Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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TL;DR: In this article, the electrical characterization of low resistance Al-Ti 72/28 wt% ohmic contacts to a p-type ion implanted 6H-SiC layer was dealt with.
Abstract: This paper deals with the electrical characterization of low resistance Al–Ti 72/28 wt% ohmic contacts to a p-type ion implanted 6H-SiC layer. Transmission line model (TLM) structures were realized on the top of MESA islands defined in this ion implanted layer. A metal scheme composed of Al-1%Si(350 nm)/Ti(80 nm) was deposited by sputtering, photolithography defined and annealed at 1000 °C in Ar for 2 min. TLM structures were measured as a function of the temperature in the range 25–290 °C. The TLM data were mainly analysed by a two-dimensional finite difference simulation tool that takes into account the current crowding effect at the contact periphery. Extracted contact resistivity values fall in the low range of data from the literature. The sheet resistance values computed from the TLM data agreed with those measured using Van der Pauw devices realized next to the TLM structures.
25 citations
TL;DR: In this article, an apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300k has been built, which allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method.
Abstract: An apparatus for measuring electrical resistivity and Hall coefficient on both thin films and bulk material over a temperature range of 300K to 1300K has been built. A unique alumina fixture, with four molybdenum probes, allows arbitrarily shaped samples, up to 2.5 cm diameter, to be measured using van der Pauw's method. The system is fully automated and is constructed with commercially available components. Measurements of the electrical properties of doped and undoped Si-Ge thin films, grown by liquid phase epitaxy reported here, are to illustrate the capabilities of the apparatus.
25 citations
TL;DR: The incorporation of 75As into substitutional lattice sites in silicon in excess of 1021 cm−3 was reported by both a scanned cw e−beam and a scanned Cw laser operating with dwell times in the range of milliseconds as mentioned in this paper.
Abstract: The incorporation of 75As into substitutional lattice sites in silicon in excess of 1021 cm−3 is reported This has been accomplished by both a scanned cw e‐beam and a scanned cw laser operating with dwell times in the range of milliseconds Both electron concentration (using differential van der Pauw) and atom location measurements (using MeV ion channeling) are reported Standard thermal processing indicates that these layers are metastable
25 citations
TL;DR: In this article, an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system was used to extract epitaxial layers of Ga 1− x In x As, Al 1 − x In X As, and InP.
25 citations
TL;DR: In this paper, the authors measured the electrical resistivities of Fe-10wt%Ni and Fe-1.8wt%Si alloys up to ∼142 GPa and ∼3400 K using four-probe van der Pauw method in laser-heated diamond anvil cell experiments.
25 citations