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Van der Pauw method

About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.


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TL;DR: In this article, the electrical properties of n-conducting BaTiO3 ceramics co-doped by La and Mn were determined by impedance spectroscopy and dc four-point van der Pauw measurements.
Abstract: The electrical properties of positive temperature coefficient (PTC) ceramics are expected to strongly correlate with the potential barrier height at grain boundaries, which in turn may be influenced by the grain boundary structure and chemistry. In this study, n-conducting BaTiO3 ceramics co-doped by La and Mn were prepared, and the electrical properties were determined by impedance spectroscopy and dc four-point van der Pauw measurements. Detailed analysis of the grain boundary structure was performed by electron microscopy techniques across different length scales. The study revealed that the randomly oriented polycrystalline microstructure was dominated by large angle grain boundaries, which in the present case were dry although a secondary crystalline and glass phase formed at triple junctions. The relationship between the observed grain boundary atomic structures and electrical properties is briefly discussed.

20 citations

Journal ArticleDOI
TL;DR: In this article, an ohmic contact metallization with a specific contact resistivity of 2 × 10 −5 Ω-cm 2 on heavily doped diamond films was developed for active electronic devices.

20 citations

Journal ArticleDOI
TL;DR: In this article, Mg ions were implanted in Cr•doped semi-insulating GaAs at 120 keV to doses of 3×1012 to 1×1015/cm2 at room temperature.
Abstract: Mg ions were implanted in Cr‐doped semi‐insulating GaAs at 120 keV to doses of 3×1012 to 1×1015/cm2 at room temperature. Surface‐carrier concentrations and mobilities have been measured at various postimplantation anneal temperatures using the van der Pauw Hall‐effect/sheet‐resistivity technique. Detailed profiles of depth as a function of ion dose and anneal temperature are presented. Also, the results of a study of the integrated intensity of Mg emission at various annealing temperatures and of depth profiles of the relative emission intensity of the ions obtained by the photoluminescence method are compared with results obtained from electrical measurements. In addition, compensation‐level analysis and a comparison of theoretical diffusion profiles with depth‐profile data have been made. p‐type layers have been produced for all except the lowest dose of 3×1012/cm2 after capping only (no postimplantation annealing) with pyrolytic Si3N4 encapsulants. Subsequent annealing up to 600 °C does not alter the e...

20 citations

Journal ArticleDOI
TL;DR: In this paper, the van der Pauw method was used to study the magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film with a superconducting quantum interference device magnetometer.
Abstract: Magnetic properties and temperature dependence of electrical transport properties of rare-earth-metal Dy-doped GaN thin film are experimentally studied with a superconducting quantum interference device magnetometer and van der Pauw method. It was found that this thin nitride film has both semiconductor properties and ferromagnetism from 10 K to room temperature. The dopant-band (conducting band due to doping) electron conduction dominates the transport properties of this film at low temperatures. These results indicate that Dy-doped GaN is an n-type ferromagnetic semiconductor at room temperature.

20 citations

Journal ArticleDOI
TL;DR: In this article, a microwave-annealed 6H-SiC was used to anneal N, P, and Al ion-implanted 6HSiC, achieving a temperature range of 1400-1700°C for 2-10 min, and the characteristics of the microwave annealed material were similar to those of conventional furnace anneals despite the difference in cycle time.
Abstract: Rapid thermal processing utilizing microwave energy has been used to anneal N, P, and Al ion-implanted 6H-SiC. The microwaves raise the temperature of the sample at a rate of 200°C/min vs 10°C/min for conventional ceramic furnace annealing. Samples were annealed in the temperature range of 1400-1700°C for 2-10 min. The implanted/annealed samples were characterized using van der Pauw Hall, Rutherford backscattering, and secondary ion mass spectrometry. For a given annealing temperature, the characteristics of the microwave-annealed material are similar to those of conventional furnace anneals despite the difference in cycle time.

20 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202328
202241
202128
202030
201960
201867