Topic
Van der Pauw method
About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.
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Patent•
24 Apr 1997
TL;DR: In this paper, the authors proposed a method for measuring the sheet resistance of the exposed (by the contact etch) silicide layer, thus allowing electrical measurements to the integrity as well as the remaining silicide thickness.
Abstract: For the contact opening in advanced IC processing, it becomes critical to monitor the degree of overetching of the thin silicide layer and also to obtain the etching rate of the silicide layer. A method is disclosed which will allow the electrical measurements of the sheet resistance of the exposed (by the contact etch) silicide layer, thus allowing electrical measurements to the integrity as well as the thickness of the remaining silicide layer. A main feature of the disclosed test method is a modification of the conventional van der Pauw test structure, or of the cross-bridge structure (which will allow electrical measurement of the line width, in addition to the sheet resistance information). Contrary to the conventional van der Pauw structure or cross-bridge structure where the contact opening pattern is designed to expose only the specific areas needed for allowing electrical connection to the four measurement pads, the contact opening mask is designed to expose some or all of the van der Pauw or cross-bridge structure, thus allowing the electrical measurement of the degree of silicide overetching during contact opening. The disclosed test method and corresponding structure can be applied as an on-wafer process monitor tool following the complete normal process flow, thus serving as a convenient on-wafer monitor.
23 citations
TL;DR: Inversion layer transport in p-type InAs at 77 K using Van der Pauw samples has been investigated with anodic oxides and sputtered SiO2 as the gate insulators as discussed by the authors.
Abstract: Inversion layer transport in p‐type InAs at 77 K using Van der Pauw samples has been investigated with anodic oxides and sputtered SiO2 as the gate insulators. It has been found that there is a correlation between the surface transport measurements, the fixed charge in the oxide, and possibly the insulating properties of the oxide. An attempt is made to develop a model to interrelate these measurements. It is found that fixed oxide charge appears to be the dominant mechanism in limiting the mobility at low surface carrier concentrations, while at higher concentrations surface roughness is the dominant mechanism.
23 citations
TL;DR: In this paper, a co-implantation of As with Si was used to study the influence of local stoichiometry and substrate morphology on the electrical activation of Si in semi-insulating GaAS.
23 citations
TL;DR: In this article, Van der Pauw et al. demonstrated a technique for the measurement of the electron velocity versus electric field on as-grown and H-intercalated graphene.
Abstract: A technique for the measurement of the electron velocity versus electric field is demonstrated on as-grown and H-intercalated graphene. Van der Pauw, coplanar microbridge, and coplanar TLM structures are fabricated in order to assess the carrier mobility, carrier concentration, sheet resistance, and contact resistance of both epi-materials. These measurements are then combined with dynamic IV measurements to extract a velocity-field characteristic. The saturated electron velocity measurements indicate a value of 2.33 x 10(7)cm/s for the as-grown material and 1: 36 x 10(7)cm/s for the H-intercalated material at 300 K. Measurements are taken as a function of temperature from 100K to 325K in order to estimate the optical phonon energy E-so of 4H-SiC by assuming an impurity scattering model. The extracted values of E-so are 97 meV for the as-grown sample and 115 meV for the H-intercalated sample. The H-intercalated result correlates to the anticipated value of 116 meV for 4H-SiC, while the as-grown value is significantly below the expected value. Therefore, we hypothesize that the transport properties of epitaxial graphene on SiC are influenced both by intercalation and by remote phonon scattering with the SiC substrate.
23 citations
TL;DR: In this article, bismuth thin films were grown by pulsed-laser deposition on glass substrates with the substrate temperature from −40°C to 200°C, and the structure of the films was characterized by X-ray diffraction.
23 citations