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Van der Pauw method

About: Van der Pauw method is a research topic. Over the lifetime, 1682 publications have been published within this topic receiving 25364 citations.


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Journal ArticleDOI
TL;DR: In this article, the influence of argon working pressure, substrate temperature, low power plasma irradiation and partial pressure of hydrogen in the RF-magnetron sputtering of indium tin oxide (ITO) thin films on glass substrates was studied.

18 citations

Journal ArticleDOI
TL;DR: In this article, three different coating procedures have been used to investigate the effect on the structure, morphology and the electrical properties of tranparent conducting coatings, and it is shown that the individual layer thickness in multilayer coatings influences dramatically the mentioned properties.
Abstract: Tranparent conducting coatings have been prepared by sol gel methods either by a conventional sol-gel process (Antimony doped Tin Oxide—ATO, Aluminium doped Zinc Oxide—AZO) or a new wet chemical process using fully dispersed crystalline nanoparticles (ATO, Indium Tin Oxide—ITO). The dip coating technique has been used as deposition technique with single coating thickness varying from a few nanometer to ca. 400 nm. The layers have been fired in a furnace. Structural properties have been determined by x-ray diffraction and TEM analysis and the electrical properties by the van der Pauw/Hall measurement. Three different coating procedures have been used to investigate the effect on the structure, morphology and the electrical properties of the coatings. It is shown that the individual layer thickness in multilayer coatings influences dramatically the mentioned properties. Very thin individual layers favour a heterogeneous nucleation with dense columnar growth of the crystallites leading to low electrical resistivity (ρ ≈ 10−3Ω cm), while thick individual layers result in a porous morphology made of small crystallites leading to resistivities in the 10−2Ω cm range.

18 citations

Journal ArticleDOI
TL;DR: In this article, a new method of contactless electric conductivity measurement is developed, essentially based on the association of the coupled electric field forward model, with a simple and efficient research algorithm.
Abstract: In this paper, a new method of contactless electric conductivity measurement is developed. This method is essentially based on the association of the coupled electric field forward model, which we have recently developed, with a simple and efficient research algorithm. The proposed method is very fast because 1.3 s are sufficient to calculate electric conductivity, in a CPU of 2 GHz and RAM of 3 GB, for a starting research interval of 1.72–17.2 %IACS and tolerance of 1.72 × 10− 5 %IACS. The study of the calculation time according to mesh density and starting interval width has showed that an optimal choice has to be made in order to improve the rapidity while preserving its precision. Considering its rapidity and its simplicity of implementation, this method is more adapted, in comparison to direct current techniques using Van der Pauw geometry, for automated applications.

18 citations

Journal ArticleDOI
TL;DR: A new quaternary sulfide, BaLa 2 MnS 5, was prepared by the reaction of CS 2 with a mixture of BaCO 3, La 2 O 3, and MnO 2 at 1323 K.

18 citations

Journal ArticleDOI
TL;DR: In this paper, Sn doping In 2 O 3 (ITO) thin films with a thickness of 200nm were deposited on glass substrates by electron beam evaporation (EBE) method at different substrate temperatures.
Abstract: In this work, Sn doping In 2 O 3 (ITO) thin films with a thickness of 200 nm were deposited on glass substrates by electron beam evaporation (EBE) method at different substrate temperatures. The crystal structure of these films was studied by X-ray diffraction technique. The sheet resistance was measured by a four-point probe. Van der Pauw method was used to measure carrier density and mobility of ITO films. The optical transmittance spectra were recorded in the wavelength region of 300–800 nm. Scanning electron microscope (SEM) has been used for the surface morphology analysis. The prepared ITO films exhibited body-centered cubic (BCC) structure with preferred orientation of growth along the (2 2 2) crystalline plane. The grain size of the films increases by rising the substrate temperature. Transparency of the films, over the visible light region, is increased with increasing the substrate temperature. It is found that the electrical properties of ITO films are significantly affected by substrate temperature. The electrical resistivity decreases with increasing substrate temperature, whereas the carrier density and mobility are enhanced with an increase in substrate temperature. The evaluated values of energy band gap E g for ITO films were increase from 3.84 eV to 3.91 eV with increasing the substrate temperatures from 200 °C to 500 °C. The SEM micrographs of the films revealed a homogeneous growth without perceptible cracks with particles which are well covered on the substrate.

18 citations


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Performance
Metrics
No. of papers in the topic in previous years
YearPapers
202328
202241
202128
202030
201960
201867