Van der Pauw method

About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.

The measurement of electrical activity and Hall mobility of boron and phosphorus ion-implanted layers in silicon†

Abstract: This paper describes an investigation into the electrical behaviour of shallow implantations of boron and phosphorus in silicon. The clover-leaf Van der Pauw patterns wore denned by planar masking techniques, and were ion implanted to produce a ‘ tailored ’ impurity profile of approximately uniform concentration with depth. It was found that phosphorus implantations became fully electrically active after annealing at a temperature between 620° c and 750° c, whereas the boron implantations required an anneal in excess of 900° c. A subsidiary activity peak, whose magnitude increased with the ion dose, was observed for the boron implantations after annealing at a temperature around 520° c.

Magnetoconductive correction factors for an isotropic Hall plate with point sources

Abstract: Resistivity and Hall measurements are usually made by constructing Hall-bars or by using the van der Pauw method. In both cases peripheral contacts are always used. In this paper we formulate a non-peripheral point contact method, which may be used to characterize starting materials and to facilitate measurements on diffused or epitaxially grown layers. An experimental method using a square array of point contacts is outlined for the simultaneous determination of the resistivity ρ ( B ) and the Hall coefficient R H ( B ) in an isotropic Hall plate. Measurements are described for both circular samples and large samples approximating an infinite plate with a circular hole drilled in the centre. For the square array of points placed symmetrically we derive the resistivity and Hall correction factors C ρ and C H , which relate the non-peripheral potential to the symmetrical peripheral potential. The working equations are ρ ( B ) = ΔV ρ πt / IC ρ ln 2 and R H ( B ) = ± ΔV H t / IBC H . Flow patterns have been constructed to show the distortion of potential and current stream lines due to the magnetic field and the geometrical configuration. It is shown that the magnetic field does not disturb current stream lines for peripheral contacts or the equipotential pattern of an infinite plate. Experiments carried out on homogeneous semiconductor samples verify the Hall and resistivity correction factors.

An apparatus for simultaneous measurement of electrical conductivity and thermopower of thin films in the temperature range of 300-750 K.

Abstract: An automated apparatus capable of measuring the electrical conductivity and thermopower of thin films over a temperature range of 300-750 K is reported. A standard dc resistance measurement in van der Pauw geometry was used to evaluate the electrical conductivity, and the thermopower was measured using the differential method. The design of the instrument, the methods used for calibration, and the measurement procedure are described in detail. Given the lack of a standard National Institute of Standards and Technology (Gaithersburg, Md.) sample for high temperature thermopower calibration, the disclosed calibration procedure shall be useful for calibration of new instruments.