Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this article, a new electrically conducting nanosized Ag-PANI-silica complex was synthesized by using γ-irradiation at room temperature and not by using polyvinylpyrrolidone (PVP) as a colloidal stabilizer.
28 citations
TL;DR: In this paper, the indium nitride (InN) thin films were prepared on ZnO/α-Al 2 O 3 by RF reactive magnetron sputtering and studied their optical and electrical properties using such analytical techniques as X-ray diffraction (XRD), van der Pauw technique, atomic force microscopy (AFM) and double-beam spectroscopy.
28 citations
TL;DR: In this paper, a closed form expression for the sheet resistance was given for devices with fourfold rotational symmetry for contacts of arbitrary size, and link it to the equivalent circuit diagram of the device, and add another expression that determines the Hall mobility with 0.02% accuracy.
Abstract: Sheet resistance and Hall mobility are commonly measured by Van der Pauw’s method. Closed form expressions are known for four point-sized contacts. Recently, for devices with fourfold rotational symmetry a closed form expression for the sheet resistance was given for contacts of arbitrary size. In this paper we discuss its accuracy, link it to the equivalent circuit diagram of the device, and add another expression that determines the Hall mobility with 0.02% accuracy.
28 citations
TL;DR: In this article, the electrical and structural properties of BGaN thin films, with boron composition up to 2%, have been investigated by the van der Pauw/Hall Effect technique, using annealed indium ohmic contacts.
Abstract: In this report, the electrical and structural properties of BGaN thin films, with boron composition up to 2%, have been investigated. The resistivity, Hall mobility and carrier concentration were measured by the van der Pauw/Hall Effect technique, using annealed indium ohmic contacts. The current-voltage measurements between two planar gold and titanium/aluminum electrodes were performed. To analyze the structural properties, the polarized Raman spectra were measured with a micro-Raman spectrometer. The resistivity displays a strong increase with respect to the boron composition in BGaN alloy, directly related to the decrease of the n-type carrier concentration, while the mobility increases with boron content, well correlated to the structural measurements showing a good crystalline quality of the BGaN layers. This boron-controlled resistivity is very promising for using the BGaN based materials in microelectronic and optoelectronic devices. (© 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
28 citations
TL;DR: In this article, a tritagonal zinc phosphide (α-Zn3P2) was grown pseudomorphically, by compound-source molecular-beam epitaxy on GaAs(001), and the films grew coherently strained, with epitaxial relationships of Zn_(3)P_(2)(004)
28 citations