract: A CuO semiconductor was successfully prepared by fused deposition modeling (FDM) and sintering technique. A 1.75 mm high-loading Cu composite was extruded and printed into a desired size and shape. The sample was sintered and calcined to transform Cu powder to CuO semiconductor. The 3-dimensional (3D) printed CuO had a scaffold structure with a half density of bulk CuO. It had a mechanical characteristic like a scaffold ceramic although prepared by FDM machine. van der Pauw measurement and UV-visible absorption spectroscopy were used to determine the electrical and optical properties of the 3D printed CuO respectively. The 3D printed CuO was used as an example of a 3D semiconductor which has a response to light, pressure, and temperature. This technique has a potential to be applied in any FDM machine which might allow anyone to print semiconductor or other related materials.

Transport properties of fullerene‐like WS2 nanoparticles

Abstract: Electrical resistivity and Hall effect measurements of pellets compacted from fullerene-like WS2 nanoparticles (IF -WS2) and bulk 2H-WS2 powder were carried out using the van der Pauw method over a wide temperature range. In addition IF -WS2 pellets were annealed at elevated temperatures under vacuum in a specially designed system. Arrhenius plots for the conductivities of the WS2 samples (2H, IF and IF +annealing) exhibit marked uprise of ∂ ln (sT–1)/∂T–1 with temperature. The resistivity of the non-annealed IF -WS2 pellets is higher by 2–8 orders of magnitude than that of 2H-WS2 pellets, whereas the resistivity of the annealed IF pellets is higher than that of the non-annealed ones. Hall Effect measurements at 300 K show p-type conductivity and similar carrier concentration for both types of materials. The carrier mobility of 2H-WS2 platelets is found to be in the range of the reported values. However, IF -WS2 pellets have shown an unusually low mobility for a semiconducting material. The experimental data was found to be in a good agreement with a model used for analyzing the conductivity of polycrystalline semiconductors, which takes into consideration fluctuations of the barrier heights among the different nanoparticles as well as within a single nanoparticle boundary. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

Synthesis and electrical characterization of boron‐doped thin diamond films

Abstract: Patterned semiconducting polycrystalline diamond films have been synthesized by hot‐filament CVD using in situ doping by pure boron powder. P‐type conduction was confirmed by both Hall and Seebeck effects. The quality of deposited films, as determined by SEM and Raman spectroscopy, was unaffected by the doping. The resistivity and Hall mobility measured by the Van der Pauw method were in the range of 20–100 Ω cm and 2–32 cm2 V−1 s−1, respectively. The dopant activation energies, as computed from the resistivity versus temperature curves (up to 300 °C), were in the range of 0.38–0.30 eV corresponding to Hall concentration in the range of 9×1015–2×1017 cm−3 and boron concentration in the range of 1017–1021 cm−3. The estimated impurity concentration is consistent with SIMS results.